DE657918T1 - Verfahren und Vorrichtung zum Einbrennen und Kühlen von Halbleiterscheiben und dergleichen. - Google Patents

Verfahren und Vorrichtung zum Einbrennen und Kühlen von Halbleiterscheiben und dergleichen.

Info

Publication number
DE657918T1
DE657918T1 DE0657918T DE94308399T DE657918T1 DE 657918 T1 DE657918 T1 DE 657918T1 DE 0657918 T DE0657918 T DE 0657918T DE 94308399 T DE94308399 T DE 94308399T DE 657918 T1 DE657918 T1 DE 657918T1
Authority
DE
Germany
Prior art keywords
gas
heating plate
introducing
flat object
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE0657918T
Other languages
German (de)
English (en)
Inventor
William T Batchelder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Systems Inc
Original Assignee
Semiconductor Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Systems Inc filed Critical Semiconductor Systems Inc
Publication of DE657918T1 publication Critical patent/DE657918T1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
DE0657918T 1993-11-12 1994-11-11 Verfahren und Vorrichtung zum Einbrennen und Kühlen von Halbleiterscheiben und dergleichen. Pending DE657918T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15203793A 1993-11-12 1993-11-12

Publications (1)

Publication Number Publication Date
DE657918T1 true DE657918T1 (de) 1996-02-29

Family

ID=22541285

Family Applications (1)

Application Number Title Priority Date Filing Date
DE0657918T Pending DE657918T1 (de) 1993-11-12 1994-11-11 Verfahren und Vorrichtung zum Einbrennen und Kühlen von Halbleiterscheiben und dergleichen.

Country Status (4)

Country Link
EP (1) EP0657918A2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH07254557A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR950015545A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE657918T1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6053982A (en) * 1995-09-01 2000-04-25 Asm America, Inc. Wafer support system
US6113702A (en) 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US6183565B1 (en) 1997-07-08 2001-02-06 Asm International N.V Method and apparatus for supporting a semiconductor wafer during processing
US6345150B1 (en) * 1999-11-30 2002-02-05 Wafermasters, Inc. Single wafer annealing oven
US6576572B2 (en) 2000-12-28 2003-06-10 Schott Lithotec Ag Method of heating a substrate using a variable surface hot plate for improved bake uniformity
US20030168174A1 (en) 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
JP2008028177A (ja) * 2006-07-21 2008-02-07 Nippon Dennetsu Co Ltd 基板加熱装置
US8092606B2 (en) 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3933423C2 (de) * 1989-10-06 1994-12-22 Nokia Deutschland Gmbh Vorrichtung zur Wärmebehandlung, insbesondere für LCD-Substratplatten
US5255153A (en) * 1990-07-20 1993-10-19 Tokyo Electron Limited Electrostatic chuck and plasma apparatus equipped therewith
TW221318B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1990-07-31 1994-02-21 Tokyo Electron Co Ltd
JPH05152201A (ja) * 1991-11-25 1993-06-18 Oki Electric Ind Co Ltd 基板加熱装置

Also Published As

Publication number Publication date
EP0657918A3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1995-07-12
KR950015545A (ko) 1995-06-17
JPH07254557A (ja) 1995-10-03
EP0657918A2 (en) 1995-06-14

Similar Documents

Publication Publication Date Title
DE69834988T2 (de) Halbleiterscheibentemperaturmessung und Kontrolle mittels Gastemperaturmessung
DE657918T1 (de) Verfahren und Vorrichtung zum Einbrennen und Kühlen von Halbleiterscheiben und dergleichen.
DE354669T1 (de) Einrichtung und verfahren zum trockenaetzen und generator zum erzeugen von wasserfreier, verduennter fluss-saeure, die dafuer benoetigt wird.
EP0327718A3 (de) Verfahren und Vorrichtung zur Temperaturbehandlung von Halbleitermaterialien
EP0811703A3 (de) Vorrichtung zum Behandeln eines Substrats
DE467624T1 (de) Vorrichtung und methode zum schuetzen der rueckseite einer scheibe waehrend der bearbeitung.
ATE4249T1 (de) Vorrichtung zum fluessigkeitstransport, verfahren zum transportieren einer fluessigkeit, verfahren zur fluessigkeitsanalyse und testelement zur verwendung bei der fluessigkeitsanalyse.
DE3217891A1 (de) Verfahren und vorrichtung zum reinigen von halbleiterplaettchen
DE3634131A1 (de) Verfahren und vorrichtung zur substrat-beheizung in einer vorrichtung zum axial symmetrischen epitaxialen abscheiden
ATE81189T1 (de) Verfahren zur reinigung eines elektronisch gesteuerten einspritzventils.
DE69017258D1 (de) Verfahren und Vorrichtung zum Erwärmen und Kühlen von Plättchen in einer Halbleiterplättchenbearbeitungseinrichtung.
EP0075175A3 (de) Verfahren und Vorrichtung zum Wärmetausch an festen Oberflächen
EP0401721A3 (de) Verfahren und Vorrichtung zum feinblasigen Begasen einer Flüssigkeit
DE68917207D1 (de) Verdampfer mit einer Vorrichtung zur Kontrolle der Strömung von Festteilchen.
DE69314465T2 (de) Vorrichtung und verfahren zur behandlung eines wafers aus halbleiter-werkstoff
DE2536446C2 (de) Vorrichtung zur Durchführung eines Verfahrens zur Bildung einer korrosionsverhütenden, oxidischen Schutzschicht auf korrosionsempfindlichen Stählen
DE4403741A1 (de) Nahbelichtungsverfahren und Einrichtung dazu
EP0299443A3 (de) Verfahren und Vorrichtung zur zerstörungsfreien Prüfung ferromagnetischer Körper mittels Magnetisierung
Gusak et al. The Kinetics of Phase Formation in the Diffusion Zone During Interdiffusion. Phase Formation in an Electrical Field
DE2529484B2 (de) Verfahren und Vorrichtung zum epitaktischen Abscheiden von Silicium auf einem Substrat
DE2738111C2 (de) Verfahren zum epitaktischen Abscheiden von Silicium auf mehreren Substraten
ATE32628T1 (de) Verfahren und vorrichtung zur kuehlung eines materials und verwendung fuer die herstellung von feuerfesten materialien durch haertung.
ATE15566T1 (de) Verfahren und vorrichtung zum ummanteln von draehten.
DE1726T1 (de) Verfahren und Vorrichtung zur Stabilisierung von Gegenständen aus Schaumkunststoff
EP0119472A2 (de) Vorrichtung zur Temperaturbehandlung von Substraten, insbesondere von Halbleiterkristallscheiben