DE69000150D1 - Hochspannungs-spiralwiderstand. - Google Patents

Hochspannungs-spiralwiderstand.

Info

Publication number
DE69000150D1
DE69000150D1 DE9090420181T DE69000150T DE69000150D1 DE 69000150 D1 DE69000150 D1 DE 69000150D1 DE 9090420181 T DE9090420181 T DE 9090420181T DE 69000150 T DE69000150 T DE 69000150T DE 69000150 D1 DE69000150 D1 DE 69000150D1
Authority
DE
Germany
Prior art keywords
high voltage
spiral resistance
voltage spiral
resistance
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE9090420181T
Other languages
English (en)
Other versions
DE69000150T2 (de
Inventor
Jacques Mille
Daniel Quessada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Publication of DE69000150D1 publication Critical patent/DE69000150D1/de
Application granted granted Critical
Publication of DE69000150T2 publication Critical patent/DE69000150T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE9090420181T 1989-04-14 1990-04-11 Hochspannungs-spiralwiderstand. Expired - Fee Related DE69000150T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8905280A FR2646019B1 (fr) 1989-04-14 1989-04-14 Resistance spirale haute tension

Publications (2)

Publication Number Publication Date
DE69000150D1 true DE69000150D1 (de) 1992-07-23
DE69000150T2 DE69000150T2 (de) 1993-02-11

Family

ID=9380957

Family Applications (1)

Application Number Title Priority Date Filing Date
DE9090420181T Expired - Fee Related DE69000150T2 (de) 1989-04-14 1990-04-11 Hochspannungs-spiralwiderstand.

Country Status (6)

Country Link
US (1) US5053743A (de)
EP (1) EP0392944B1 (de)
JP (1) JP3131974B2 (de)
KR (1) KR900017197A (de)
DE (1) DE69000150T2 (de)
FR (1) FR2646019B1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5312442A (en) * 1992-05-05 1994-05-17 Cardiac Pacemakers, Inc. Energy dissipation resistor for implantable defibrillation circuitry
DE69224827T2 (de) * 1992-05-28 1998-09-10 Cons Ric Microelettronica Auf einem Halbleitersubstrat integrierter Spiralwiderstand
FR2693035B1 (fr) * 1992-06-30 1994-09-30 Sgs Thomson Microelectronics Diode de protection pour composant semiconducteur vertical.
US6222247B1 (en) * 1999-12-02 2001-04-24 United Microelectronics Corp. Semiconductor resistor that can be withstand high voltages
US6452477B1 (en) * 2000-09-06 2002-09-17 Marconi Medical Systems, Inc. High voltage low inductance circuit protection resistor
AT414181B (de) * 2001-01-04 2006-10-15 Lem Norma Gmbh Elektrischer widerstand für die messung insbesondere hochfrequenter wechselströme
EP1258891A2 (de) * 2001-05-17 2002-11-20 Shipley Co. L.L.C. Widerstände
AU2002241256A1 (en) * 2002-02-28 2003-09-09 Stmicroelectronics S.R.L. Bipolar transistor structure
US7306999B2 (en) * 2005-01-25 2007-12-11 Semiconductor Components Industries, L.L.C. High voltage sensor device and method therefor
US7955943B2 (en) * 2005-01-25 2011-06-07 Semiconductor Components Industries, Llc High voltage sensor device and method therefor
US7956418B2 (en) * 2007-05-29 2011-06-07 Mediatek Inc. ESD protection devices
WO2013063032A1 (en) * 2011-10-25 2013-05-02 Brookhaven Science Associates, Llc Spiral biasing adaptor for use in si drift detectors and si drift detector arrays
US8786397B1 (en) * 2013-02-07 2014-07-22 Excelliance Mos Corporation Electric field resistor
JP6649102B2 (ja) * 2016-02-05 2020-02-19 ルネサスエレクトロニクス株式会社 半導体装置
US11152454B2 (en) * 2019-02-19 2021-10-19 Semiconductor Components Industries, Llc Method of forming a semiconductor device having a resistor and structure therefor
CN111463283B (zh) * 2020-03-30 2023-09-26 南京华瑞微集成电路有限公司 集成启动管、采样管和二极管的dmos结构及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2775673A (en) * 1954-05-26 1956-12-25 Frank G Johnson Resistor
US3955169A (en) * 1974-11-08 1976-05-04 The United States Of America As Represented By The Secretary Of The Air Force High power resistor
US4139833A (en) * 1976-11-22 1979-02-13 Gould Inc. Resistance temperature sensor
JPS6097659A (ja) * 1983-11-01 1985-05-31 Matsushita Electronics Corp 半導体集積回路
EP0240690B1 (de) * 1986-03-05 1991-04-10 Siemens Aktiengesellschaft Thyristor mit einstellbarem Basis-Emitter-Widerstand
FR2596922B1 (fr) * 1986-04-04 1988-05-20 Thomson Csf Resistance integree sur un substrat semi-conducteur

Also Published As

Publication number Publication date
KR900017197A (ko) 1990-11-15
EP0392944A1 (de) 1990-10-17
EP0392944B1 (de) 1992-06-17
DE69000150T2 (de) 1993-02-11
JPH02296363A (ja) 1990-12-06
US5053743A (en) 1991-10-01
JP3131974B2 (ja) 2001-02-05
FR2646019B1 (fr) 1991-07-19
FR2646019A1 (fr) 1990-10-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee