DE68923429D1 - Oxydsupraleitendes Bauelement. - Google Patents

Oxydsupraleitendes Bauelement.

Info

Publication number
DE68923429D1
DE68923429D1 DE68923429T DE68923429T DE68923429D1 DE 68923429 D1 DE68923429 D1 DE 68923429D1 DE 68923429 T DE68923429 T DE 68923429T DE 68923429 T DE68923429 T DE 68923429T DE 68923429 D1 DE68923429 D1 DE 68923429D1
Authority
DE
Germany
Prior art keywords
oxide superconducting
superconducting device
oxide
superconducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68923429T
Other languages
English (en)
Other versions
DE68923429T2 (de
Inventor
Haruhiro Hitachi Dain Hasegawa
Toshiyuki Aida
Toshikazu Nishino
Mutsuko Hatano
Hideaki Nakane
Tokuumi Fukazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE68923429D1 publication Critical patent/DE68923429D1/de
Application granted granted Critical
Publication of DE68923429T2 publication Critical patent/DE68923429T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
DE68923429T 1988-11-28 1989-11-28 Oxydsupraleitendes Bauelement. Expired - Fee Related DE68923429T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP29809488 1988-11-28
JP5641989 1989-03-10
JP18463989 1989-07-19
JP24628489 1989-09-25

Publications (2)

Publication Number Publication Date
DE68923429D1 true DE68923429D1 (de) 1995-08-17
DE68923429T2 DE68923429T2 (de) 1996-03-07

Family

ID=27463341

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68923429T Expired - Fee Related DE68923429T2 (de) 1988-11-28 1989-11-28 Oxydsupraleitendes Bauelement.

Country Status (4)

Country Link
EP (1) EP0371462B1 (de)
JP (1) JP3020524B2 (de)
KR (1) KR900008706A (de)
DE (1) DE68923429T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69023376T2 (de) * 1989-03-30 1996-06-27 Ngk Insulators Ltd Verbundstruktursupraleiter.
EP0494580B1 (de) * 1991-01-07 2002-04-03 International Business Machines Corporation Supraleitender Feldeffekttransistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung
EP0523275B1 (de) * 1991-07-19 1996-02-28 International Business Machines Corporation Verbesserter supraleitender Feldeffekt-Transistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung
JP2008239456A (ja) * 2007-03-29 2008-10-09 Shimane Univ 機能性チタン酸ストロンチウム結晶およびその製造方法。
US11624126B2 (en) 2020-06-16 2023-04-11 Ohio State Innovation Foundation Deposition of single phase beta-(AlxGa1-x)2O3 thin films with 0.28< =x<=0.7 on beta Ga2O3(100) or (−201) substrates by chemical vapor deposition

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3850580T2 (de) * 1987-01-30 1994-10-27 Hitachi Ltd Supraleiteranordnung.
CN1014382B (zh) * 1987-08-24 1991-10-16 株式会社半导体能源研究所 采用超导材料的电子器件
JPH01161881A (ja) * 1987-12-18 1989-06-26 Nec Corp ジョセフソン素子およびその製造方法

Also Published As

Publication number Publication date
EP0371462A2 (de) 1990-06-06
JPH03188686A (ja) 1991-08-16
JP3020524B2 (ja) 2000-03-15
EP0371462A3 (en) 1990-09-26
EP0371462B1 (de) 1995-07-12
DE68923429T2 (de) 1996-03-07
KR900008706A (ko) 1990-06-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee