DE60328954D1 - Bildsensor mit verbesserter Uniformität der optischen Spektralantwort - Google Patents

Bildsensor mit verbesserter Uniformität der optischen Spektralantwort

Info

Publication number
DE60328954D1
DE60328954D1 DE60328954T DE60328954T DE60328954D1 DE 60328954 D1 DE60328954 D1 DE 60328954D1 DE 60328954 T DE60328954 T DE 60328954T DE 60328954 T DE60328954 T DE 60328954T DE 60328954 D1 DE60328954 D1 DE 60328954D1
Authority
DE
Germany
Prior art keywords
image sensor
optical response
improved uniformity
spectral optical
spectral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60328954T
Other languages
English (en)
Inventor
David L Losee
Stephen L Kosman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of DE60328954D1 publication Critical patent/DE60328954D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
DE60328954T 2002-11-12 2003-11-03 Bildsensor mit verbesserter Uniformität der optischen Spektralantwort Expired - Lifetime DE60328954D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/292,344 US6924472B2 (en) 2002-11-12 2002-11-12 Image sensor with improved optical response uniformity

Publications (1)

Publication Number Publication Date
DE60328954D1 true DE60328954D1 (de) 2009-10-08

Family

ID=32176156

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60328954T Expired - Lifetime DE60328954D1 (de) 2002-11-12 2003-11-03 Bildsensor mit verbesserter Uniformität der optischen Spektralantwort

Country Status (4)

Country Link
US (1) US6924472B2 (de)
EP (1) EP1420455B1 (de)
JP (1) JP4879454B2 (de)
DE (1) DE60328954D1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6940097B2 (en) * 2003-08-19 2005-09-06 Hewlett-Packard Development Company, L.P. Optical property normalization for a transparent electrical device
JP5704811B2 (ja) * 2009-12-11 2015-04-22 キヤノン株式会社 固体撮像装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4024562A (en) * 1975-05-02 1977-05-17 General Electric Company Radiation sensing and charge storage devices
US4394675A (en) * 1981-03-16 1983-07-19 Eastman Kodak Company Transparent asymmetric electrode structure for charge coupled device image sensor
JPH0671096B2 (ja) * 1985-03-13 1994-09-07 松下電器産業株式会社 受光素子
US5081421A (en) * 1990-05-01 1992-01-14 At&T Bell Laboratories In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection
KR920013735A (ko) * 1990-12-31 1992-07-29 김광호 칼라필터 및 그 제조방법
US5483090A (en) * 1993-04-09 1996-01-09 Sanyo Electric Co., Ltd. Solid-state image pickup device and method for manufacturing such device
JP2621767B2 (ja) * 1993-07-30 1997-06-18 日本電気株式会社 固体撮像素子
KR960015271B1 (ko) * 1993-08-18 1996-11-07 엘지반도체 주식회사 전하전송장치의 제조방법
US5804845A (en) * 1996-10-08 1998-09-08 Eastman Kodak Company Image sensor having ITO electrodes with an ONO layer
US5798542A (en) * 1996-10-08 1998-08-25 Eastman Kodak Company Image sensor having ITO electrodes with overlapping color filters for increased sensitivity
US6525356B1 (en) * 1998-12-15 2003-02-25 Nec Corporation Solid imaging device
US6300160B1 (en) 1999-11-18 2001-10-09 Eastman Kodak Company Process for charge coupled image sensor with U-shaped gates
US6403993B1 (en) 1999-11-18 2002-06-11 Eastman Kodak Company Charge coupled image sensor with u-shaped gates
US6489642B1 (en) * 2000-09-28 2002-12-03 Eastman Kodak Company Image sensor having improved spectral response uniformity

Also Published As

Publication number Publication date
JP4879454B2 (ja) 2012-02-22
EP1420455A2 (de) 2004-05-19
JP2004165662A (ja) 2004-06-10
US6924472B2 (en) 2005-08-02
EP1420455A3 (de) 2005-04-20
US20040089789A1 (en) 2004-05-13
EP1420455B1 (de) 2009-08-26

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