DE60323758D1 - Verfahren zur herstellung einer verpackten halbleitervorrichtung, mit solch einem verfahren erhaltene verpackte halbleitervorrichtung und zur verwendung in solch einem verfahren geeigneter metallträger - Google Patents

Verfahren zur herstellung einer verpackten halbleitervorrichtung, mit solch einem verfahren erhaltene verpackte halbleitervorrichtung und zur verwendung in solch einem verfahren geeigneter metallträger

Info

Publication number
DE60323758D1
DE60323758D1 DE60323758T DE60323758T DE60323758D1 DE 60323758 D1 DE60323758 D1 DE 60323758D1 DE 60323758 T DE60323758 T DE 60323758T DE 60323758 T DE60323758 T DE 60323758T DE 60323758 D1 DE60323758 D1 DE 60323758D1
Authority
DE
Germany
Prior art keywords
semiconductor device
metal
packaged semiconductor
diamond grains
dicing blade
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60323758T
Other languages
English (en)
Inventor
T Veld Frederik H In
Johannes H Savenije
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE60323758D1 publication Critical patent/DE60323758D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE60323758T 2002-08-05 2003-07-31 Verfahren zur herstellung einer verpackten halbleitervorrichtung, mit solch einem verfahren erhaltene verpackte halbleitervorrichtung und zur verwendung in solch einem verfahren geeigneter metallträger Expired - Lifetime DE60323758D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02078269 2002-08-05
PCT/IB2003/003712 WO2004014626A1 (en) 2002-08-05 2003-07-31 Method and apparatus for manufacturing a packaged semiconductor device, packaged semiconductor device obtained with such a method and metal carrier suitable for use in such a method

Publications (1)

Publication Number Publication Date
DE60323758D1 true DE60323758D1 (de) 2008-11-06

Family

ID=31502788

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60323758T Expired - Lifetime DE60323758D1 (de) 2002-08-05 2003-07-31 Verfahren zur herstellung einer verpackten halbleitervorrichtung, mit solch einem verfahren erhaltene verpackte halbleitervorrichtung und zur verwendung in solch einem verfahren geeigneter metallträger

Country Status (10)

Country Link
US (1) US7115443B2 (de)
EP (1) EP1549472B1 (de)
JP (1) JP2005535140A (de)
KR (1) KR20050042144A (de)
CN (1) CN100557781C (de)
AT (1) ATE409107T1 (de)
AU (1) AU2003255956A1 (de)
DE (1) DE60323758D1 (de)
TW (1) TWI310960B (de)
WO (1) WO2004014626A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7972940B2 (en) * 2007-12-28 2011-07-05 Micron Technology, Inc. Wafer processing
CN102009433B (zh) * 2010-11-03 2012-11-21 江苏省宜兴电子器件总厂 陶瓷外壳刻槽模具及用该模具加工无引线陶瓷外壳的方法
US9491867B2 (en) * 2014-09-30 2016-11-08 Ngk Spark Plug Co., Ltd. Wiring substrate and multi-piece wiring substrate

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62114254A (ja) * 1985-11-13 1987-05-26 Mitsui Haitetsuku:Kk リ−ドフレ−ムの製造方法
DE4309134C2 (de) * 1993-03-22 1999-03-04 Wilfried Wahl Verfahren zur Schmierung und Kühlung von Schneiden und/oder Werkstücken bei zerspanenden Arbeitsprozessen
US5682062A (en) * 1995-06-05 1997-10-28 Harris Corporation System for interconnecting stacked integrated circuits
US5646315A (en) * 1995-06-07 1997-07-08 National Starch And Chemical Investment Holding Corporation Polyglydicylphenyl ethers of alkyloxy chains for use in microelectronics adhesives
US6284566B1 (en) * 1996-05-17 2001-09-04 National Semiconductor Corporation Chip scale package and method for manufacture thereof
US5832585A (en) * 1996-08-13 1998-11-10 National Semiconductor Corporation Method of separating micro-devices formed on a substrate
KR100222299B1 (ko) * 1996-12-16 1999-10-01 윤종용 웨이퍼 레벨 칩 스케일 패키지 및 그의 제조 방법
KR100225909B1 (ko) 1997-05-29 1999-10-15 윤종용 웨이퍼 소잉 장치
EP0886144B1 (de) * 1997-06-19 2006-09-06 STMicroelectronics S.r.l. Hermetisch abgeschlossener Sensor mit beweglicher Mikrostruktur
SG70097A1 (en) * 1997-08-15 2000-01-25 Disio Corp Apparatus and method for machining workpieces by flushing working liquid to the tool-and-workpiece interface
TW419867B (en) * 1998-08-26 2001-01-21 Samsung Electronics Co Ltd Laser cutting apparatus and method
ATE363964T1 (de) * 1998-11-20 2007-06-15 Sankyo Diamond Ind Co Ltd Diamanttrennscheibe und deren herstellungsverfahren
JP3398721B2 (ja) * 1999-05-20 2003-04-21 アムコー テクノロジー コリア インコーポレーティド 半導体パッケージ及びその製造方法
US6413150B1 (en) 1999-05-27 2002-07-02 Texas Instruments Incorporated Dual dicing saw blade assembly and process for separating devices arrayed a substrate
US6463920B1 (en) * 1999-11-22 2002-10-15 Sumitomo Special Metals Co., Ltd. Work cutting apparatus and work cutting method
US6400004B1 (en) * 2000-08-17 2002-06-04 Advanced Semiconductor Engineering, Inc. Leadless semiconductor package
US6467278B1 (en) * 2000-11-15 2002-10-22 National Semiconductor Corporation Cooling for singulation of composite materials in molded semiconductor packages
JP3619773B2 (ja) * 2000-12-20 2005-02-16 株式会社ルネサステクノロジ 半導体装置の製造方法
JP3628971B2 (ja) 2001-02-15 2005-03-16 松下電器産業株式会社 リードフレーム及びそれを用いた樹脂封止型半導体装置の製造方法
WO2002103792A2 (en) * 2001-06-19 2002-12-27 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device and semiconductor device
US6849523B2 (en) * 2003-03-12 2005-02-01 Taiwan Semiconductor Manufacturing Co., Ltd Process for separating dies on a wafer

Also Published As

Publication number Publication date
ATE409107T1 (de) 2008-10-15
US20050255630A1 (en) 2005-11-17
WO2004014626A1 (en) 2004-02-19
AU2003255956A1 (en) 2004-02-25
EP1549472B1 (de) 2008-09-24
JP2005535140A (ja) 2005-11-17
CN100557781C (zh) 2009-11-04
CN1675041A (zh) 2005-09-28
KR20050042144A (ko) 2005-05-04
TW200416776A (en) 2004-09-01
TWI310960B (en) 2009-06-11
US7115443B2 (en) 2006-10-03
EP1549472A1 (de) 2005-07-06

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