DE68917142D1 - Durch Plasma/Strahlung unterstütztes Molekularstrahl-Epitaxieverfahren und Vorrichtung. - Google Patents

Durch Plasma/Strahlung unterstütztes Molekularstrahl-Epitaxieverfahren und Vorrichtung.

Info

Publication number
DE68917142D1
DE68917142D1 DE68917142T DE68917142T DE68917142D1 DE 68917142 D1 DE68917142 D1 DE 68917142D1 DE 68917142 T DE68917142 T DE 68917142T DE 68917142 T DE68917142 T DE 68917142T DE 68917142 D1 DE68917142 D1 DE 68917142D1
Authority
DE
Germany
Prior art keywords
plasma
molecular beam
beam epitaxy
epitaxy process
assisted molecular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68917142T
Other languages
English (en)
Other versions
DE68917142T2 (de
Inventor
John R Beattie
Jesse N Matossian
Owen K Wu
Juan F Lam
Julius Hyman
C Lawrence Anderson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DirecTV Group Inc
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of DE68917142D1 publication Critical patent/DE68917142D1/de
Publication of DE68917142T2 publication Critical patent/DE68917142T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE68917142T 1989-01-13 1989-12-20 Durch Plasma/Strahlung unterstütztes Molekularstrahl-Epitaxieverfahren und Vorrichtung. Expired - Lifetime DE68917142T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28130989A 1989-01-13 1989-01-13
PCT/US1989/005835 WO1990008210A2 (en) 1989-01-13 1989-12-20 Plasma/radiation assisted molecular beam epitaxy method and apparatus

Publications (2)

Publication Number Publication Date
DE68917142D1 true DE68917142D1 (de) 1994-09-01
DE68917142T2 DE68917142T2 (de) 1994-11-17

Family

ID=23076756

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68917142T Expired - Lifetime DE68917142T2 (de) 1989-01-13 1989-12-20 Durch Plasma/Strahlung unterstütztes Molekularstrahl-Epitaxieverfahren und Vorrichtung.

Country Status (5)

Country Link
EP (1) EP0425589B1 (de)
JP (1) JP2583672B2 (de)
DE (1) DE68917142T2 (de)
IL (1) IL92949A (de)
WO (1) WO1990008210A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121329A (ja) * 1991-10-30 1993-05-18 Toshiba Corp 化合物薄膜の製造方法及び製造装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5919190B2 (ja) * 1980-03-31 1984-05-02 双葉電子工業株式会社 鉛皮膜の製造方法
JPS5957416A (ja) * 1982-09-27 1984-04-03 Konishiroku Photo Ind Co Ltd 化合物半導体層の形成方法
JP2741859B2 (ja) * 1987-08-28 1998-04-22 株式会社日立製作所 分子線エピタキシー

Also Published As

Publication number Publication date
EP0425589A1 (de) 1991-05-08
DE68917142T2 (de) 1994-11-17
IL92949A0 (en) 1990-09-17
IL92949A (en) 1994-01-25
EP0425589B1 (de) 1994-07-27
JP2583672B2 (ja) 1997-02-19
WO1990008210A2 (en) 1990-07-26
WO1990008210A3 (en) 1990-09-20
JPH03503278A (ja) 1991-07-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: HUGHES ELECTRONICS CORP., EL SEGUNDO, CALIF., US