DE68925879D1 - Thermisches Oxydierungsverfahren mit verändertem Wachstum für dünne Oxide - Google Patents

Thermisches Oxydierungsverfahren mit verändertem Wachstum für dünne Oxide

Info

Publication number
DE68925879D1
DE68925879D1 DE68925879T DE68925879T DE68925879D1 DE 68925879 D1 DE68925879 D1 DE 68925879D1 DE 68925879 T DE68925879 T DE 68925879T DE 68925879 T DE68925879 T DE 68925879T DE 68925879 D1 DE68925879 D1 DE 68925879D1
Authority
DE
Germany
Prior art keywords
thermal oxidation
oxidation process
modified growth
thin oxides
oxides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68925879T
Other languages
English (en)
Other versions
DE68925879T2 (de
Inventor
Pradip Kumar Roy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE68925879D1 publication Critical patent/DE68925879D1/de
Application granted granted Critical
Publication of DE68925879T2 publication Critical patent/DE68925879T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Silicon Compounds (AREA)
DE68925879T 1988-12-21 1989-12-11 Thermisches Oxydierungsverfahren mit verändertem Wachstum für dünne Oxide Expired - Fee Related DE68925879T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US28797688A 1988-12-21 1988-12-21

Publications (2)

Publication Number Publication Date
DE68925879D1 true DE68925879D1 (de) 1996-04-11
DE68925879T2 DE68925879T2 (de) 1996-10-02

Family

ID=23105207

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68925879T Expired - Fee Related DE68925879T2 (de) 1988-12-21 1989-12-11 Thermisches Oxydierungsverfahren mit verändertem Wachstum für dünne Oxide

Country Status (6)

Country Link
US (1) US5132244A (de)
EP (1) EP0375232B1 (de)
JP (1) JPH0648683B2 (de)
CA (1) CA2005785A1 (de)
DE (1) DE68925879T2 (de)
ES (1) ES2084606T3 (de)

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US5506178A (en) * 1992-12-25 1996-04-09 Sony Corporation Process for forming gate silicon oxide film for MOS transistors
JPH0745603A (ja) * 1993-07-27 1995-02-14 Shin Etsu Handotai Co Ltd 半導体装置の製造方法及びその製造工程の管理方法
JP3417665B2 (ja) * 1994-07-07 2003-06-16 株式会社東芝 半導体装置の製造方法
KR100187674B1 (ko) * 1994-07-07 1999-06-01 김주용 반도체 소자 제조용 반응로 및 그를 이용한 게이트 산화막 형성방법
JP3542189B2 (ja) * 1995-03-08 2004-07-14 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
US6548854B1 (en) 1997-12-22 2003-04-15 Agere Systems Inc. Compound, high-K, gate and capacitor insulator layer
JPH10209168A (ja) * 1997-01-24 1998-08-07 Nec Corp 半導体装置の製造方法
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US5851892A (en) * 1997-05-07 1998-12-22 Cypress Semiconductor Corp. Fabrication sequence employing an oxide formed with minimized inducted charge and/or maximized breakdown voltage
US5981403A (en) * 1997-11-24 1999-11-09 Lucent Technologies, Inc. Layered silicon nitride deposition process
US6147388A (en) * 1997-11-24 2000-11-14 Lucent Technologies, Inc. Polycide gate structure with intermediate barrier
US6271153B1 (en) 1998-07-22 2001-08-07 Micron Technology, Inc. Semiconductor processing method and trench isolation method
US6177363B1 (en) * 1998-09-29 2001-01-23 Lucent Technologies Inc. Method for forming a nitride layer suitable for use in advanced gate dielectric materials
US6221790B1 (en) * 1998-11-19 2001-04-24 Taiwan Semiconductor Manufacturing Company Stable thin film oxide standard
US6748994B2 (en) * 2001-04-11 2004-06-15 Avery Dennison Corporation Label applicator, method and label therefor
US7144822B1 (en) * 2002-02-06 2006-12-05 Novellus Systems, Inc. High density plasma process for optimum film quality and electrical results
AU2003255254A1 (en) 2002-08-08 2004-02-25 Glenn J. Leedy Vertical system integration
US7084048B2 (en) * 2004-05-07 2006-08-01 Memc Electronic Materials, Inc. Process for metallic contamination reduction in silicon wafers
JP5996217B2 (ja) * 2012-03-02 2016-09-21 アルプス電気株式会社 ガラス複合体、ガラス複合体を用いた入力装置、及び、電子機器
RU2539801C1 (ru) * 2013-07-01 2015-01-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления тонкого слоя диоксида кремния
RU2688864C1 (ru) * 2018-03-12 2019-05-22 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводникового прибора
RU2688881C1 (ru) * 2018-04-18 2019-05-22 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводникового прибора
RU2680989C1 (ru) * 2018-05-07 2019-03-01 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Способ изготовления полупроводникового прибора

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Also Published As

Publication number Publication date
CA2005785A1 (en) 1990-06-21
EP0375232B1 (de) 1996-03-06
EP0375232A2 (de) 1990-06-27
JPH03129735A (ja) 1991-06-03
US5132244A (en) 1992-07-21
JPH0648683B2 (ja) 1994-06-22
DE68925879T2 (de) 1996-10-02
ES2084606T3 (es) 1996-05-16
EP0375232A3 (en) 1990-08-22

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