DE69028644D1 - Integrierte Schaltung und Herstellungsverfahren - Google Patents

Integrierte Schaltung und Herstellungsverfahren

Info

Publication number
DE69028644D1
DE69028644D1 DE69028644T DE69028644T DE69028644D1 DE 69028644 D1 DE69028644 D1 DE 69028644D1 DE 69028644 T DE69028644 T DE 69028644T DE 69028644 T DE69028644 T DE 69028644T DE 69028644 D1 DE69028644 D1 DE 69028644D1
Authority
DE
Germany
Prior art keywords
integrated circuit
manufacturing process
manufacturing
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69028644T
Other languages
English (en)
Other versions
DE69028644T2 (de
Inventor
Burhan Bayraktaroglu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69028644D1 publication Critical patent/DE69028644D1/de
Publication of DE69028644T2 publication Critical patent/DE69028644T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
DE1990628644 1989-02-16 1990-01-17 Integrierte Schaltung und Herstellungsverfahren Expired - Fee Related DE69028644T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31210089A 1989-02-16 1989-02-16

Publications (2)

Publication Number Publication Date
DE69028644D1 true DE69028644D1 (de) 1996-10-31
DE69028644T2 DE69028644T2 (de) 1997-02-13

Family

ID=23209888

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990628644 Expired - Fee Related DE69028644T2 (de) 1989-02-16 1990-01-17 Integrierte Schaltung und Herstellungsverfahren

Country Status (3)

Country Link
EP (1) EP0383034B1 (de)
JP (1) JPH02298070A (de)
DE (1) DE69028644T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166083A (en) * 1991-03-28 1992-11-24 Texas Instruments Incorporated Method of integrating heterojunction bipolar transistors with heterojunction FETs and PIN diodes
JPH0945692A (ja) * 1995-07-27 1997-02-14 Sharp Corp 縦型構造トランジスタ及びその製造方法、並びに半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611388A (en) * 1983-04-14 1986-09-16 Allied Corporation Method of forming an indium phosphide-boron phosphide heterojunction bipolar transistor
US4712122A (en) * 1984-07-26 1987-12-08 Research Development Corp. Heterojunction gate ballistic JFET with channel thinner than Debye length
KR910006751B1 (ko) * 1987-01-27 1991-09-02 후지쓰 가부시끼가이샤 반도체 집적회로장치 및 그의 제조방법

Also Published As

Publication number Publication date
DE69028644T2 (de) 1997-02-13
EP0383034A1 (de) 1990-08-22
JPH02298070A (ja) 1990-12-10
EP0383034B1 (de) 1996-09-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee