DE69023582D1 - Verfahren zur Herstellung eines Halbleiterelementes mittels Ionen-Implantation. - Google Patents

Verfahren zur Herstellung eines Halbleiterelementes mittels Ionen-Implantation.

Info

Publication number
DE69023582D1
DE69023582D1 DE69023582T DE69023582T DE69023582D1 DE 69023582 D1 DE69023582 D1 DE 69023582D1 DE 69023582 T DE69023582 T DE 69023582T DE 69023582 T DE69023582 T DE 69023582T DE 69023582 D1 DE69023582 D1 DE 69023582D1
Authority
DE
Germany
Prior art keywords
producing
semiconductor element
ion implantation
implantation
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69023582T
Other languages
English (en)
Other versions
DE69023582T2 (de
Inventor
Yoshikazu Usuki
Jun-Ichi Okano
Shun-Ichi Hiraki
Shigeo Yawata
Shigeru Moriyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69023582D1 publication Critical patent/DE69023582D1/de
Publication of DE69023582T2 publication Critical patent/DE69023582T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66098—Breakdown diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/015—Capping layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/174—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE69023582T 1989-09-11 1990-09-11 Verfahren zur Herstellung eines Halbleiterelementes mittels Ionen-Implantation. Expired - Fee Related DE69023582T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1235239A JPH0397224A (ja) 1989-09-11 1989-09-11 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69023582D1 true DE69023582D1 (de) 1995-12-21
DE69023582T2 DE69023582T2 (de) 1996-05-02

Family

ID=16983140

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69023582T Expired - Fee Related DE69023582T2 (de) 1989-09-11 1990-09-11 Verfahren zur Herstellung eines Halbleiterelementes mittels Ionen-Implantation.

Country Status (5)

Country Link
US (1) US5130261A (de)
EP (1) EP0417737B1 (de)
JP (1) JPH0397224A (de)
KR (1) KR940010157B1 (de)
DE (1) DE69023582T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59307362D1 (de) * 1992-03-13 1997-10-23 Siemens Ag Verfahren zum Herstellen eines Aluminium-Dotierungsprofils
JP3384506B2 (ja) * 1993-03-30 2003-03-10 ソニー株式会社 半導体基板の製造方法
US6652922B1 (en) * 1995-06-15 2003-11-25 Alliedsignal Inc. Electron-beam processed films for microelectronics structures
JP3450163B2 (ja) * 1997-09-12 2003-09-22 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
KR20010054711A (ko) * 1999-12-07 2001-07-02 강 석 봉 자동문 개폐장치
CN1309021C (zh) * 2003-12-25 2007-04-04 北京有色金属研究总院 一种消除硅单晶片器件制作区原生坑缺陷的方法
DE102004004555A1 (de) * 2004-01-29 2005-08-18 Siltronic Ag Verfahren zur Herstellung von hoch dotierten Halbleiterscheiben und versetzungsfreie, hoch dotierte Halbleiterscheiben
CN110534616B (zh) * 2019-08-29 2021-12-07 常州时创能源股份有限公司 晶硅电池分片的制备工艺

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345221A (en) * 1963-04-10 1967-10-03 Motorola Inc Method of making a semiconductor device having improved pn junction avalanche characteristics
US3510368A (en) * 1966-08-29 1970-05-05 Motorola Inc Method of making a semiconductor device
DE1959817A1 (de) * 1969-11-28 1971-06-03 Licentia Gmbh Zenerdiode
US3798081A (en) * 1972-02-14 1974-03-19 Ibm Method for diffusing as into silicon from a solid phase
US3808060A (en) * 1972-07-05 1974-04-30 Motorola Inc Method of doping semiconductor substrates
US4079402A (en) * 1973-07-09 1978-03-14 National Semiconductor Corporation Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface
US3909304A (en) * 1974-05-03 1975-09-30 Western Electric Co Method of doping a semiconductor body
US3978517A (en) * 1975-04-04 1976-08-31 Motorola, Inc. Titanium-silver-palladium metallization system and process therefor
JPS5427361A (en) * 1977-08-02 1979-03-01 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor integrated circuit
JPS54106180A (en) * 1978-02-08 1979-08-20 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor integrated circuit
JPS5516376A (en) * 1978-07-24 1980-02-05 Teijin Ltd Heating structure
US4218267A (en) * 1979-04-23 1980-08-19 Rockwell International Corporation Microelectronic fabrication method minimizing threshold voltage variation
US4266985A (en) * 1979-05-18 1981-05-12 Fujitsu Limited Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate
JPS5680126A (en) * 1979-12-05 1981-07-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Formation of monocrystalline semiconductor
US4349394A (en) * 1979-12-06 1982-09-14 Siemens Corporation Method of making a zener diode utilizing gas-phase epitaxial deposition
JPS5856409A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体装置の製造方法
JPS5984422A (ja) * 1982-11-04 1984-05-16 Pioneer Electronic Corp 半導体装置の製造方法
JPS6351646A (ja) * 1986-08-21 1988-03-04 Fuji Photo Film Co Ltd イントリンシツク・ゲツタリング法
US4775643A (en) * 1987-06-01 1988-10-04 Motorola Inc. Mesa zener diode and method of manufacture thereof

Also Published As

Publication number Publication date
EP0417737B1 (de) 1995-11-15
US5130261A (en) 1992-07-14
JPH0397224A (ja) 1991-04-23
KR940010157B1 (ko) 1994-10-22
EP0417737A1 (de) 1991-03-20
DE69023582T2 (de) 1996-05-02
KR910007082A (ko) 1991-04-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee