DE60332341D1 - Verfahren zur Herstellung einer MIS-Leistungshalbleiteranordnung - Google Patents
Verfahren zur Herstellung einer MIS-LeistungshalbleiteranordnungInfo
- Publication number
- DE60332341D1 DE60332341D1 DE60332341T DE60332341T DE60332341D1 DE 60332341 D1 DE60332341 D1 DE 60332341D1 DE 60332341 T DE60332341 T DE 60332341T DE 60332341 T DE60332341 T DE 60332341T DE 60332341 D1 DE60332341 D1 DE 60332341D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor device
- power semiconductor
- mis power
- mis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03425526A EP1503423B1 (de) | 2003-07-31 | 2003-07-31 | Verfahren zur Herstellung einer MIS-Leistungshalbleiteranordnung |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60332341D1 true DE60332341D1 (de) | 2010-06-10 |
Family
ID=33522520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60332341T Expired - Fee Related DE60332341D1 (de) | 2003-07-31 | 2003-07-31 | Verfahren zur Herstellung einer MIS-Leistungshalbleiteranordnung |
Country Status (3)
Country | Link |
---|---|
US (1) | US7344966B2 (de) |
EP (1) | EP1503423B1 (de) |
DE (1) | DE60332341D1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ITTO20060785A1 (it) | 2006-11-02 | 2008-05-03 | St Microelectronics Srl | Dispositivo mos resistente alla radiazione ionizzante |
US20110040698A1 (en) * | 2009-08-14 | 2011-02-17 | Oracle International Corporation | Sandboxing and what-if analysis for multi-dimensional sales territories |
US8067283B2 (en) * | 2009-11-13 | 2011-11-29 | Vanguard International Semiconductor Corporation | Semiconductor device fabricating method |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5895955A (en) * | 1997-01-10 | 1999-04-20 | Advanced Micro Devices, Inc. | MOS transistor employing a removable, dual layer etch stop to protect implant regions from sidewall spacer overetch |
US6261978B1 (en) * | 1999-02-22 | 2001-07-17 | Motorola, Inc. | Process for forming semiconductor device with thick and thin films |
JP2001351989A (ja) * | 2000-06-05 | 2001-12-21 | Nec Corp | 半導体装置の製造方法 |
JP3534056B2 (ja) * | 2000-08-31 | 2004-06-07 | 日産自動車株式会社 | 炭化珪素半導体装置の製造方法 |
US6756644B2 (en) * | 2001-03-28 | 2004-06-29 | International Rectifier Corporation | Ultra low QGD power MOSFET |
EP1321985B1 (de) * | 2001-12-20 | 2007-10-24 | STMicroelectronics S.r.l. | Verfahren zur Integration von Metalloxid-Halbleiter Feldeffekttransistoren |
KR100440263B1 (ko) * | 2002-10-29 | 2004-07-15 | 주식회사 하이닉스반도체 | 반도체 소자의 트랜지스터 및 그 제조 방법 |
-
2003
- 2003-07-31 EP EP03425526A patent/EP1503423B1/de not_active Expired - Fee Related
- 2003-07-31 DE DE60332341T patent/DE60332341D1/de not_active Expired - Fee Related
-
2004
- 2004-07-29 US US10/901,920 patent/US7344966B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7344966B2 (en) | 2008-03-18 |
EP1503423B1 (de) | 2010-04-28 |
US20050059195A1 (en) | 2005-03-17 |
EP1503423A1 (de) | 2005-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60307157D1 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
DE102005014722B8 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
DE60236402D1 (de) | Verfahren zur Herstellung von Halbleitervorrichtungen | |
DE602004030082D1 (de) | Verfahren zur Herstellung einer elektronischen Vorrichtung | |
ATE447942T1 (de) | Verfahren zur herstellung einer gegen missbrauch gesicherten darreichungsform | |
DE60113574D1 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
DE60207300D1 (de) | Verfahren zur herstellung eines aerogelhaltigen isolationsgegenstandes | |
DE60327721D1 (de) | Verfahren zur Herstellung eines Halbleiterbauelements | |
DE602004006639D1 (de) | Verfahren zur herstellung einer elektrostatischen mems-einspannvorrichtung | |
ATE515500T1 (de) | Verfahren zur herstellung von telmisartan | |
DE60028912D1 (de) | Verfahren zur Herstellung von Hableitervorrichtungen | |
DE50109017D1 (de) | Verfahren zur herstellung einer elektronischen baugruppe | |
DE60134772D1 (de) | Verfahren zur herstellung thermoelektrischer umsetzer | |
ATE374463T1 (de) | Verfahren zur herstellung von oxazolidinonen | |
DE602006005052D1 (de) | Verfahren zur herstellung einer im wesentlichen schalenförmigen komponente | |
DE102004044547B8 (de) | Kühlkörper und Verfahren zur Herstellung desselben | |
DE602004019853D1 (de) | Verfahren zur Herstellung einer Alkalibatterie | |
DE60223328D1 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
DE60306893D1 (de) | Verfahren zur Herstellung einer elektrischen Speichereinrichtung mit Auswahltransistoren für Speicherelemente sowie entsprechend hergestellte Speichereinrichtung | |
ATE539067T1 (de) | Verfahren zur herstellung einer aminomethylthiazolverbindung | |
DE60327916D1 (de) | Verfahren zur Herstellung einer elektro-optischen Vorrichtung | |
DE602004020550D1 (de) | Verfahren zur Untersuchung von Halbleitern | |
DE602005025845D1 (de) | Verfahren zur Herstellung einer MOS-Leistungsanordnung | |
DE60207907D1 (de) | Verfahren zur Herstellung einer Halbleiterschaltung | |
DE60209065D1 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |