DE69026213D1 - Schnelle Dämpfungsdiode - Google Patents

Schnelle Dämpfungsdiode

Info

Publication number
DE69026213D1
DE69026213D1 DE69026213T DE69026213T DE69026213D1 DE 69026213 D1 DE69026213 D1 DE 69026213D1 DE 69026213 T DE69026213 T DE 69026213T DE 69026213 T DE69026213 T DE 69026213T DE 69026213 D1 DE69026213 D1 DE 69026213D1
Authority
DE
Germany
Prior art keywords
damping diode
fast damping
fast
diode
damping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69026213T
Other languages
English (en)
Other versions
DE69026213T2 (de
Inventor
Samuel J Anderson
Daniel J Sullivan
William C Simpson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69026213D1 publication Critical patent/DE69026213D1/de
Application granted granted Critical
Publication of DE69026213T2 publication Critical patent/DE69026213T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
DE69026213T 1989-11-29 1990-11-27 Schnelle Dämpfungsdiode Expired - Fee Related DE69026213T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44361589A 1989-11-29 1989-11-29

Publications (2)

Publication Number Publication Date
DE69026213D1 true DE69026213D1 (de) 1996-05-02
DE69026213T2 DE69026213T2 (de) 1996-10-31

Family

ID=23761509

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69026213T Expired - Fee Related DE69026213T2 (de) 1989-11-29 1990-11-27 Schnelle Dämpfungsdiode

Country Status (4)

Country Link
EP (1) EP0431817B1 (de)
JP (1) JP2833205B2 (de)
KR (1) KR0149840B1 (de)
DE (1) DE69026213T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4267083B2 (ja) 1998-06-01 2009-05-27 三菱電機株式会社 ダイオード
AT503964B1 (de) 2007-01-23 2008-02-15 Siemens Ag Oesterreich Schaltungsanordnung zur begrenzung von spannungsüberhöhungen
FR3107988B1 (fr) * 2020-03-05 2023-11-10 St Microelectronics Tours Sas Formation d'un thyristor, triac ou diode de suppression de tensions transitoires
CN116169181B (zh) * 2022-09-30 2023-07-18 富芯微电子有限公司 一种低漏电低压tvs器件及其制造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115871A (ja) * 1981-12-28 1983-07-09 Toshiba Corp 高周波リミタダイオ−ド

Also Published As

Publication number Publication date
JP2833205B2 (ja) 1998-12-09
EP0431817B1 (de) 1996-03-27
KR910010752A (ko) 1991-06-29
EP0431817A1 (de) 1991-06-12
JPH03229471A (ja) 1991-10-11
DE69026213T2 (de) 1996-10-31
KR0149840B1 (ko) 1998-10-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee