DE60308946D1 - Polierkissen und Verfahren zur Herstellung eines Polierkissens - Google Patents

Polierkissen und Verfahren zur Herstellung eines Polierkissens

Info

Publication number
DE60308946D1
DE60308946D1 DE60308946T DE60308946T DE60308946D1 DE 60308946 D1 DE60308946 D1 DE 60308946D1 DE 60308946 T DE60308946 T DE 60308946T DE 60308946 T DE60308946 T DE 60308946T DE 60308946 D1 DE60308946 D1 DE 60308946D1
Authority
DE
Germany
Prior art keywords
polishing pad
making
polishing
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60308946T
Other languages
English (en)
Other versions
DE60308946T2 (de
Inventor
Nobuo Kawahashi
Kuo Hasegawa
Hiroshi Shiho
Tomoo Koumura
Kouji Kawahara
Yukio Hosaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002162142A external-priority patent/JP3849582B2/ja
Priority claimed from JP2002191403A external-priority patent/JP3849594B2/ja
Priority claimed from JP2002191401A external-priority patent/JP3867629B2/ja
Priority claimed from JP2002191402A external-priority patent/JP3849593B2/ja
Application filed by JSR Corp filed Critical JSR Corp
Publication of DE60308946D1 publication Critical patent/DE60308946D1/de
Application granted granted Critical
Publication of DE60308946T2 publication Critical patent/DE60308946T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE60308946T 2002-06-03 2003-06-02 Polierkissen und Verfahren zur Herstellung eines Polierkissens Expired - Lifetime DE60308946T2 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2002162142A JP3849582B2 (ja) 2002-06-03 2002-06-03 研磨パッド及び複層型研磨パッド
JP2002162142 2002-06-03
JP2002191402 2002-06-28
JP2002191401 2002-06-28
JP2002191403 2002-06-28
JP2002191403A JP3849594B2 (ja) 2002-06-28 2002-06-28 研磨パッド
JP2002191401A JP3867629B2 (ja) 2002-06-28 2002-06-28 研磨パッド及び複層型研磨パッド
JP2002191402A JP3849593B2 (ja) 2002-06-28 2002-06-28 研磨パッド及び複層型研磨パッド

Publications (2)

Publication Number Publication Date
DE60308946D1 true DE60308946D1 (de) 2006-11-23
DE60308946T2 DE60308946T2 (de) 2007-05-10

Family

ID=29554351

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60308946T Expired - Lifetime DE60308946T2 (de) 2002-06-03 2003-06-02 Polierkissen und Verfahren zur Herstellung eines Polierkissens

Country Status (6)

Country Link
US (1) US20040014413A1 (de)
EP (1) EP1369204B1 (de)
KR (1) KR100669301B1 (de)
CN (1) CN100492597C (de)
DE (1) DE60308946T2 (de)
TW (1) TWI250572B (de)

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US9278424B2 (en) 2003-03-25 2016-03-08 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US8864859B2 (en) 2003-03-25 2014-10-21 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
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US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
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DE602005007125D1 (de) * 2004-09-17 2008-07-10 Jsr Corp Chemisch-mechanisches Polierkissen und chemisch-mechanisches Polierverfahren
JP3769581B1 (ja) * 2005-05-18 2006-04-26 東洋ゴム工業株式会社 研磨パッドおよびその製造方法
KR100721196B1 (ko) * 2005-05-24 2007-05-23 주식회사 하이닉스반도체 연마패드 및 이를 이용한 화학적기계적연마장치
US20070111644A1 (en) * 2005-09-27 2007-05-17 Spencer Preston Thick perforated polishing pad and method for making same
JP5186738B2 (ja) * 2006-07-10 2013-04-24 富士通セミコンダクター株式会社 研磨パッドの製造方法及び被研磨体の研磨方法
TWI409136B (zh) 2006-07-19 2013-09-21 Innopad Inc 表面具微溝槽之化學機械平坦化墊
US20080146129A1 (en) * 2006-12-08 2008-06-19 Makoto Kouzuma Fast break-in polishing pad and a method of making the same
JP2008290197A (ja) * 2007-05-25 2008-12-04 Nihon Micro Coating Co Ltd 研磨パッド及び方法
TWI455795B (zh) * 2007-10-18 2014-10-11 Iv Technologies Co Ltd 研磨墊及研磨方法
CN101422882B (zh) * 2007-10-31 2015-05-20 智胜科技股份有限公司 研磨垫及研磨方法
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TWI449597B (zh) * 2008-07-09 2014-08-21 Iv Technologies Co Ltd 研磨墊及其製造方法
TWM352127U (en) * 2008-08-29 2009-03-01 Bestac Advanced Material Co Ltd Polishing pad
TWM352126U (en) * 2008-10-23 2009-03-01 Bestac Advanced Material Co Ltd Polishing pad
DE102009005254B4 (de) * 2009-01-14 2017-12-07 Scholl Concepts Gmbh Polierscheibe zur polierenden Bearbeitung von lackierten Oberflächen
SG10201404152UA (en) * 2009-07-16 2014-09-26 Cabot Microelectronics Corp Grooved cmp polishing pad
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KR100968197B1 (ko) * 2010-05-04 2010-07-06 (주)무림설계기술단 광통신케이블 보호용 접속단자 케이스
CN101982303B (zh) * 2010-10-11 2012-01-25 南京航空航天大学 开槽型冰冻固结磨料抛光垫及其制备方法
US9211628B2 (en) 2011-01-26 2015-12-15 Nexplanar Corporation Polishing pad with concentric or approximately concentric polygon groove pattern
DE102011082777A1 (de) * 2011-09-15 2012-02-09 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
US20140024299A1 (en) * 2012-07-19 2014-01-23 Wen-Chiang Tu Polishing Pad and Multi-Head Polishing System
CN103029035B (zh) * 2012-11-28 2015-02-11 上海华力微电子有限公司 一种研磨垫及利用该研磨垫进行研磨时的损耗检测方法
CN103909466B (zh) * 2012-12-31 2016-06-22 中芯国际集成电路制造(上海)有限公司 多垫式化学机械研磨装置
TWI599447B (zh) * 2013-10-18 2017-09-21 卡博特微電子公司 具有偏移同心溝槽圖樣之邊緣排除區的cmp拋光墊
US9314897B2 (en) * 2014-04-29 2016-04-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
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TWI597125B (zh) 2014-09-25 2017-09-01 三芳化學工業股份有限公司 拋光墊及其製造方法
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
KR102295988B1 (ko) 2014-10-17 2021-09-01 어플라이드 머티어리얼스, 인코포레이티드 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
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CN104400623A (zh) * 2014-12-11 2015-03-11 烟台艾迪液压科技有限公司 用于超精密研磨加工的阿基米德螺旋纹研磨盘
TWI549781B (zh) * 2015-08-07 2016-09-21 智勝科技股份有限公司 研磨墊、研磨系統及研磨方法
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TW201716182A (zh) * 2015-11-03 2017-05-16 力晶科技股份有限公司 30078 新竹科學工業園區力行一路12號 研磨裝置與研磨方法
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JP6979030B2 (ja) * 2016-03-24 2021-12-08 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated 化学機械研磨のためのテクスチャード加工された小型パッド
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Also Published As

Publication number Publication date
TW200402098A (en) 2004-02-01
TWI250572B (en) 2006-03-01
EP1369204A1 (de) 2003-12-10
EP1369204B1 (de) 2006-10-11
DE60308946T2 (de) 2007-05-10
CN1494983A (zh) 2004-05-12
KR100669301B1 (ko) 2007-01-16
US20040014413A1 (en) 2004-01-22
CN100492597C (zh) 2009-05-27
KR20030094084A (ko) 2003-12-11

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