DE60334694D1 - On-chip Diagnose-Vefahren und -Block zur Speicherreparatur mit gemischter Redundanz ("IO" Redundanz und "Word-register" Redundanz) - Google Patents

On-chip Diagnose-Vefahren und -Block zur Speicherreparatur mit gemischter Redundanz ("IO" Redundanz und "Word-register" Redundanz)

Info

Publication number
DE60334694D1
DE60334694D1 DE60334694T DE60334694T DE60334694D1 DE 60334694 D1 DE60334694 D1 DE 60334694D1 DE 60334694 T DE60334694 T DE 60334694T DE 60334694 T DE60334694 T DE 60334694T DE 60334694 D1 DE60334694 D1 DE 60334694D1
Authority
DE
Germany
Prior art keywords
redundancy
register
word
block
mixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60334694T
Other languages
English (en)
Inventor
Yannis Jallamion-Grive
Michel Collura
Jean-Christophe Vial
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of DE60334694D1 publication Critical patent/DE60334694D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/72—Masking faults in memories by using spares or by reconfiguring with optimized replacement algorithms
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/022—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in I/O circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/025—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in signal lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G11C29/4401—Indication or identification of errors, e.g. for repair for self repair
DE60334694T 2003-09-16 2003-09-16 On-chip Diagnose-Vefahren und -Block zur Speicherreparatur mit gemischter Redundanz ("IO" Redundanz und "Word-register" Redundanz) Expired - Lifetime DE60334694D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03292283A EP1517334B1 (de) 2003-09-16 2003-09-16 On-chip Diagnose-Vefahren und -Block zur Speicherreparatur mit gemischter Redundanz ("IO" Redundanz und "Word-register" Redundanz)

Publications (1)

Publication Number Publication Date
DE60334694D1 true DE60334694D1 (de) 2010-12-09

Family

ID=34178640

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60334694T Expired - Lifetime DE60334694D1 (de) 2003-09-16 2003-09-16 On-chip Diagnose-Vefahren und -Block zur Speicherreparatur mit gemischter Redundanz ("IO" Redundanz und "Word-register" Redundanz)

Country Status (3)

Country Link
US (1) US7386769B2 (de)
EP (1) EP1517334B1 (de)
DE (1) DE60334694D1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7275190B2 (en) * 2004-11-08 2007-09-25 Micron Technology, Inc. Memory block quality identification in a memory device
JP2007287272A (ja) * 2006-04-19 2007-11-01 Hitachi Ltd 冗長線所要量算出システムおよびそれを用いた不良解析方法
US7768847B2 (en) 2008-04-09 2010-08-03 Rambus Inc. Programmable memory repair scheme
US10234507B2 (en) 2016-07-20 2019-03-19 International Business Machines Corporation Implementing register array (RA) repair using LBIST
CN113435652B (zh) * 2021-07-01 2023-01-24 贵州电网有限责任公司 一种一次设备缺陷诊断与预测方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4460999A (en) * 1981-07-15 1984-07-17 Pacific Western Systems, Inc. Memory tester having memory repair analysis under pattern generator control
US4751656A (en) * 1986-03-10 1988-06-14 International Business Machines Corporation Method for choosing replacement lines in a two dimensionally redundant array
JP2842923B2 (ja) * 1990-03-19 1999-01-06 株式会社アドバンテスト 半導体メモリ試験装置
US6026505A (en) * 1991-10-16 2000-02-15 International Business Machines Corporation Method and apparatus for real time two dimensional redundancy allocation
JP3301047B2 (ja) * 1993-09-16 2002-07-15 株式会社日立製作所 半導体メモリシステム
JPH09306198A (ja) * 1996-02-07 1997-11-28 Lsi Logic Corp 冗長列及び入／出力線を備えたａｓｉｃメモリを修復するための方法
US6032264A (en) * 1997-04-22 2000-02-29 Micron Technology, Inc. Apparatus and method implementing repairs on a memory device
US5910921A (en) * 1997-04-22 1999-06-08 Micron Technology, Inc. Self-test of a memory device
JP2000195295A (ja) * 1998-12-24 2000-07-14 Advantest Corp メモリデバイス試験装置
US6141267A (en) * 1999-02-03 2000-10-31 International Business Machines Corporation Defect management engine for semiconductor memories and memory systems
JP2000235800A (ja) * 1999-02-12 2000-08-29 Mitsubishi Electric Corp 半導体記憶装置
US6304989B1 (en) * 1999-07-21 2001-10-16 Credence Systems Corporation Built-in spare row and column replacement analysis system for embedded memories
JP4230061B2 (ja) * 1999-07-21 2009-02-25 株式会社アドバンテスト 不良救済解析器を搭載したメモリ試験装置
US20020108073A1 (en) * 2001-02-02 2002-08-08 Hughes Brian William System for and method of operating a programmable column fail counter for redundancy allocation
US7003704B2 (en) * 2002-11-12 2006-02-21 International Business Machines Corporation Two-dimensional redundancy calculation
EP1465204A3 (de) 2003-02-12 2005-03-30 Infineon Technologies AG Verfahren und MBISR (Memory Built-In Self Repair) zum reparieren eines Speichers
US7188274B2 (en) * 2003-02-14 2007-03-06 Logicvision, Inc. Memory repair analysis method and circuit
US6928377B2 (en) * 2003-09-09 2005-08-09 International Business Machines Corporation Self-test architecture to implement data column redundancy in a RAM

Also Published As

Publication number Publication date
US20050091563A1 (en) 2005-04-28
US7386769B2 (en) 2008-06-10
EP1517334A1 (de) 2005-03-23
EP1517334B1 (de) 2010-10-27

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