DE68916721D1 - Esd-schutzschaltung mit kanalverarmung. - Google Patents

Esd-schutzschaltung mit kanalverarmung.

Info

Publication number
DE68916721D1
DE68916721D1 DE68916721T DE68916721T DE68916721D1 DE 68916721 D1 DE68916721 D1 DE 68916721D1 DE 68916721 T DE68916721 T DE 68916721T DE 68916721 T DE68916721 T DE 68916721T DE 68916721 D1 DE68916721 D1 DE 68916721D1
Authority
DE
Germany
Prior art keywords
protection circuit
esd protection
channel deployment
deployment
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68916721T
Other languages
English (en)
Other versions
DE68916721T2 (de
Inventor
Xiaonan Zhang
Xiaolan Wu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisys Corp
Original Assignee
Unisys Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisys Corp filed Critical Unisys Corp
Publication of DE68916721D1 publication Critical patent/DE68916721D1/de
Application granted granted Critical
Publication of DE68916721T2 publication Critical patent/DE68916721T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE68916721T 1988-01-19 1989-01-09 Esd-schutzschaltung mit kanalverarmung. Expired - Fee Related DE68916721T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/145,138 US4835653A (en) 1988-01-19 1988-01-19 ESD protection circuit employing channel depletion
PCT/US1989/000076 WO1989007332A2 (en) 1988-01-19 1989-01-09 Esd protection circuit employing channel depletion

Publications (2)

Publication Number Publication Date
DE68916721D1 true DE68916721D1 (de) 1994-08-18
DE68916721T2 DE68916721T2 (de) 1994-11-03

Family

ID=22511762

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68916721T Expired - Fee Related DE68916721T2 (de) 1988-01-19 1989-01-09 Esd-schutzschaltung mit kanalverarmung.

Country Status (6)

Country Link
US (1) US4835653A (de)
EP (1) EP0356511B1 (de)
JP (1) JPH088335B2 (de)
KR (1) KR0142340B1 (de)
DE (1) DE68916721T2 (de)
WO (1) WO1989007332A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5745323A (en) * 1995-06-30 1998-04-28 Analog Devices, Inc. Electrostatic discharge protection circuit for protecting CMOS transistors on integrated circuit processes
US5751525A (en) * 1996-01-05 1998-05-12 Analog Devices, Inc. EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages
US5917689A (en) * 1996-09-12 1999-06-29 Analog Devices, Inc. General purpose EOS/ESD protection circuit for bipolar-CMOS and CMOS integrated circuits
US5838146A (en) * 1996-11-12 1998-11-17 Analog Devices, Inc. Method and apparatus for providing ESD/EOS protection for IC power supply pins
JPH10288950A (ja) * 1997-04-14 1998-10-27 Casio Comput Co Ltd 液晶表示装置
US7579632B2 (en) * 2007-09-21 2009-08-25 Semiconductor Components Industries, L.L.C. Multi-channel ESD device and method therefor
TW201640646A (zh) * 2015-05-13 2016-11-16 Advanced Analog Technology Inc 積體電路的連接墊靜電防護元件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3395290A (en) * 1965-10-08 1968-07-30 Gen Micro Electronics Inc Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
GB1209271A (en) * 1967-02-27 1970-10-21 Hitachi Ltd Improvements in semiconductor devices
US4117587A (en) * 1973-11-30 1978-10-03 Matsushita Electronics Corporation Negative-resistance semiconductor device
US3947727A (en) * 1974-12-10 1976-03-30 Rca Corporation Protection circuit for insulated-gate field-effect transistors
JPS5530312B2 (de) * 1975-01-16 1980-08-09
US4264941A (en) * 1979-02-14 1981-04-28 National Semiconductor Corporation Protective circuit for insulated gate field effect transistor integrated circuits
US4605980A (en) * 1984-03-02 1986-08-12 Zilog, Inc. Integrated circuit high voltage protection
JPS62101067A (ja) * 1985-10-28 1987-05-11 Nec Corp 入力保護装置

Also Published As

Publication number Publication date
KR900701033A (ko) 1990-08-17
EP0356511A1 (de) 1990-03-07
US4835653A (en) 1989-05-30
DE68916721T2 (de) 1994-11-03
JPH07500698A (ja) 1995-01-19
JPH088335B2 (ja) 1996-01-29
KR0142340B1 (ko) 1998-07-15
EP0356511B1 (de) 1994-07-13
WO1989007332A3 (en) 1989-09-08
WO1989007332A2 (en) 1989-08-10

Similar Documents

Publication Publication Date Title
DE3581852D1 (de) Integrierte ueberspannungsschutzschaltung.
DE393854T1 (de) Betriebssicherer ueberspannungsableiter.
DE68924636T2 (de) Schutzschaltung gegen zeitweilig wirkende Effekte.
DE69412891T2 (de) Überspannungsschutzschaltung
DE3775174D1 (de) Blitzschutzvorrichtung.
NO890184D0 (no) Beskyttelseskontakt.
DE59005957D1 (de) Starterschutzschaltung.
DE68914536D1 (de) Festkörperschaltungs-Schutzvorrichtung.
DE69415379D1 (de) Überspannungsschutzschaltung
NO166012C (no) Beskyttelsesanordning.
FR2684816B1 (fr) Circuit de protection serie.
NO892943L (no) Beskyttelseshjelm.
DE69208205D1 (de) Schutzschaltung
DE68916721D1 (de) Esd-schutzschaltung mit kanalverarmung.
DE68911582T2 (de) Treiber-Schutzschaltung.
DE3886017D1 (de) Blitzschutzeinrichtungen.
DE69033056T2 (de) Mos-anordnung mit vollständigem esd-schutz
DE3579035D1 (de) Zuendsicherungseinrichtung.
DE68926155T2 (de) Halbleiterschaltung mit einer Überspannungsschutzschaltung
NL192708B (nl) Kortsluitbeveiliging.
DE3887873D1 (de) Phantom-esd-schutzschaltung mit e-feldverdichtung.
DE3768729D1 (de) Kurzschlussschutz.
FI840540A (fi) Skyddsanordning.
DE69204237D1 (de) Schaltkreis zum Überspannungsschutz.
DE59201093D1 (de) Luntensicherung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee