DE69017172T2 - Bildaufnahmeeinrichtung mit integrierten Ablenkschaltungen. - Google Patents

Bildaufnahmeeinrichtung mit integrierten Ablenkschaltungen.

Info

Publication number
DE69017172T2
DE69017172T2 DE69017172T DE69017172T DE69017172T2 DE 69017172 T2 DE69017172 T2 DE 69017172T2 DE 69017172 T DE69017172 T DE 69017172T DE 69017172 T DE69017172 T DE 69017172T DE 69017172 T2 DE69017172 T2 DE 69017172T2
Authority
DE
Germany
Prior art keywords
detectors
image
columns
rows
scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69017172T
Other languages
English (en)
Other versions
DE69017172D1 (de
Inventor
Luc Audaire
Philippe Pantigny
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE69017172D1 publication Critical patent/DE69017172D1/de
Publication of DE69017172T2 publication Critical patent/DE69017172T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H01L27/14856—Time-delay and integration
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/711—Time delay and integration [TDI] registers; TDI shift registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/715—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame interline transfer [FIT]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Investigating Or Analysing Biological Materials (AREA)
DE69017172T 1989-12-29 1990-12-27 Bildaufnahmeeinrichtung mit integrierten Ablenkschaltungen. Expired - Fee Related DE69017172T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8917448A FR2656756B1 (fr) 1989-12-29 1989-12-29 Dispositif pour prises de vues a circuits de balayage integres.

Publications (2)

Publication Number Publication Date
DE69017172D1 DE69017172D1 (de) 1995-03-30
DE69017172T2 true DE69017172T2 (de) 1995-09-28

Family

ID=9389145

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69017172T Expired - Fee Related DE69017172T2 (de) 1989-12-29 1990-12-27 Bildaufnahmeeinrichtung mit integrierten Ablenkschaltungen.

Country Status (6)

Country Link
US (1) US5113263A (de)
EP (1) EP0435773B1 (de)
JP (1) JPH03295374A (de)
AT (1) ATE118948T1 (de)
DE (1) DE69017172T2 (de)
FR (1) FR2656756B1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2666714A1 (fr) * 1990-09-07 1992-03-13 Thomson Composants Militaires Detecteur d'image a pixels de grandes dimensions.
DE4134666C2 (de) * 1991-10-19 2002-03-28 Zeiss Carl Verfahren und Schaltung zur Verarbeitung optischer Signale
FR2685846B1 (fr) * 1991-12-31 1995-10-06 Thomson Csf Camera a detecteur, munie d'une protection electronique.
FR2700091B1 (fr) * 1992-12-30 1995-01-27 Thomson Csf Semiconducteurs Détecteur d'image thermique avec période d'obturation rapide et procédé de fonctionnement.
FR2714501B1 (fr) * 1993-12-23 1996-01-26 Thomson Csf Sommateur de tensions, et mosaïque de sommateurs, pour appareil d'imagerie thermique.
GB2289983B (en) 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
JP2891880B2 (ja) * 1994-08-31 1999-05-17 日本電気株式会社 固体撮像装置
DE4443821A1 (de) * 1994-12-09 1996-06-20 Telefunken Microelectron Bildaufnahmevorrichtung
US7139025B1 (en) * 1998-10-29 2006-11-21 Micron Technology, Inc. Active pixel sensor with mixed analog and digital signal integration
GB2343577B (en) * 1998-11-05 2001-01-24 Simage Oy Imaging device
US9029793B2 (en) * 1998-11-05 2015-05-12 Siemens Aktiengesellschaft Imaging device
US6472653B1 (en) 1999-03-22 2002-10-29 Sarnoff Corporation Method and apparatus to extend dynamic range of time delay and integrate charge coupled devices
US20020097330A1 (en) * 2001-01-25 2002-07-25 Spears Kurt E. Photosensor array using segmented charge transfer gates to improve processing time for small images
GB0224689D0 (en) * 2002-10-23 2002-12-04 Simage Oy Formation of contacts on semiconductor substrates
US7872237B2 (en) * 2002-10-25 2011-01-18 Ipl Intellectual Property Licensing Limited Circuit substrate and method
IL173418A (en) * 2006-01-29 2013-10-31 Rafael Advanced Defense Sys Correction of unevenness of characters produced by staring detectors
TWI600324B (zh) * 2014-06-23 2017-09-21 Infrared Focal Plane Array Module Performance Parameters Measurement Method and Detection of Dead pixels

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4054797A (en) * 1976-09-23 1977-10-18 The United States Of America As Represented By The Secretary Of The Navy Series-parallel scan, IR, CID, focal-plane array
US4280141A (en) * 1978-09-22 1981-07-21 Mccann David H Time delay and integration detectors using charge transfer devices
JPS5672573A (en) * 1979-11-19 1981-06-16 Ricoh Co Ltd Self-scanning type photodiode array and its picture information read system
FR2554955B1 (fr) * 1983-11-10 1989-05-26 Thomson Csf Barrette multilineaire a transfert de charge
FR2577340B1 (fr) * 1985-02-12 1987-03-06 Thomson Csf Dispositif de lecture avec accumulation de charges de detecteurs photosensibles

Also Published As

Publication number Publication date
FR2656756A1 (fr) 1991-07-05
ATE118948T1 (de) 1995-03-15
US5113263A (en) 1992-05-12
EP0435773A1 (de) 1991-07-03
EP0435773B1 (de) 1995-02-22
DE69017172D1 (de) 1995-03-30
JPH03295374A (ja) 1991-12-26
FR2656756B1 (fr) 1994-01-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee