DE69019557T2 - Vorrichtung zur Kontrolle der Strahlquerschnittseigenschaften in einem Ionenimplantierungsgerät. - Google Patents

Vorrichtung zur Kontrolle der Strahlquerschnittseigenschaften in einem Ionenimplantierungsgerät.

Info

Publication number
DE69019557T2
DE69019557T2 DE69019557T DE69019557T DE69019557T2 DE 69019557 T2 DE69019557 T2 DE 69019557T2 DE 69019557 T DE69019557 T DE 69019557T DE 69019557 T DE69019557 T DE 69019557T DE 69019557 T2 DE69019557 T2 DE 69019557T2
Authority
DE
Germany
Prior art keywords
controlling
ion implantation
beam cross
sectional properties
implantation device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69019557T
Other languages
English (en)
Other versions
DE69019557D1 (de
Inventor
Jerald Paul Dykstra
Andrew Marlow Ray
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Eaton Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eaton Corp filed Critical Eaton Corp
Publication of DE69019557D1 publication Critical patent/DE69019557D1/de
Application granted granted Critical
Publication of DE69019557T2 publication Critical patent/DE69019557T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE69019557T 1989-02-28 1990-02-27 Vorrichtung zur Kontrolle der Strahlquerschnittseigenschaften in einem Ionenimplantierungsgerät. Expired - Fee Related DE69019557T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/317,225 US4943728A (en) 1989-02-28 1989-02-28 Beam pattern control system for an ion implanter

Publications (2)

Publication Number Publication Date
DE69019557D1 DE69019557D1 (de) 1995-06-29
DE69019557T2 true DE69019557T2 (de) 1996-01-18

Family

ID=23232685

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69019557T Expired - Fee Related DE69019557T2 (de) 1989-02-28 1990-02-27 Vorrichtung zur Kontrolle der Strahlquerschnittseigenschaften in einem Ionenimplantierungsgerät.

Country Status (5)

Country Link
US (1) US4943728A (de)
EP (1) EP0385708B1 (de)
JP (1) JP2779971B2 (de)
KR (1) KR950001499B1 (de)
DE (1) DE69019557T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940010932B1 (ko) * 1991-12-23 1994-11-19 금성일렉트론주식회사 Ccd영상소자 제조방법
US5306920A (en) * 1992-11-23 1994-04-26 Motorola, Inc. Ion implanter with beam resolving apparatus and method for implanting ions
US5554853A (en) * 1995-03-10 1996-09-10 Krytek Corporation Producing ion beams suitable for ion implantation and improved ion implantation apparatus and techniques
US6204132B1 (en) * 1998-05-06 2001-03-20 Texas Instruments Incorporated Method of forming a silicide layer using an angled pre-amorphization implant
US6331227B1 (en) 1999-12-14 2001-12-18 Epion Corporation Enhanced etching/smoothing of dielectric surfaces
US6765219B2 (en) * 2000-11-22 2004-07-20 Variah Semiconductor Equipment Associates, Inc. Hybrid scanning system and methods for ion implantation
JP5033314B2 (ja) * 2004-09-29 2012-09-26 株式会社日立ハイテクノロジーズ イオンビーム加工装置及び加工方法
US7078756B2 (en) * 2004-12-06 2006-07-18 International Business Machines Corporation Collarless trench DRAM device
US7785060B2 (en) * 2006-10-27 2010-08-31 Applied Materials, Inc. Multi-directional mechanical scanning in an ion implanter
US8097866B2 (en) * 2008-02-14 2012-01-17 Varian Semiconductor Equipment Associates, Inc. Apparatus for measuring beam characteristics and a method thereof
US7915597B2 (en) 2008-03-18 2011-03-29 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
US7977628B2 (en) * 2008-06-25 2011-07-12 Axcelis Technologies, Inc. System and method for reducing particles and contamination by matching beam complementary aperture shapes to beam shapes
US8669539B2 (en) * 2010-03-29 2014-03-11 Advanced Ion Beam Technology, Inc. Implant method and implanter by using a variable aperture
EP3621098A1 (de) * 2018-09-04 2020-03-11 Justus-Liebig-Universität Gießen Vorrichtung zur erzeugung von ionenstrahlen mit anpassbaren ionenstrahlprofilen
US11574796B1 (en) * 2021-07-21 2023-02-07 Applied Materials, Inc. Dual XY variable aperture in an ion implantation system

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2253253A1 (en) * 1973-12-04 1975-06-27 Thomson Csf Adjustable and refrigerated sample support - for charged particle appts. can be rotated and inclined
US4118630A (en) * 1977-05-05 1978-10-03 International Business Machines Corporation Ion implantation apparatus with a cooled structure controlling the surface potential of a target surface
JPS62177844A (ja) * 1986-01-31 1987-08-04 Hitachi Ltd ５軸マニピユレ−タ
US4700077A (en) * 1986-03-05 1987-10-13 Eaton Corporation Ion beam implanter control system
JPH0834093B2 (ja) * 1986-05-28 1996-03-29 東京エレクトロン株式会社 イオン注入方法
JP2582552B2 (ja) * 1986-05-29 1997-02-19 三菱電機株式会社 イオン注入装置
US4745287A (en) * 1986-10-23 1988-05-17 Ionex/Hei Ion implantation with variable implant angle
US4804852A (en) * 1987-01-29 1989-02-14 Eaton Corporation Treating work pieces with electro-magnetically scanned ion beams

Also Published As

Publication number Publication date
US4943728A (en) 1990-07-24
DE69019557D1 (de) 1995-06-29
EP0385708A2 (de) 1990-09-05
EP0385708B1 (de) 1995-05-24
JPH02278648A (ja) 1990-11-14
KR900013580A (ko) 1990-09-06
KR950001499B1 (ko) 1995-02-25
EP0385708A3 (de) 1991-05-29
JP2779971B2 (ja) 1998-07-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AXCELIS TECHNOLOGIES, INC., BEVERLY, MASS., US

8339 Ceased/non-payment of the annual fee