DE60334510D1 - Hochgeschwindigkeitsverfahren zur Messung der Schwellenspannung und der Flächendotierung - Google Patents

Hochgeschwindigkeitsverfahren zur Messung der Schwellenspannung und der Flächendotierung

Info

Publication number
DE60334510D1
DE60334510D1 DE60334510T DE60334510T DE60334510D1 DE 60334510 D1 DE60334510 D1 DE 60334510D1 DE 60334510 T DE60334510 T DE 60334510T DE 60334510 T DE60334510 T DE 60334510T DE 60334510 D1 DE60334510 D1 DE 60334510D1
Authority
DE
Germany
Prior art keywords
threshold voltage
voltage
surface doping
measuring
measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60334510T
Other languages
English (en)
Inventor
William H Howland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Solid State Measurements Inc
Original Assignee
Solid State Measurements Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solid State Measurements Inc filed Critical Solid State Measurements Inc
Application granted granted Critical
Publication of DE60334510D1 publication Critical patent/DE60334510D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
DE60334510T 2002-03-15 2003-03-14 Hochgeschwindigkeitsverfahren zur Messung der Schwellenspannung und der Flächendotierung Expired - Lifetime DE60334510D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/099,207 US6657454B2 (en) 2002-03-15 2002-03-15 High speed threshold voltage and average surface doping measurements

Publications (1)

Publication Number Publication Date
DE60334510D1 true DE60334510D1 (de) 2010-11-25

Family

ID=27765442

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60334510T Expired - Lifetime DE60334510D1 (de) 2002-03-15 2003-03-14 Hochgeschwindigkeitsverfahren zur Messung der Schwellenspannung und der Flächendotierung

Country Status (6)

Country Link
US (1) US6657454B2 (de)
EP (1) EP1345032B1 (de)
JP (1) JP4729246B2 (de)
AT (1) ATE484754T1 (de)
DE (1) DE60334510D1 (de)
TW (1) TWI284378B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7190186B2 (en) * 2004-09-28 2007-03-13 Solid State Measurements, Inc. Method and apparatus for determining concentration of defects and/or impurities in a semiconductor wafer
US20070194227A1 (en) * 2006-02-13 2007-08-23 Ibis Technology Corporation Method of characterizing an ion beam
US9201112B2 (en) 2013-12-09 2015-12-01 International Business Machines Corporation Atom probe tomography sample preparation for three-dimensional (3D) semiconductor devices
US9170273B2 (en) * 2013-12-09 2015-10-27 Globalfoundries U.S. 2 Llc High frequency capacitance-voltage nanoprobing characterization

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4325025A (en) 1980-05-22 1982-04-13 International Business Machines Corporation Automated channel doping measuring circuit
JPS5775439A (en) * 1980-10-30 1982-05-12 Oki Electric Ind Co Ltd Judgement of stability of semiconductor device
US4509012A (en) * 1982-12-30 1985-04-02 Lin Shi Tron Method for determining the characteristic behavior of a metal-insulator-semiconductor device in a deep depletion mode
US4812756A (en) 1987-08-26 1989-03-14 International Business Machines Corporation Contactless technique for semicondutor wafer testing
US4891584A (en) * 1988-03-21 1990-01-02 Semitest, Inc. Apparatus for making surface photovoltage measurements of a semiconductor
JPH03185849A (ja) * 1989-12-15 1991-08-13 Sony Corp Ｃ―ｖ測定方法
US5216362A (en) 1991-10-08 1993-06-01 International Business Machines Corporation Contactless technique for measuring epitaxial dopant concentration profiles in semiconductor wafers
JPH05183036A (ja) * 1991-12-26 1993-07-23 Mitsubishi Materials Corp Ｃ−ｖ特性の測定方法
US5521525A (en) 1994-04-15 1996-05-28 University Of North Carolina Method and apparatus for measuring the doping density profile of a semiconductor layer
US5786231A (en) * 1995-12-05 1998-07-28 Sandia Corporation Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer
US5874329A (en) 1996-12-05 1999-02-23 Lsi Logic Corporation Method for artificially-inducing reverse short-channel effects in deep sub-micron CMOS devices
JP3506875B2 (ja) * 1997-03-25 2004-03-15 大日本スクリーン製造株式会社 電気特性測定装置
US6011404A (en) 1997-07-03 2000-01-04 Lucent Technologies Inc. System and method for determining near--surface lifetimes and the tunneling field of a dielectric in a semiconductor
US6197624B1 (en) 1997-08-29 2001-03-06 Semiconductor Energy Laboratory Co., Ltd. Method of adjusting the threshold voltage in an SOI CMOS
JPH11186350A (ja) * 1997-12-16 1999-07-09 Dainippon Screen Mfg Co Ltd 半導体の少数キャリアの再結合ライフタイム測定方法
US6255128B1 (en) 1998-08-06 2001-07-03 Lucent Technologies Inc. Non-contact method for determining the presence of a contaminant in a semiconductor device
US6107108A (en) 1998-08-14 2000-08-22 Taiwan Semiconductor Manufacturing Company Dosage micro uniformity measurement in ion implantation
US6111300A (en) 1998-12-01 2000-08-29 Agilent Technologies Multiple color detection elevated pin photo diode active pixel sensor
US6069485A (en) 1999-01-26 2000-05-30 Advanced Micro Devices, Inc. C-V method to extract lateral channel doping profiles of MOSFETs
JP2000269492A (ja) 1999-03-16 2000-09-29 Nec Corp 半導体装置の製造方法
US6265890B1 (en) 1999-08-26 2001-07-24 Lucent Technologies Inc. In-line non-contact depletion capacitance measurement method and apparatus

Also Published As

Publication number Publication date
ATE484754T1 (de) 2010-10-15
EP1345032A2 (de) 2003-09-17
TW200308036A (en) 2003-12-16
EP1345032A3 (de) 2004-02-11
TWI284378B (en) 2007-07-21
JP4729246B2 (ja) 2011-07-20
EP1345032B1 (de) 2010-10-13
US6657454B2 (en) 2003-12-02
JP2003273183A (ja) 2003-09-26
US20030173988A1 (en) 2003-09-18

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