DE69026132D1 - Halbleitergleichrichteranordnung mit bidirektionaler Kontrolle - Google Patents

Halbleitergleichrichteranordnung mit bidirektionaler Kontrolle

Info

Publication number
DE69026132D1
DE69026132D1 DE69026132T DE69026132T DE69026132D1 DE 69026132 D1 DE69026132 D1 DE 69026132D1 DE 69026132 T DE69026132 T DE 69026132T DE 69026132 T DE69026132 T DE 69026132T DE 69026132 D1 DE69026132 D1 DE 69026132D1
Authority
DE
Germany
Prior art keywords
bidirectional control
semiconductor rectifier
rectifier arrangement
arrangement
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69026132T
Other languages
English (en)
Other versions
DE69026132T2 (de
Inventor
Junichi Miwa
Kouichi Asakura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69026132D1 publication Critical patent/DE69026132D1/de
Application granted granted Critical
Publication of DE69026132T2 publication Critical patent/DE69026132T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE69026132T 1989-05-01 1990-04-30 Halbleitergleichrichteranordnung mit bidirektionaler Kontrolle Expired - Lifetime DE69026132T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1109050A JPH0680821B2 (ja) 1989-05-01 1989-05-01 高感度トライアック

Publications (2)

Publication Number Publication Date
DE69026132D1 true DE69026132D1 (de) 1996-05-02
DE69026132T2 DE69026132T2 (de) 1996-08-14

Family

ID=14500337

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69026132T Expired - Lifetime DE69026132T2 (de) 1989-05-01 1990-04-30 Halbleitergleichrichteranordnung mit bidirektionaler Kontrolle

Country Status (4)

Country Link
EP (2) EP0635889A1 (de)
JP (1) JPH0680821B2 (de)
KR (1) KR900019267A (de)
DE (1) DE69026132T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2818806B1 (fr) * 2000-12-21 2003-03-21 St Microelectronics Sa Commutateur electronique bidirectionnel bistable a commande par implusions
FR2819102B1 (fr) 2000-12-29 2003-04-04 St Microelectronics Sa Commutateur electronique bidirectionnel bistable a commande par impulsions
FR2849537B1 (fr) * 2002-12-27 2005-03-25 St Microelectronics Sa Commutateur bidirectionnel haute tension
FR2864343A1 (fr) * 2003-12-19 2005-06-24 St Microelectronics Sa Triac fonctionnant dans les quadrants q1 et q4

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5599773A (en) * 1979-01-25 1980-07-30 Nec Corp Silicon control rectifier device
CA1163020A (en) * 1980-05-23 1984-02-28 Victor A.K.. Temple High voltage semiconductor device having improvements to the dv/dt capability and plasma spreading
JPH0746647B2 (ja) * 1984-06-14 1995-05-17 日本電気株式会社 磁界発生装置
DE3881264T2 (de) * 1987-03-31 1993-11-25 Toshiba Kawasaki Kk Gate-steuerbare bilaterale Halbleiterschaltungsanordnung.
JPS63269574A (ja) * 1987-04-27 1988-11-07 Mitsubishi Electric Corp 半導体素子

Also Published As

Publication number Publication date
JPH0680821B2 (ja) 1994-10-12
EP0396104A2 (de) 1990-11-07
EP0396104A3 (de) 1991-07-03
KR900019267A (ko) 1990-12-24
JPH02291172A (ja) 1990-11-30
DE69026132T2 (de) 1996-08-14
EP0635889A1 (de) 1995-01-25
EP0396104B1 (de) 1996-03-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)