DE60322144D1 - Verfahren und Vorrichtung zum chemisch-mechanischen Polieren - Google Patents

Verfahren und Vorrichtung zum chemisch-mechanischen Polieren

Info

Publication number
DE60322144D1
DE60322144D1 DE60322144T DE60322144T DE60322144D1 DE 60322144 D1 DE60322144 D1 DE 60322144D1 DE 60322144 T DE60322144 T DE 60322144T DE 60322144 T DE60322144 T DE 60322144T DE 60322144 D1 DE60322144 D1 DE 60322144D1
Authority
DE
Germany
Prior art keywords
mechanical polishing
chemical mechanical
polishing
chemical
mechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60322144T
Other languages
English (en)
Inventor
Toshiro Doi
Takashi Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DOI, TOSHIRO, FUKUOKA-SHI, JP
Tokyo Seimitsu Co Ltd
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Application granted granted Critical
Publication of DE60322144D1 publication Critical patent/DE60322144D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
DE60322144T 2002-05-17 2003-05-16 Verfahren und Vorrichtung zum chemisch-mechanischen Polieren Expired - Fee Related DE60322144D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002142632A JP2003332274A (ja) 2002-05-17 2002-05-17 化学的機械研磨方法及び化学的機械研磨装置

Publications (1)

Publication Number Publication Date
DE60322144D1 true DE60322144D1 (de) 2008-08-28

Family

ID=29267831

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60322144T Expired - Fee Related DE60322144D1 (de) 2002-05-17 2003-05-16 Verfahren und Vorrichtung zum chemisch-mechanischen Polieren

Country Status (6)

Country Link
US (2) US6969308B2 (de)
EP (1) EP1362670B8 (de)
JP (1) JP2003332274A (de)
KR (1) KR20030089508A (de)
DE (1) DE60322144D1 (de)
TW (1) TWI258815B (de)

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EP2148922B1 (de) * 2007-04-13 2020-03-04 Terumo BCT, Inc. Zellexpansionssystem und verfahren zu seiner verwendung
US20110104997A1 (en) * 2009-11-03 2011-05-05 Jeong In-Kwon Apparatuses and methods for polishing and cleaning semiconductor wafers
EP2566951B1 (de) 2010-05-05 2020-03-04 Terumo BCT, Inc. Verfahren zur neuaussaat von in einem hohlfaser-bioreaktorsystem gezüchteten adhärenten zellen
EP2625577B1 (de) 2010-10-08 2019-06-26 Terumo BCT, Inc. Anpassbares verfahren und systeme für züchtung und ernte von zellen in einem hohlfaser-bioreaktorsystem
US9175259B2 (en) 2012-08-20 2015-11-03 Terumo Bct, Inc. Method of loading and distributing cells in a bioreactor of a cell expansion system
JP5927129B2 (ja) * 2013-01-31 2016-05-25 株式会社荏原製作所 研磨装置
US10513006B2 (en) * 2013-02-04 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. High throughput CMP platform
WO2015073913A1 (en) 2013-11-16 2015-05-21 Terumo Bct, Inc. Expanding cells in a bioreactor
EP3122866B1 (de) 2014-03-25 2019-11-20 Terumo BCT, Inc. Passives ersetzen von medien
WO2015164808A1 (en) 2014-04-24 2015-10-29 Terumo Bct, Inc. Measuring flow rate
US20160090569A1 (en) 2014-09-26 2016-03-31 Terumo Bct, Inc. Scheduled Feed
KR101913702B1 (ko) * 2015-03-27 2018-11-01 주식회사 케이씨텍 화학 기계적 연마 장치
WO2017004592A1 (en) 2015-07-02 2017-01-05 Terumo Bct, Inc. Cell growth with mechanical stimuli
CN105483815B (zh) * 2015-12-18 2018-02-23 上海集成电路研发中心有限公司 一种电化学抛光装置及使用该装置的电化学抛光方法
US11685883B2 (en) 2016-06-07 2023-06-27 Terumo Bct, Inc. Methods and systems for coating a cell growth surface
US11104874B2 (en) 2016-06-07 2021-08-31 Terumo Bct, Inc. Coating a bioreactor
JP7393945B2 (ja) 2017-03-31 2023-12-07 テルモ ビーシーティー、インコーポレーテッド 細胞増殖
US11624046B2 (en) 2017-03-31 2023-04-11 Terumo Bct, Inc. Cell expansion
US10879077B2 (en) * 2017-10-30 2020-12-29 Taiwan Semiconductor Manufacturing Company Ltd. Planarization apparatus and planarization method thereof
CN109732472A (zh) * 2017-10-31 2019-05-10 上海新昇半导体科技有限公司 抛光设备及方法
CN112959010B (zh) * 2021-02-18 2022-07-15 宁波江丰电子材料股份有限公司 一种靶材与铜背板的装配方法

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WO1999026758A1 (en) * 1997-11-25 1999-06-03 John Hopkins University Electrochemical-control of abrasive polishing and machining rates
JPH11307481A (ja) * 1998-04-24 1999-11-05 Sony Corp 電解めっき装置および電解めっき方法
JP2000058521A (ja) * 1998-08-08 2000-02-25 Tokyo Electron Ltd プラズマ研磨装置
JP2000306874A (ja) * 1999-04-23 2000-11-02 Sony Corp 研磨装置および研磨方法
JP4513145B2 (ja) * 1999-09-07 2010-07-28 ソニー株式会社 半導体装置の製造方法および研磨方法
US6368190B1 (en) 2000-01-26 2002-04-09 Agere Systems Guardian Corp. Electrochemical mechanical planarization apparatus and method
US6478936B1 (en) * 2000-05-11 2002-11-12 Nutool Inc. Anode assembly for plating and planarizing a conductive layer
KR100470137B1 (ko) 2000-08-23 2005-02-04 주식회사 에프에스티 냉각 패드를 구비하는 연마 장치 및 이를 이용한 연마 방법
US6580053B1 (en) * 2000-08-31 2003-06-17 Sharp Laboratories Of America, Inc. Apparatus to control the amount of oxygen incorporated into polycrystalline silicon film during excimer laser processing of silicon films
JP4644926B2 (ja) * 2000-10-13 2011-03-09 ソニー株式会社 半導体製造装置および半導体装置の製造方法
WO2002047139A2 (en) * 2000-12-04 2002-06-13 Ebara Corporation Methode of forming a copper film on a substrate
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DE10229000A1 (de) * 2002-06-28 2004-01-29 Advanced Micro Devices, Inc., Sunnyvale Vorrichtung und Verfahren zum Reduzieren der Oxidation von polierten Metalloberflächen in einem chemisch-mechanischen Poliervorgang
DE10228998B4 (de) * 2002-06-28 2004-05-13 Advanced Micro Devices, Inc., Sunnyvale Vorrichtung und Verfahren zum elektrochemischen Behandeln eines Substrats bei reduzierter Metallkorrosion
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US7189146B2 (en) * 2003-03-27 2007-03-13 Asm Nutool, Inc. Method for reduction of defects in wet processed layers

Also Published As

Publication number Publication date
US6969308B2 (en) 2005-11-29
US20040009738A1 (en) 2004-01-15
TWI258815B (en) 2006-07-21
EP1362670A2 (de) 2003-11-19
EP1362670B8 (de) 2009-11-04
TW200308010A (en) 2003-12-16
KR20030089508A (ko) 2003-11-21
US7785175B2 (en) 2010-08-31
JP2003332274A (ja) 2003-11-21
EP1362670B1 (de) 2008-07-16
EP1362670A3 (de) 2005-03-02
US20050205433A1 (en) 2005-09-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: DOI, TOSHIRO, FUKUOKA-SHI, JP

Owner name: TOKYO SEIMITSU CO. LTD., MITAKA-SHI, TOKIO/TOK, JP

8339 Ceased/non-payment of the annual fee