DE69016073T2 - Verfahren zur Herstellung eines Kristalls und Kristallkörpers. - Google Patents
Verfahren zur Herstellung eines Kristalls und Kristallkörpers.Info
- Publication number
- DE69016073T2 DE69016073T2 DE69016073T DE69016073T DE69016073T2 DE 69016073 T2 DE69016073 T2 DE 69016073T2 DE 69016073 T DE69016073 T DE 69016073T DE 69016073 T DE69016073 T DE 69016073T DE 69016073 T2 DE69016073 T2 DE 69016073T2
- Authority
- DE
- Germany
- Prior art keywords
- crystal
- manufacturing
- crystal body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1081104A JP2858434B2 (ja) | 1989-03-31 | 1989-03-31 | 結晶の形成方法および結晶物品 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69016073D1 DE69016073D1 (de) | 1995-03-02 |
DE69016073T2 true DE69016073T2 (de) | 1995-05-24 |
Family
ID=13737077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69016073T Expired - Fee Related DE69016073T2 (de) | 1989-03-31 | 1990-03-29 | Verfahren zur Herstellung eines Kristalls und Kristallkörpers. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5423286A (de) |
EP (1) | EP0390549B1 (de) |
JP (1) | JP2858434B2 (de) |
DE (1) | DE69016073T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0484922B1 (de) * | 1990-11-07 | 1997-10-15 | Canon Kabushiki Kaisha | III-V Verbindungs-Halbleiter-Vorrichtung, Drucker- und Anzeigevorrichtung unter Verwendung derselben, und Verfahren zur Herstellung dieser Vorrichtung |
US6221444B1 (en) | 1998-06-10 | 2001-04-24 | Canon Kabushiki Kaisha | Liquid crystal device |
US6608679B1 (en) * | 1998-12-21 | 2003-08-19 | Xerox Corporation | Spectrophotometric analysis of input light |
US6514829B1 (en) | 2001-03-12 | 2003-02-04 | Advanced Micro Devices, Inc. | Method of fabricating abrupt source/drain junctions |
US6534373B1 (en) * | 2001-03-26 | 2003-03-18 | Advanced Micro Devices, Inc. | MOS transistor with reduced floating body effect |
JP4310076B2 (ja) * | 2001-05-31 | 2009-08-05 | キヤノン株式会社 | 結晶性薄膜の製造方法 |
KR100434698B1 (ko) * | 2001-09-05 | 2004-06-07 | 주식회사 하이닉스반도체 | 반도체소자의 선택적 에피성장법 |
JP2011258768A (ja) * | 2010-06-09 | 2011-12-22 | Sumitomo Electric Ind Ltd | 炭化珪素基板、エピタキシャル層付き基板、半導体装置および炭化珪素基板の製造方法 |
US20130051530A1 (en) * | 2011-08-30 | 2013-02-28 | Fujifilm Corporation | High Aspect Ratio Grid for Phase Contrast X-ray Imaging and Method of Making the Same |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3620833A (en) * | 1966-12-23 | 1971-11-16 | Texas Instruments Inc | Integrated circuit fabrication |
US3585088A (en) * | 1968-10-18 | 1971-06-15 | Ibm | Methods of producing single crystals on supporting substrates |
US4333792A (en) * | 1977-01-03 | 1982-06-08 | Massachusetts Institute Of Technology | Enhancing epitaxy and preferred orientation |
CA1139453A (en) * | 1979-05-29 | 1983-01-11 | Henry I. Smith | Improving graphoepitaxy |
JPS5734331A (en) * | 1980-08-11 | 1982-02-24 | Toshiba Corp | Manufacture of semiconductor device |
JPS5795619A (en) * | 1980-12-05 | 1982-06-14 | Toshiba Corp | Lithographic epitaxial substrate |
US4371421A (en) * | 1981-04-16 | 1983-02-01 | Massachusetts Institute Of Technology | Lateral epitaxial growth by seeded solidification |
US4670088A (en) * | 1982-03-18 | 1987-06-02 | Massachusetts Institute Of Technology | Lateral epitaxial growth by seeded solidification |
US4657603A (en) * | 1984-10-10 | 1987-04-14 | Siemens Aktiengesellschaft | Method for the manufacture of gallium arsenide thin film solar cells |
JPH0782996B2 (ja) * | 1986-03-28 | 1995-09-06 | キヤノン株式会社 | 結晶の形成方法 |
JPH0828470B2 (ja) * | 1986-11-07 | 1996-03-21 | キヤノン株式会社 | 半導体メモリ装置 |
US4749660A (en) * | 1986-11-26 | 1988-06-07 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of making an article comprising a buried SiO2 layer |
-
1989
- 1989-03-31 JP JP1081104A patent/JP2858434B2/ja not_active Expired - Fee Related
-
1990
- 1990-03-29 EP EP90303347A patent/EP0390549B1/de not_active Expired - Lifetime
- 1990-03-29 DE DE69016073T patent/DE69016073T2/de not_active Expired - Fee Related
-
1994
- 1994-05-19 US US08/246,558 patent/US5423286A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0390549A3 (de) | 1991-02-06 |
JPH02260523A (ja) | 1990-10-23 |
EP0390549A2 (de) | 1990-10-03 |
EP0390549B1 (de) | 1995-01-18 |
JP2858434B2 (ja) | 1999-02-17 |
US5423286A (en) | 1995-06-13 |
DE69016073D1 (de) | 1995-03-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |