DE68914984D1 - Ladungsgekoppelte anordnung. - Google Patents

Ladungsgekoppelte anordnung.

Info

Publication number
DE68914984D1
DE68914984D1 DE68914984T DE68914984T DE68914984D1 DE 68914984 D1 DE68914984 D1 DE 68914984D1 DE 68914984 T DE68914984 T DE 68914984T DE 68914984 T DE68914984 T DE 68914984T DE 68914984 D1 DE68914984 D1 DE 68914984D1
Authority
DE
Germany
Prior art keywords
coupling arrangement
charged coupling
charged
arrangement
coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68914984T
Other languages
English (en)
Other versions
DE68914984T2 (de
Inventor
Herbert Erhardt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of DE68914984D1 publication Critical patent/DE68914984D1/de
Publication of DE68914984T2 publication Critical patent/DE68914984T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946Charge transfer devices
    • H01L29/66954Charge transfer devices with an insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833Buried channel CCD
    • H01L29/76841Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE68914984T 1988-08-29 1989-08-24 Ladungsgekoppelte anordnung. Expired - Fee Related DE68914984T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/237,029 US4910569A (en) 1988-08-29 1988-08-29 Charge-coupled device having improved transfer efficiency
PCT/US1989/003637 WO1990002417A1 (en) 1988-08-29 1989-08-24 Charge-coupled device

Publications (2)

Publication Number Publication Date
DE68914984D1 true DE68914984D1 (de) 1994-06-01
DE68914984T2 DE68914984T2 (de) 1994-11-03

Family

ID=22892059

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68914984T Expired - Fee Related DE68914984T2 (de) 1988-08-29 1989-08-24 Ladungsgekoppelte anordnung.

Country Status (5)

Country Link
US (1) US4910569A (de)
EP (1) EP0396663B1 (de)
JP (1) JP2807523B2 (de)
DE (1) DE68914984T2 (de)
WO (1) WO1990002417A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0728031B2 (ja) * 1989-02-11 1995-03-29 日本電気株式会社 電荷転送装置
EP0485125B1 (de) * 1990-11-09 1996-07-10 Matsushita Electronics Corporation Ladungsträgeranordnung, Verfahren zu ihrer Herstellung und Verfahren zu ihrer Steuerung
JPH04291887A (ja) * 1991-03-20 1992-10-15 Sony Corp 電荷転送装置
JPH04337670A (ja) * 1991-05-14 1992-11-25 Sony Corp Ccdシフトレジスタ
JPH04373274A (ja) * 1991-06-21 1992-12-25 Sony Corp Ccd固体撮像素子
JPH06140442A (ja) * 1992-10-29 1994-05-20 Matsushita Electric Ind Co Ltd 電荷転送装置
JPH06216163A (ja) * 1992-12-09 1994-08-05 Eastman Kodak Co 電荷結合素子
US5516716A (en) * 1994-12-02 1996-05-14 Eastman Kodak Company Method of making a charge coupled device with edge aligned implants and electrodes
US5556801A (en) * 1995-01-23 1996-09-17 Eastman Kodak Company Method of making a planar charge coupled device with edge aligned implants and interconnected electrodes
US5705836A (en) * 1995-05-22 1998-01-06 Dalsa, Inc. Efficient charge transfer structure in large pitch charge coupled device
US20040012689A1 (en) * 2002-07-16 2004-01-22 Fairchild Imaging Charge coupled devices in tiled arrays
US6818483B2 (en) * 2002-07-16 2004-11-16 Fairchild Imaging Large area, fast frame rate charge coupled device
US20040012688A1 (en) * 2002-07-16 2004-01-22 Fairchild Imaging Large area charge coupled device camera
US20040012684A1 (en) * 2002-07-16 2004-01-22 Fairchild Imaging Image reconstruction techniques for charge coupled devices
US7807514B2 (en) 2006-04-26 2010-10-05 Eastman Kodak Company CCD with improved charge transfer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US30917A (en) * 1860-12-18 Improvement in boilers
US3796932A (en) * 1971-06-28 1974-03-12 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3906542A (en) * 1972-06-14 1975-09-16 Bell Telephone Labor Inc Conductively connected charge coupled devices
US3767983A (en) * 1972-08-23 1973-10-23 Bell Telephone Labor Inc Charge transfer device with improved transfer efficiency
US4148132A (en) * 1974-11-27 1979-04-10 Trw Inc. Method of fabricating a two-phase charge coupled device
JPS5849035B2 (ja) * 1976-08-16 1983-11-01 株式会社東芝 電荷転送素子
JPS606101B2 (ja) * 1976-10-14 1985-02-15 ソニー株式会社 電荷転送装置の製法
US4239559A (en) * 1978-04-21 1980-12-16 Hitachi, Ltd. Method for fabricating a semiconductor device by controlled diffusion between adjacent layers
JPH07114278B2 (ja) * 1985-02-12 1995-12-06 松下電子工業株式会社 電荷転送装置の製造方法
US4613402A (en) * 1985-07-01 1986-09-23 Eastman Kodak Company Method of making edge-aligned implants and electrodes therefor

Also Published As

Publication number Publication date
JPH03501909A (ja) 1991-04-25
EP0396663B1 (de) 1994-04-27
US4910569A (en) 1990-03-20
EP0396663A1 (de) 1990-11-14
WO1990002417A1 (en) 1990-03-08
DE68914984T2 (de) 1994-11-03
JP2807523B2 (ja) 1998-10-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee