DE68908520D1 - Durch zerstaeubung abgeschiedene nickelschicht und verfahren zu deren abscheidung. - Google Patents

Durch zerstaeubung abgeschiedene nickelschicht und verfahren zu deren abscheidung.

Info

Publication number
DE68908520D1
DE68908520D1 DE8989117064T DE68908520T DE68908520D1 DE 68908520 D1 DE68908520 D1 DE 68908520D1 DE 8989117064 T DE8989117064 T DE 8989117064T DE 68908520 T DE68908520 T DE 68908520T DE 68908520 D1 DE68908520 D1 DE 68908520D1
Authority
DE
Germany
Prior art keywords
depositing
spraying
same
nickel layer
layer deposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8989117064T
Other languages
English (en)
Other versions
DE68908520T2 (de
Inventor
Ichiharu Kondo
Takao Yoneyama
Masami Yamaoka
Osamu Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Publication of DE68908520D1 publication Critical patent/DE68908520D1/de
Application granted granted Critical
Publication of DE68908520T2 publication Critical patent/DE68908520T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12889—Au-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12944—Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
DE89117064T 1988-09-15 1989-09-14 Durch Zerstäubung abgeschiedene Nickelschicht und Verfahren zu deren Abscheidung. Expired - Lifetime DE68908520T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23165388 1988-09-15
JP1183502A JPH0784647B2 (ja) 1988-09-15 1989-07-14 ニッケル膜およびそれを形成するスパッタリング方法

Publications (2)

Publication Number Publication Date
DE68908520D1 true DE68908520D1 (de) 1993-09-23
DE68908520T2 DE68908520T2 (de) 1994-02-24

Family

ID=26501916

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89117064T Expired - Lifetime DE68908520T2 (de) 1988-09-15 1989-09-14 Durch Zerstäubung abgeschiedene Nickelschicht und Verfahren zu deren Abscheidung.

Country Status (4)

Country Link
US (1) US5876861A (de)
EP (1) EP0363673B1 (de)
JP (1) JPH0784647B2 (de)
DE (1) DE68908520T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07101736B2 (ja) * 1990-06-28 1995-11-01 日本電装株式会社 半導体装置およびその製造方法
EP0523701B1 (de) * 1991-07-17 1998-01-07 Denso Corporation Verfahren zur Herstellung von Elektroden eines Halbleiterbauelements
EP0572151A3 (de) * 1992-05-28 1995-01-18 Avx Corp Varistoren mit gesputterten Anschlüssen und Methode zur Aufbringung von gesputterten Anschlüssen auf Varistoren.
US5565838A (en) * 1992-05-28 1996-10-15 Avx Corporation Varistors with sputtered terminations
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
CA2236049C (en) * 1998-04-27 2006-07-25 Computer Controlled Syringe Inc. Syringe with detachable syringe barrel
US6342114B1 (en) * 1999-03-31 2002-01-29 Praxair S.T. Technology, Inc. Nickel/vanadium sputtering target with ultra-low alpha emission
JP2003059757A (ja) * 2001-08-20 2003-02-28 Toyo Metallizing Co Ltd 電子部品用金属膜転写フィルム
JP3767585B2 (ja) * 2003-07-11 2006-04-19 株式会社デンソー 半導体装置
WO2005021826A2 (en) * 2003-08-29 2005-03-10 Northrop Grumman Corporation Titanium foil metallization product and process
KR100558006B1 (ko) * 2003-11-17 2006-03-06 삼성전자주식회사 니켈 샐리사이드 공정들 및 이를 사용하여 반도체소자를제조하는 방법들
FR2924232B1 (fr) * 2007-11-22 2009-11-27 Saint Gobain Substrat muni d'un empilement a proprietes thermiques
US9017493B2 (en) 2009-08-12 2015-04-28 Ulvac, Inc. Method of manufacturing a sputtering target and sputtering target
US20110048954A1 (en) * 2009-09-03 2011-03-03 U.S. Government As Represented By The Secretary Of The Army Enhanced solderability using a substantially pure nickel layer deposited by physical vapor deposition
JP5620096B2 (ja) * 2009-12-29 2014-11-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR102427272B1 (ko) * 2014-12-22 2022-07-29 신에쓰 가가꾸 고교 가부시끼가이샤 복합 기판, 나노카본막의 제작 방법 및 나노카본막
EP3848956A4 (de) * 2018-09-07 2021-11-03 Sumitomo Heavy Industries, Ltd. Halbleiterherstellungsverfahren und halbleiterherstellungsvorrichtung

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3461054A (en) * 1966-03-24 1969-08-12 Bell Telephone Labor Inc Cathodic sputtering from a cathodically biased target electrode having an rf potential superimposed on the cathodic bias
US3516915A (en) * 1968-05-01 1970-06-23 Bell Telephone Labor Inc Sputtering technique
US3945903A (en) * 1974-08-28 1976-03-23 Shatterproof Glass Corporation Sputter-coating of glass sheets or other substrates
US3982908A (en) * 1975-11-20 1976-09-28 Rca Corporation Nickel-gold-cobalt contact for silicon devices
JPS56142633A (en) * 1980-04-08 1981-11-07 Mitsubishi Electric Corp Forming method for back electrode of semiconductor wafer
JPS5916322A (ja) * 1983-06-27 1984-01-27 Toshiba Corp 磁性皮膜の製造方法
US4513905A (en) * 1983-07-29 1985-04-30 The Perkin-Elmer Corporation Integrated circuit metallization technique
JPS60134067A (ja) * 1983-12-19 1985-07-17 豊田合成株式会社 繊維物
US4588343A (en) * 1984-05-18 1986-05-13 Varian Associates, Inc. Workpiece lifting and holding apparatus
US4610932A (en) * 1984-12-06 1986-09-09 At&T Technologies, Inc. Electrical contacts
EP0266205B1 (de) * 1986-10-31 1993-12-15 Nippondenso Co., Ltd. Bipolarer Halbleitertransistor
JPS63290268A (ja) * 1987-05-20 1988-11-28 Fujitsu Ltd 薄膜の成長方法
EP0330122B1 (de) * 1988-02-24 1995-10-25 Siemens Aktiengesellschaft Verfahren zur Herstellung eines durch Feldeffekt steuerbaren Bipolartransistors
JPH07101736B2 (ja) * 1990-06-28 1995-11-01 日本電装株式会社 半導体装置およびその製造方法
US5361971A (en) * 1993-01-19 1994-11-08 Hughes Aircraft Company Intermediate-temperature diffusion welding

Also Published As

Publication number Publication date
EP0363673A1 (de) 1990-04-18
JPH0784647B2 (ja) 1995-09-13
JPH02167890A (ja) 1990-06-28
DE68908520T2 (de) 1994-02-24
US5876861A (en) 1999-03-02
EP0363673B1 (de) 1993-08-18

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8364 No opposition during term of opposition