DE69105941D1 - Zerstäubungsvorrichtung. - Google Patents

Zerstäubungsvorrichtung.

Info

Publication number
DE69105941D1
DE69105941D1 DE69105941T DE69105941T DE69105941D1 DE 69105941 D1 DE69105941 D1 DE 69105941D1 DE 69105941 T DE69105941 T DE 69105941T DE 69105941 T DE69105941 T DE 69105941T DE 69105941 D1 DE69105941 D1 DE 69105941D1
Authority
DE
Germany
Prior art keywords
atomizing device
atomizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69105941T
Other languages
English (en)
Other versions
DE69105941T2 (de
Inventor
Kyoji Kinokiri
Jiro Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Sony Corp
Original Assignee
Shibaura Engineering Works Co Ltd
Shibaura Mechatronics Corp
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2547391A external-priority patent/JPH0639691B2/ja
Application filed by Shibaura Engineering Works Co Ltd, Shibaura Mechatronics Corp, Sony Corp filed Critical Shibaura Engineering Works Co Ltd
Application granted granted Critical
Publication of DE69105941D1 publication Critical patent/DE69105941D1/de
Publication of DE69105941T2 publication Critical patent/DE69105941T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Optical Record Carriers (AREA)
DE69105941T 1991-01-25 1991-09-30 Zerstäubungsvorrichtung. Expired - Fee Related DE69105941T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2547391A JPH0639691B2 (ja) 1990-04-16 1991-01-25 連続スパッタリング装置

Publications (2)

Publication Number Publication Date
DE69105941D1 true DE69105941D1 (de) 1995-01-26
DE69105941T2 DE69105941T2 (de) 1995-05-04

Family

ID=12167011

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69105941T Expired - Fee Related DE69105941T2 (de) 1991-01-25 1991-09-30 Zerstäubungsvorrichtung.

Country Status (3)

Country Link
US (1) US5254236A (de)
EP (1) EP0496036B1 (de)
DE (1) DE69105941T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4313353C2 (de) * 1993-04-23 1997-08-28 Leybold Ag Vakuum-Beschichtungsanlage
JP3398452B2 (ja) * 1994-01-19 2003-04-21 株式会社ソニー・ディスクテクノロジー スパッタリング装置
US5419029A (en) * 1994-02-18 1995-05-30 Applied Materials, Inc. Temperature clamping method for anti-contamination and collimating devices for thin film processes
TW303480B (en) * 1996-01-24 1997-04-21 Applied Materials Inc Magnetically confined plasma reactor for processing a semiconductor wafer
DE29618882U1 (de) * 1996-10-30 1997-01-16 Balzers Prozeß-Systeme GmbH, 63450 Hanau Kathodenzerstäubungsanlage
FR2783001B1 (fr) * 1998-09-04 2000-11-24 Essilor Int Procede pour le traitement sous vide d'un quelconque substrat courbe, notamment un verre de lunettes, et cache propre a la mise en oeuvre d'un tel procede
DE10004824B4 (de) * 2000-02-04 2009-06-25 Oc Oerlikon Balzers Ag Verfahren zur Herstellung von Substraten, Magnetronquelle, Sputterbeschichtungskammer und Verwendung des Verfahrens
JP2005517809A (ja) * 2002-02-14 2005-06-16 トリコン テクノロジーズ リミテッド プラズマ処理装置
US9865440B1 (en) * 2010-11-29 2018-01-09 Seagate Technology Llc Sputtering shield
JP6026263B2 (ja) * 2012-12-20 2016-11-16 キヤノンアネルバ株式会社 プラズマｃｖｄ装置、真空処理装置
EP3091561B1 (de) * 2015-05-06 2019-09-04 safematic GmbH Sputtereinheit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4444643A (en) * 1982-09-03 1984-04-24 Gartek Systems, Inc. Planar magnetron sputtering device
US4508612A (en) * 1984-03-07 1985-04-02 International Business Machines Corporation Shield for improved magnetron sputter deposition into surface recesses
JPS6112035A (ja) * 1984-06-27 1986-01-20 Nippon Telegr & Teleph Corp <Ntt> 半導体製造装置
DE3735284A1 (de) * 1987-10-17 1989-04-27 Leybold Ag Vorrichtung nach dem karussell-prinzip zum beschichten von substraten
US4820371A (en) * 1987-12-15 1989-04-11 Texas Instruments Incorporated Apertured ring for exhausting plasma reactor gases
US4849087A (en) * 1988-02-11 1989-07-18 Southwall Technologies Apparatus for obtaining transverse uniformity during thin film deposition on extended substrate
DE3912297C2 (de) * 1989-04-14 1996-07-18 Leybold Ag Katodenzerstäubungsanlage

Also Published As

Publication number Publication date
EP0496036B1 (de) 1994-12-14
DE69105941T2 (de) 1995-05-04
EP0496036A1 (de) 1992-07-29
US5254236A (en) 1993-10-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee