DE69021821D1 - Verfahren und Anlage zum Herstellen von Hartstoff. - Google Patents
Verfahren und Anlage zum Herstellen von Hartstoff.Info
- Publication number
- DE69021821D1 DE69021821D1 DE69021821T DE69021821T DE69021821D1 DE 69021821 D1 DE69021821 D1 DE 69021821D1 DE 69021821 T DE69021821 T DE 69021821T DE 69021821 T DE69021821 T DE 69021821T DE 69021821 D1 DE69021821 D1 DE 69021821D1
- Authority
- DE
- Germany
- Prior art keywords
- plant
- hard material
- producing hard
- producing
- hard
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Combustion & Propulsion (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24574989 | 1989-09-20 | ||
JP2231649A JPH03174397A (ja) | 1989-09-20 | 1990-08-31 | 硬質物質の合成方法およびその合成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69021821D1 true DE69021821D1 (de) | 1995-09-28 |
DE69021821T2 DE69021821T2 (de) | 1996-05-30 |
Family
ID=26530000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69021821T Expired - Fee Related DE69021821T2 (de) | 1989-09-20 | 1990-09-18 | Verfahren und Anlage zum Herstellen von Hartstoff. |
Country Status (3)
Country | Link |
---|---|
US (2) | US5242663A (de) |
EP (1) | EP0423498B1 (de) |
DE (1) | DE69021821T2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5470541A (en) * | 1993-12-28 | 1995-11-28 | E. I. Du Pont De Nemours And Company | Apparatus and process for the preparation of hydrogen cyanide |
US6132550A (en) * | 1995-08-11 | 2000-10-17 | Sumitomo Electric Industries, Ltd. | Apparatuses for desposition or etching |
US5976716A (en) * | 1996-04-04 | 1999-11-02 | Kennametal Inc. | Substrate with a superhard coating containing boron and nitrogen and method of making the same |
US5948541A (en) * | 1996-04-04 | 1999-09-07 | Kennametal Inc. | Boron and nitrogen containing coating and method for making |
US6015597A (en) * | 1997-11-26 | 2000-01-18 | 3M Innovative Properties Company | Method for coating diamond-like networks onto particles |
GB0126419D0 (en) * | 2001-11-03 | 2002-01-02 | Accentus Plc | Microwave plasma generator |
RU2215061C1 (ru) * | 2002-09-30 | 2003-10-27 | Институт прикладной физики РАН | Высокоскоростной способ осаждения алмазных пленок из газовой фазы в плазме свч-разряда и плазменный реактор для его реализации |
US7776408B2 (en) * | 2007-02-14 | 2010-08-17 | Rajneesh Bhandari | Method and apparatus for producing single crystalline diamonds |
US9545609B2 (en) | 2009-08-13 | 2017-01-17 | Tekgar, Llv | Pyrolysis oil made with a microwave-transparent reaction chamber for production of fuel from an organic-carbon-containing feedstock |
US8361282B2 (en) * | 2009-08-13 | 2013-01-29 | Tekgar, Llc | System and method using a microwave-transparent reaction chamber for production of fuel from a carbon-containing feedstock |
US8633648B2 (en) | 2011-06-28 | 2014-01-21 | Recarbon, Inc. | Gas conversion system |
US9763287B2 (en) * | 2011-11-30 | 2017-09-12 | Michael R. Knox | Single mode microwave device for producing exfoliated graphite |
US9540580B2 (en) | 2013-01-28 | 2017-01-10 | Tekgar, Llv | Char made with a microwave-transparent reaction chamber for production of fuel from an organic-carbon-containing feedstock |
CN109825821B (zh) * | 2019-03-19 | 2020-02-04 | 中南大学 | 一种金刚石/cbn复合涂层硬质合金刀具、制备方法及装置 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4233109A (en) * | 1976-01-16 | 1980-11-11 | Zaidan Hojin Handotai Kenkyu Shinkokai | Dry etching method |
JPS5933532B2 (ja) * | 1981-04-03 | 1984-08-16 | スタンレー電気株式会社 | 非晶質シリコンの形成方法 |
FR2512645B1 (fr) * | 1981-09-17 | 1985-06-21 | Caudry Produits Alimentaires | Procede de fabrication de produits alimentaires surgeles comprenant une superposition de couches de pates et de sauces et produits derives |
US4414085A (en) * | 1981-10-08 | 1983-11-08 | Wickersham Charles E | Method of depositing a high-emissivity layer |
JPS593098A (ja) * | 1982-06-24 | 1984-01-09 | Natl Inst For Res In Inorg Mater | ダイヤモンドの合成法 |
JPS5927754B2 (ja) * | 1981-12-17 | 1984-07-07 | 科学技術庁無機材質研究所長 | ダイヤモンドの合成法 |
US4434188A (en) * | 1981-12-17 | 1984-02-28 | National Institute For Researches In Inorganic Materials | Method for synthesizing diamond |
JPS5963732A (ja) * | 1982-10-04 | 1984-04-11 | Hitachi Ltd | 薄膜形成装置 |
US4663183A (en) * | 1984-09-10 | 1987-05-05 | Energy Conversion Devices, Inc. | Glow discharge method of applying a carbon coating onto a substrate |
JPS61174378A (ja) * | 1985-01-28 | 1986-08-06 | Toshiba Tungaloy Co Ltd | 硬質窒化ホウ素被覆材料の製造方法 |
US4711767A (en) * | 1985-02-05 | 1987-12-08 | Psi Star | Plasma reactor with voltage transformer |
US4600563A (en) * | 1985-02-05 | 1986-07-15 | Psi Star Incorporated | Plasma reactor with voltage transformer |
US4725345A (en) * | 1985-04-22 | 1988-02-16 | Kabushiki Kaisha Kenwood | Method for forming a hard carbon thin film on article and applications thereof |
JPS6227533A (ja) * | 1985-07-26 | 1987-02-05 | Japan Synthetic Rubber Co Ltd | 内部酸化型合金およびその成形物の製造方法 |
US4816286A (en) * | 1985-11-25 | 1989-03-28 | Showa Denko Kabushiki Kaisha | Process for synthesis of diamond by CVD |
US4673589A (en) * | 1986-02-18 | 1987-06-16 | Amoco Corporation | Photoconducting amorphous carbon |
JPS63107899A (ja) * | 1986-10-24 | 1988-05-12 | Semiconductor Energy Lab Co Ltd | 薄膜形成方法 |
EP0273741B1 (de) * | 1986-12-29 | 1991-10-23 | Sumitomo Metal Industries, Ltd. | Plasmagerät |
DE3705666A1 (de) * | 1987-02-21 | 1988-09-01 | Leybold Ag | Einrichtung zum herstellen eines plasmas und zur behandlung von substraten darin |
KR900008505B1 (ko) * | 1987-02-24 | 1990-11-24 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | 탄소 석출을 위한 마이크로파 강화 cvd 방법 |
JPS6461396A (en) * | 1987-09-01 | 1989-03-08 | Idemitsu Petrochemical Co | Synthesis of diamond and installation therefor |
US4935303A (en) * | 1987-10-15 | 1990-06-19 | Canon Kabushiki Kaisha | Novel diamond-like carbon film and process for the production thereof |
US4902535A (en) * | 1987-12-31 | 1990-02-20 | Air Products And Chemicals, Inc. | Method for depositing hard coatings on titanium or titanium alloys |
US4971667A (en) * | 1988-02-05 | 1990-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method and apparatus |
JPH0215174A (ja) * | 1988-07-01 | 1990-01-18 | Canon Inc | マイクロ波プラズマcvd装置 |
-
1990
- 1990-09-18 DE DE69021821T patent/DE69021821T2/de not_active Expired - Fee Related
- 1990-09-18 EP EP90117966A patent/EP0423498B1/de not_active Expired - Lifetime
- 1990-09-18 US US07/584,912 patent/US5242663A/en not_active Expired - Lifetime
-
1993
- 1993-06-17 US US08/079,105 patent/US5436036A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5436036A (en) | 1995-07-25 |
EP0423498B1 (de) | 1995-08-23 |
EP0423498A2 (de) | 1991-04-24 |
EP0423498A3 (en) | 1991-05-08 |
US5242663A (en) | 1993-09-07 |
DE69021821T2 (de) | 1996-05-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de | ||
8370 | Indication related to discontinuation of the patent is to be deleted | ||
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |