DE69111203D1 - LDD Metalloxyd-Halbleiter-Feldeffekttransistor und Verfahren zur Herstellung. - Google Patents

LDD Metalloxyd-Halbleiter-Feldeffekttransistor und Verfahren zur Herstellung.

Info

Publication number
DE69111203D1
DE69111203D1 DE69111203T DE69111203T DE69111203D1 DE 69111203 D1 DE69111203 D1 DE 69111203D1 DE 69111203 T DE69111203 T DE 69111203T DE 69111203 T DE69111203 T DE 69111203T DE 69111203 D1 DE69111203 D1 DE 69111203D1
Authority
DE
Germany
Prior art keywords
ldd
manufacturing
metal oxide
oxide semiconductor
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69111203T
Other languages
English (en)
Other versions
DE69111203T2 (de
Inventor
Kazuhiro Okabe
Isami Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69111203D1 publication Critical patent/DE69111203D1/de
Publication of DE69111203T2 publication Critical patent/DE69111203T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69111203T 1990-11-30 1991-12-02 LDD Metalloxyd-Halbleiter-Feldeffekttransistor und Verfahren zur Herstellung. Expired - Fee Related DE69111203T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2339394A JPH04206933A (ja) 1990-11-30 1990-11-30 半導体装置

Publications (2)

Publication Number Publication Date
DE69111203D1 true DE69111203D1 (de) 1995-08-17
DE69111203T2 DE69111203T2 (de) 1996-04-04

Family

ID=18327060

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69111203T Expired - Fee Related DE69111203T2 (de) 1990-11-30 1991-12-02 LDD Metalloxyd-Halbleiter-Feldeffekttransistor und Verfahren zur Herstellung.

Country Status (4)

Country Link
US (1) US5292674A (de)
EP (1) EP0489559B1 (de)
JP (1) JPH04206933A (de)
DE (1) DE69111203T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376566A (en) * 1993-11-12 1994-12-27 Micron Semiconductor, Inc. N-channel field effect transistor having an oblique arsenic implant for lowered series resistance
US5439835A (en) * 1993-11-12 1995-08-08 Micron Semiconductor, Inc. Process for DRAM incorporating a high-energy, oblique P-type implant for both field isolation and punchthrough
US5614432A (en) * 1994-04-23 1997-03-25 Nec Corporation Method for manufacturing LDD type MIS device
US5478763A (en) * 1995-01-19 1995-12-26 United Microelectronics Corporation High performance field effect transistor and method of manufacture thereof
US5935867A (en) * 1995-06-07 1999-08-10 Advanced Micro Devices, Inc. Shallow drain extension formation by angled implantation
US6180470B1 (en) * 1996-12-19 2001-01-30 Lsi Logic Corporation FETs having lightly doped drain regions that are shaped with counter and noncounter dorant elements
EP0966762A1 (de) * 1997-01-21 1999-12-29 Advanced Micro Devices, Inc. HYBRIDER As/P-nLDD-ÜBERGANG UND MITTLERE Vdd-FUNKTIONSWEISE FÜR HOCHGESCHWINDIGKEITSMIKROPROZESSOREN

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136376A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd 半導体装置の製造方法
EP0187016B1 (de) * 1984-12-27 1991-02-20 Kabushiki Kaisha Toshiba MISFET mit niedrigdotiertem Drain und Verfahren zu seiner Herstellung
JPS61216364A (ja) * 1985-03-20 1986-09-26 Fujitsu Ltd 半導体装置
JPS62113474A (ja) * 1985-11-13 1987-05-25 Toshiba Corp 半導体集積回路の製造方法
JPH0789587B2 (ja) * 1985-12-27 1995-09-27 株式会社東芝 絶縁ゲート型電界効果トランジスタおよびその製造方法
US4771012A (en) * 1986-06-13 1988-09-13 Matsushita Electric Industrial Co., Ltd. Method of making symmetrically controlled implanted regions using rotational angle of the substrate
US4746624A (en) * 1986-10-31 1988-05-24 Hewlett-Packard Company Method for making an LDD MOSFET with a shifted buried layer and a blocking region
US4835740A (en) * 1986-12-26 1989-05-30 Kabushiki Kaisha Toshiba Floating gate type semiconductor memory device
US5061975A (en) * 1988-02-19 1991-10-29 Mitsubishi Denki Kabushiki Kaisha MOS type field effect transistor having LDD structure
JP2562688B2 (ja) * 1989-05-12 1996-12-11 三洋電機株式会社 半導体装置の製造方法
US5158903A (en) * 1989-11-01 1992-10-27 Matsushita Electric Industrial Co., Ltd. Method for producing a field-effect type semiconductor device
US5023190A (en) * 1990-08-03 1991-06-11 Micron Technology, Inc. CMOS processes
US5091763A (en) * 1990-12-19 1992-02-25 Intel Corporation Self-aligned overlap MOSFET and method of fabrication
US5102815A (en) * 1990-12-19 1992-04-07 Intel Corporation Method of fabricating a composite inverse T-gate metal oxide semiconductor device
US5162884A (en) * 1991-03-27 1992-11-10 Sgs-Thomson Microelectronics, Inc. Insulated gate field-effect transistor with gate-drain overlap and method of making the same

Also Published As

Publication number Publication date
JPH04206933A (ja) 1992-07-28
DE69111203T2 (de) 1996-04-04
EP0489559B1 (de) 1995-07-12
US5292674A (en) 1994-03-08
EP0489559A1 (de) 1992-06-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee