DE60237034D1 - Halbleiterbauelemente mit gräben und deren herstellungsverfahren - Google Patents

Halbleiterbauelemente mit gräben und deren herstellungsverfahren

Info

Publication number
DE60237034D1
DE60237034D1 DE60237034T DE60237034T DE60237034D1 DE 60237034 D1 DE60237034 D1 DE 60237034D1 DE 60237034 T DE60237034 T DE 60237034T DE 60237034 T DE60237034 T DE 60237034T DE 60237034 D1 DE60237034 D1 DE 60237034D1
Authority
DE
Germany
Prior art keywords
trench
grates
manufacturing
electrode
semiconductor components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60237034T
Other languages
English (en)
Inventor
Erwin A Hijzen
T Zandt Michael A In
Raymond J Hueting
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE60237034D1 publication Critical patent/DE60237034D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE60237034T 2001-12-08 2002-11-21 Halbleiterbauelemente mit gräben und deren herstellungsverfahren Expired - Lifetime DE60237034D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0129450.3A GB0129450D0 (en) 2001-12-08 2001-12-08 Trenched semiconductor devices and their manufacture
PCT/IB2002/004962 WO2003050879A1 (en) 2001-12-08 2002-11-21 Trenched semiconductor devices and their manufacture

Publications (1)

Publication Number Publication Date
DE60237034D1 true DE60237034D1 (de) 2010-08-26

Family

ID=9927283

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60237034T Expired - Lifetime DE60237034D1 (de) 2001-12-08 2002-11-21 Halbleiterbauelemente mit gräben und deren herstellungsverfahren

Country Status (10)

Country Link
US (2) US6956264B2 (de)
EP (1) EP1459386B1 (de)
JP (2) JP4804715B2 (de)
KR (1) KR20040068203A (de)
CN (1) CN1333466C (de)
AT (1) ATE474328T1 (de)
AU (1) AU2002347500A1 (de)
DE (1) DE60237034D1 (de)
GB (1) GB0129450D0 (de)
WO (1) WO2003050879A1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001090417A2 (en) * 2000-05-19 2001-11-29 Eragen Biosciences, Inc. Materials and methods for detection of nucleic acids
JP4068597B2 (ja) * 2004-07-08 2008-03-26 株式会社東芝 半導体装置
JP2006066611A (ja) * 2004-08-26 2006-03-09 Toshiba Corp 半導体装置
DE102005008354B4 (de) * 2005-02-23 2007-12-27 Infineon Technologies Austria Ag Halbleiterbauteil sowie Verfahren zu dessen Herstellung
JP2007035841A (ja) * 2005-07-26 2007-02-08 Toshiba Corp 半導体装置
US7633119B2 (en) * 2006-02-17 2009-12-15 Alpha & Omega Semiconductor, Ltd Shielded gate trench (SGT) MOSFET devices and manufacturing processes
US8159024B2 (en) * 2007-04-20 2012-04-17 Rensselaer Polytechnic Institute High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance
US20100013009A1 (en) * 2007-12-14 2010-01-21 James Pan Structure and Method for Forming Trench Gate Transistors with Low Gate Resistance
US7956411B2 (en) 2008-01-15 2011-06-07 Fairchild Semiconductor Corporation High aspect ratio trench structures with void-free fill material
US7745845B2 (en) * 2008-04-23 2010-06-29 Fairchild Semiconductor Corporation Integrated low leakage schottky diode
US7919388B2 (en) * 2008-05-30 2011-04-05 Freescale Semiconductor, Inc. Methods for fabricating semiconductor devices having reduced gate-drain capacitance
US7838389B2 (en) * 2008-05-30 2010-11-23 Freescale Semiconductor, Inc. Enclosed void cavity for low dielectric constant insulator
US20090309181A1 (en) * 2008-06-12 2009-12-17 Force Mos Technology Co. Ltd. Trench schottky with multiple epi structure
US8664713B2 (en) 2008-12-31 2014-03-04 Stmicroelectronics S.R.L. Integrated power device on a semiconductor substrate having an improved trench gate structure
US20110062489A1 (en) * 2009-09-11 2011-03-17 Disney Donald R Power device with self-aligned silicide contact
JP2011055017A (ja) * 2010-12-17 2011-03-17 Toshiba Corp 半導体装置
JP5059989B1 (ja) * 2011-06-28 2012-10-31 パナソニック株式会社 半導体装置とその製造方法
WO2013001677A1 (ja) * 2011-06-28 2013-01-03 パナソニック株式会社 半導体装置とその製造方法
US8907408B2 (en) 2012-03-26 2014-12-09 Infineon Technologies Austria Ag Stress-reduced field-effect semiconductor device and method for forming therefor
JP6112700B2 (ja) * 2012-08-17 2017-04-12 ローム株式会社 半導体装置
US20140101776A1 (en) * 2012-10-10 2014-04-10 Red.Com, Inc. Digital Asset Distribution Media
KR101847630B1 (ko) 2013-04-01 2018-05-24 삼성전자주식회사 반도체 소자 및 반도체 모듈
CN104409358A (zh) * 2014-12-02 2015-03-11 张家港凯思半导体有限公司 一种沟槽型半导体器件中的沟槽的制造方法
JP6301882B2 (ja) * 2015-08-21 2018-03-28 トヨタ自動車株式会社 半導体装置の製造方法と半導体装置
JP6426642B2 (ja) * 2016-03-08 2018-11-21 株式会社東芝 半導体装置
US9911804B1 (en) * 2016-08-22 2018-03-06 International Business Machines Corporation Vertical fin field effect transistor with air gap spacers
FR3055742B1 (fr) * 2016-09-06 2019-12-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Guide d'ondes millimetriques
JP7106476B2 (ja) * 2019-03-19 2022-07-26 株式会社東芝 半導体装置およびその製造方法
JP7249269B2 (ja) * 2019-12-27 2023-03-30 株式会社東芝 半導体装置およびその製造方法
CN111785627B (zh) * 2020-06-28 2023-03-14 上海华虹宏力半导体制造有限公司 具有沟槽栅的igbt器件的制造方法
JP7337756B2 (ja) 2020-07-30 2023-09-04 株式会社東芝 半導体装置
JP7474214B2 (ja) 2021-03-17 2024-04-24 株式会社東芝 半導体装置
TWI809577B (zh) * 2021-11-26 2023-07-21 帥群微電子股份有限公司 溝槽式功率半導體元件及其製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5254369A (en) * 1975-10-29 1977-05-02 Mitsubishi Electric Corp Schottky barrier semiconductor device
JPS625643A (ja) * 1985-07-01 1987-01-12 Nec Corp 半導体集積回路
US5250450A (en) * 1991-04-08 1993-10-05 Micron Technology, Inc. Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance
US5637898A (en) * 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
US5612567A (en) * 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same
JP3085231B2 (ja) * 1997-02-20 2000-09-04 日本電気株式会社 半導体装置の製造方法
JP2882395B2 (ja) * 1997-03-24 1999-04-12 日本電気株式会社 半導体集積回路装置及びその製造方法
US6495900B1 (en) * 1997-11-12 2002-12-17 Micron Technology, Inc. Insulator for electrical structure
US6130151A (en) * 1999-05-07 2000-10-10 Taiwan Semiconductor Manufacturing Company Method of manufacturing air gap in multilevel interconnection
US6291298B1 (en) * 1999-05-25 2001-09-18 Advanced Analogic Technologies, Inc. Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses
GB9917099D0 (en) * 1999-07-22 1999-09-22 Koninkl Philips Electronics Nv Cellular trench-gate field-effect transistors
GB0002235D0 (en) * 2000-02-02 2000-03-22 Koninkl Philips Electronics Nv Trenched schottky rectifiers
DE10004984A1 (de) * 2000-02-04 2001-08-16 Infineon Technologies Ag Vertikales Halbleiterbauelement mit Source-Down-Design und entsprechendes Herstellungsverfahren
US6413827B2 (en) * 2000-02-14 2002-07-02 Paul A. Farrar Low dielectric constant shallow trench isolation
DE10014660C2 (de) * 2000-03-24 2002-08-29 Infineon Technologies Ag Halbleiteranordnung mit einer durch einen Hohlraum von einer Driftstrecke getrennten Trenchelektrode
JP2001274397A (ja) * 2000-03-27 2001-10-05 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置およびその製造方法
TW508758B (en) * 2001-07-23 2002-11-01 Promos Technologies Inc Manufacturing method of deep trench capacitor

Also Published As

Publication number Publication date
JP2011187970A (ja) 2011-09-22
EP1459386B1 (de) 2010-07-14
JP4804715B2 (ja) 2011-11-02
JP2005512342A (ja) 2005-04-28
US7033889B2 (en) 2006-04-25
CN1599959A (zh) 2005-03-23
EP1459386A1 (de) 2004-09-22
AU2002347500A1 (en) 2003-06-23
US20060008991A1 (en) 2006-01-12
US20030146470A1 (en) 2003-08-07
ATE474328T1 (de) 2010-07-15
WO2003050879A1 (en) 2003-06-19
US6956264B2 (en) 2005-10-18
GB0129450D0 (en) 2002-01-30
CN1333466C (zh) 2007-08-22
KR20040068203A (ko) 2004-07-30

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