DE69017075T2 - Ionen-Implantationsgerät. - Google Patents
Ionen-Implantationsgerät.Info
- Publication number
- DE69017075T2 DE69017075T2 DE69017075T DE69017075T DE69017075T2 DE 69017075 T2 DE69017075 T2 DE 69017075T2 DE 69017075 T DE69017075 T DE 69017075T DE 69017075 T DE69017075 T DE 69017075T DE 69017075 T2 DE69017075 T2 DE 69017075T2
- Authority
- DE
- Germany
- Prior art keywords
- ion implantation
- implantation device
- ion
- implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12245089 | 1989-05-15 | ||
JP16355789 | 1989-06-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69017075D1 DE69017075D1 (de) | 1995-03-30 |
DE69017075T2 true DE69017075T2 (de) | 1995-06-14 |
Family
ID=26459574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69017075T Expired - Fee Related DE69017075T2 (de) | 1989-05-15 | 1990-05-15 | Ionen-Implantationsgerät. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5046148A (de) |
EP (1) | EP0398270B1 (de) |
JP (1) | JPH077658B2 (de) |
DE (1) | DE69017075T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2969788B2 (ja) * | 1990-05-17 | 1999-11-02 | 日新電機株式会社 | イオンビームの平行度測定方法、走査波形整形方法およびイオン注入装置 |
JP3125384B2 (ja) * | 1991-11-14 | 2001-01-15 | 日本電気株式会社 | イオン注入装置 |
JP3003088B2 (ja) * | 1994-06-10 | 2000-01-24 | 住友イートンノバ株式会社 | イオン注入装置 |
US5811823A (en) * | 1996-02-16 | 1998-09-22 | Eaton Corporation | Control mechanisms for dosimetry control in ion implantation systems |
US6271529B1 (en) | 1997-12-01 | 2001-08-07 | Ebara Corporation | Ion implantation with charge neutralization |
JP3567749B2 (ja) | 1998-07-22 | 2004-09-22 | 日新電機株式会社 | 荷電粒子ビームの分布測定方法およびそれに関連する方法 |
US6297510B1 (en) * | 1999-04-19 | 2001-10-02 | Applied Materials, Inc. | Ion implant dose control |
JP3341749B2 (ja) | 1999-12-28 | 2002-11-05 | 日新電機株式会社 | イオン注入方法およびイオン注入装置 |
US20020175297A1 (en) * | 2001-05-25 | 2002-11-28 | Scheuer Jay T. | Methods and apparatus for ion implantation with variable spatial frequency scan lines |
JP3692999B2 (ja) * | 2001-10-26 | 2005-09-07 | 日新イオン機器株式会社 | イオン注入方法およびその装置 |
US20030122088A1 (en) * | 2001-11-14 | 2003-07-03 | Varian Semiconductor Equipment Associates, Inc. | Scan methods and apparatus for ion implantation |
US7391038B2 (en) * | 2006-03-21 | 2008-06-24 | Varian Semiconductor Equipment Associates, Inc. | Technique for isocentric ion beam scanning |
JP4471008B2 (ja) | 2008-02-12 | 2010-06-02 | 日新イオン機器株式会社 | イオン注入方法およびイオン注入装置 |
JP4471009B2 (ja) | 2008-02-12 | 2010-06-02 | 日新イオン機器株式会社 | イオン注入方法およびイオン注入装置 |
JP5904895B2 (ja) * | 2012-07-12 | 2016-04-20 | 住友重機械イオンテクノロジー株式会社 | イオン注入方法およびイオン注入装置 |
JP6195538B2 (ja) * | 2014-04-25 | 2017-09-13 | 住友重機械イオンテクノロジー株式会社 | イオン注入方法及びイオン注入装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4021675A (en) * | 1973-02-20 | 1977-05-03 | Hughes Aircraft Company | System for controlling ion implantation dosage in electronic materials |
EP0178803A3 (de) * | 1984-09-19 | 1988-07-20 | Applied Materials, Inc. | Vorrichtungen und Verfahren zur Ionenimplantation von Halbleiterplättchen |
US4733091A (en) * | 1984-09-19 | 1988-03-22 | Applied Materials, Inc. | Systems and methods for ion implantation of semiconductor wafers |
US4922106A (en) * | 1986-04-09 | 1990-05-01 | Varian Associates, Inc. | Ion beam scanning method and apparatus |
EP0263876B1 (de) * | 1986-04-09 | 2002-11-13 | Varian Semiconductor Equipment Associates Inc. | Ionenstrahlabtastverfahren und vorrichtung |
US4899059A (en) * | 1988-05-18 | 1990-02-06 | Varian Associates, Inc. | Disk scanning apparatus for batch ion implanters |
-
1990
- 1990-04-23 JP JP2107092A patent/JPH077658B2/ja not_active Expired - Fee Related
- 1990-05-14 US US07/522,786 patent/US5046148A/en not_active Expired - Lifetime
- 1990-05-15 DE DE69017075T patent/DE69017075T2/de not_active Expired - Fee Related
- 1990-05-15 EP EP90109165A patent/EP0398270B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH03114128A (ja) | 1991-05-15 |
EP0398270A2 (de) | 1990-11-22 |
US5046148A (en) | 1991-09-03 |
EP0398270B1 (de) | 1995-02-22 |
JPH077658B2 (ja) | 1995-01-30 |
DE69017075D1 (de) | 1995-03-30 |
EP0398270A3 (de) | 1991-05-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NISSIN ION EQUIPMENT CO., LTD., KYOTO, JP |
|
8339 | Ceased/non-payment of the annual fee |