DE68923341D1 - Dünnfilmtransistor und Kreuzungsstruktur für Flüssigkristall-Anzeigevorrichtung und Methode ihrer Herstellung. - Google Patents

Dünnfilmtransistor und Kreuzungsstruktur für Flüssigkristall-Anzeigevorrichtung und Methode ihrer Herstellung.

Info

Publication number
DE68923341D1
DE68923341D1 DE68923341T DE68923341T DE68923341D1 DE 68923341 D1 DE68923341 D1 DE 68923341D1 DE 68923341 T DE68923341 T DE 68923341T DE 68923341 T DE68923341 T DE 68923341T DE 68923341 D1 DE68923341 D1 DE 68923341D1
Authority
DE
Germany
Prior art keywords
manufacturing
liquid crystal
display device
thin film
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68923341T
Other languages
English (en)
Other versions
DE68923341T2 (de
Inventor
Alfred Charles Ipri
Roger Green Stewart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE68923341D1 publication Critical patent/DE68923341D1/de
Application granted granted Critical
Publication of DE68923341T2 publication Critical patent/DE68923341T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
DE68923341T 1988-10-21 1989-10-20 Dünnfilmtransistor und Kreuzungsstruktur für Flüssigkristall-Anzeigevorrichtung und Methode ihrer Herstellung. Expired - Fee Related DE68923341T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/260,845 US4965646A (en) 1988-10-21 1988-10-21 Thin film transistor and crossover structure for liquid crystal displays

Publications (2)

Publication Number Publication Date
DE68923341D1 true DE68923341D1 (de) 1995-08-10
DE68923341T2 DE68923341T2 (de) 1996-04-04

Family

ID=22990859

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68923341T Expired - Fee Related DE68923341T2 (de) 1988-10-21 1989-10-20 Dünnfilmtransistor und Kreuzungsstruktur für Flüssigkristall-Anzeigevorrichtung und Methode ihrer Herstellung.

Country Status (5)

Country Link
US (1) US4965646A (de)
EP (1) EP0365036B1 (de)
JP (1) JP2820738B2 (de)
KR (1) KR0137938B1 (de)
DE (1) DE68923341T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04342142A (ja) * 1991-05-17 1992-11-27 Sony Corp 高電子移動度電界効果型トランジスタ
FR2714766B1 (fr) * 1993-12-30 1996-02-02 France Telecom Procédé de fabrication d'un écran d'affichage à matrice active.
JPH07318978A (ja) * 1994-05-20 1995-12-08 Sony Corp 表示素子用薄膜トランジスタアレイ
US6051493A (en) * 1994-10-14 2000-04-18 The Regents Of The University Of California Process for protecting bonded components from plating shorts
KR100333180B1 (ko) * 1998-06-30 2003-06-19 주식회사 현대 디스플레이 테크놀로지 Tft-lcd제조방법
US8477121B2 (en) * 2006-04-19 2013-07-02 Ignis Innovation, Inc. Stable driving scheme for active matrix displays
CN101599496B (zh) * 2008-06-06 2011-06-15 群康科技(深圳)有限公司 薄膜晶体管基板与薄膜晶体管母基板
CN102244034B (zh) * 2010-05-14 2014-02-19 北京京东方光电科技有限公司 阵列基板及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100173A (ja) * 1983-11-07 1985-06-04 セイコーインスツルメンツ株式会社 液晶表示装置の製造方法
JPH0824185B2 (ja) * 1985-03-08 1996-03-06 セイコー電子工業株式会社 薄膜トランジスタ装置とその製造方法
FR2586859B1 (fr) * 1985-08-27 1987-11-20 Thomson Csf Procede de fabrication d'un transistor de commande pour ecran plat de visualisation et element de commande realise selon ce procede
FR2602361B1 (fr) * 1986-01-27 1989-05-19 Maurice Francois Ecran d'affichage a matrice active sans transistor parasite et procede de fabrication de cet ecran
FR2593631B1 (fr) * 1986-01-27 1989-02-17 Maurice Francois Ecran d'affichage a matrice active a resistance de grille et procedes de fabrication de cet ecran
US4680085A (en) * 1986-04-14 1987-07-14 Ovonic Imaging Systems, Inc. Method of forming thin film semiconductor devices

Also Published As

Publication number Publication date
EP0365036A3 (de) 1991-04-03
EP0365036B1 (de) 1995-07-05
JPH02211429A (ja) 1990-08-22
EP0365036A2 (de) 1990-04-25
US4965646A (en) 1990-10-23
KR0137938B1 (ko) 1998-06-01
DE68923341T2 (de) 1996-04-04
KR900007119A (ko) 1990-05-09
JP2820738B2 (ja) 1998-11-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee