DE60233612D1 - Strahlungsdetektoren und Verfahren zu ihrer Herstellung - Google Patents
Strahlungsdetektoren und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE60233612D1 DE60233612D1 DE60233612T DE60233612T DE60233612D1 DE 60233612 D1 DE60233612 D1 DE 60233612D1 DE 60233612 T DE60233612 T DE 60233612T DE 60233612 T DE60233612 T DE 60233612T DE 60233612 D1 DE60233612 D1 DE 60233612D1
- Authority
- DE
- Germany
- Prior art keywords
- preparation
- radiation detectors
- detectors
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
- G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0103820A FR2822541B1 (fr) | 2001-03-21 | 2001-03-21 | Procedes et dispositifs de fabrication de detecteurs de rayonnement |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60233612D1 true DE60233612D1 (de) | 2009-10-22 |
Family
ID=8861384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60233612T Expired - Lifetime DE60233612D1 (de) | 2001-03-21 | 2002-03-20 | Strahlungsdetektoren und Verfahren zu ihrer Herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6753526B2 (de) |
EP (1) | EP1243903B1 (de) |
DE (1) | DE60233612D1 (de) |
FR (1) | FR2822541B1 (de) |
Families Citing this family (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6674562B1 (en) | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
US8928967B2 (en) | 1998-04-08 | 2015-01-06 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
WO1999052006A2 (en) | 1998-04-08 | 1999-10-14 | Etalon, Inc. | Interferometric modulation of radiation |
IES20010552A2 (en) * | 2001-06-11 | 2002-05-15 | Nat Microelectronic Res Ct | Microelectronic device and method of its manufacture |
JP2003106895A (ja) * | 2001-10-01 | 2003-04-09 | Nec Corp | 熱型赤外線検出素子及びその製造方法 |
US6998613B2 (en) * | 2003-04-22 | 2006-02-14 | Raytheon Company | Integrated spectroscopic microbolometer with microfilter arrays |
US7084010B1 (en) | 2003-10-17 | 2006-08-01 | Raytheon Company | Integrated package design and method for a radiation sensing device |
FR2867273B1 (fr) * | 2004-03-04 | 2006-09-08 | Commissariat Energie Atomique | Procede de realisation d'un dispositif pour la detection thermique d'un rayonnement comportant un microbolometre actif et un microbolometre passif |
FR2874691B1 (fr) * | 2004-08-24 | 2006-11-17 | Ulis Soc Par Actions Simplifie | Composant de detection de rayonnements electromagnetiques, et notamment infrarouge, bloc optique d'imagerie infrarouge integrant un tel composant et procede pour sa realisation |
US7808703B2 (en) | 2004-09-27 | 2010-10-05 | Qualcomm Mems Technologies, Inc. | System and method for implementation of interferometric modulator displays |
US7920135B2 (en) | 2004-09-27 | 2011-04-05 | Qualcomm Mems Technologies, Inc. | Method and system for driving a bi-stable display |
US7653371B2 (en) | 2004-09-27 | 2010-01-26 | Qualcomm Mems Technologies, Inc. | Selectable capacitance circuit |
US7583429B2 (en) | 2004-09-27 | 2009-09-01 | Idc, Llc | Ornamental display device |
US7692148B2 (en) * | 2005-01-26 | 2010-04-06 | Analog Devices, Inc. | Thermal sensor with thermal barrier |
US7435964B2 (en) * | 2005-01-26 | 2008-10-14 | Analog Devices, Inc. | Thermal sensor with increased sensitivity |
US7718967B2 (en) * | 2005-01-26 | 2010-05-18 | Analog Devices, Inc. | Die temperature sensors |
US7326932B2 (en) * | 2005-01-26 | 2008-02-05 | Analog Devices, Inc. | Sensor and cap arrangement |
US7807972B2 (en) * | 2005-01-26 | 2010-10-05 | Analog Devices, Inc. | Radiation sensor with cap and optical elements |
US8487260B2 (en) * | 2005-01-26 | 2013-07-16 | Analog Devices, Inc. | Sensor |
US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
JP2007210083A (ja) * | 2006-02-13 | 2007-08-23 | Hitachi Ltd | Mems素子及びその製造方法 |
US7470904B1 (en) * | 2006-03-20 | 2008-12-30 | Flir Systems, Inc. | Infrared camera packaging |
US7903047B2 (en) | 2006-04-17 | 2011-03-08 | Qualcomm Mems Technologies, Inc. | Mode indicator for interferometric modulator displays |
US7629582B2 (en) * | 2006-10-24 | 2009-12-08 | Raytheon Company | Dual band imager with visible or SWIR detectors combined with uncooled LWIR detectors |
WO2008085779A1 (en) * | 2007-01-05 | 2008-07-17 | Miradia Inc. | Methods and systems for wafer level packaging of mems structures |
US7622717B2 (en) | 2007-08-22 | 2009-11-24 | Drs Sensors & Targeting Systems, Inc. | Pixel structure having an umbrella type absorber with one or more recesses or channels sized to increase radiation absorption |
WO2009048895A2 (en) * | 2007-10-07 | 2009-04-16 | Jordan Scott | Portable device for detecting food allergens |
JP4665959B2 (ja) * | 2007-11-30 | 2011-04-06 | 日本電気株式会社 | 真空パッケージ |
US8523427B2 (en) | 2008-02-27 | 2013-09-03 | Analog Devices, Inc. | Sensor device with improved sensitivity to temperature variation in a semiconductor substrate |
FR2933390B1 (fr) | 2008-07-01 | 2010-09-03 | Commissariat Energie Atomique | Procede d'encapsulation d'un dispositif microelectronique par un materiau getter |
FR2936868B1 (fr) * | 2008-10-07 | 2011-02-18 | Ulis | Detecteur thermique a micro-encapsulation. |
FR2941297B1 (fr) * | 2009-01-19 | 2011-02-11 | Commissariat Energie Atomique | Procede de fabrication d'un detecteur bolometrique |
FR2946777B1 (fr) * | 2009-06-12 | 2011-07-22 | Commissariat Energie Atomique | Dispositif de detection et/ou d'emission de rayonnement electromagnetique et procede de fabrication d'un tel dispositif |
TWI396242B (zh) * | 2009-08-11 | 2013-05-11 | Pixart Imaging Inc | 微電子裝置、微電子裝置的製造方法、微機電封裝結構及其封裝方法 |
US8247253B2 (en) | 2009-08-11 | 2012-08-21 | Pixart Imaging Inc. | MEMS package structure and method for fabricating the same |
WO2011028504A2 (en) | 2009-08-24 | 2011-03-10 | Cavendish Kinetics, Inc. | Fabrication of a floating rocker mems device for light modulation |
CN104326436B (zh) * | 2009-09-02 | 2017-05-31 | 原相科技股份有限公司 | 微电子装置及制造方法、微机电封装结构及封装方法 |
CN102001613B (zh) * | 2009-09-02 | 2014-10-22 | 原相科技股份有限公司 | 微电子装置及制造方法、微机电封装结构及封装方法 |
EP2407418A3 (de) * | 2010-07-15 | 2014-04-09 | IMEC vzw | MEMS-Vorrichtung mit einem hermetisch versiegelten Hohlraum und und damit erhaltene Vorrichtungen |
FR2966595B1 (fr) | 2010-10-26 | 2013-01-25 | Commissariat Energie Atomique | Dispositif de detection d'un rayonnement electromagnetique. |
FR2969284B1 (fr) * | 2010-12-17 | 2012-12-14 | Commissariat Energie Atomique | Detecteur infrarouge a base de micro-planches bolometriques suspendues |
FR2982073B1 (fr) * | 2011-10-28 | 2014-10-10 | Commissariat Energie Atomique | Structure d'encapsulation hermetique d'un dispositif et d'un composant electronique |
FR2983297B1 (fr) | 2011-11-29 | 2015-07-17 | Commissariat Energie Atomique | Detecteur infrarouge a base de micro-planches bolometriques suspendues |
US8664602B2 (en) | 2011-12-19 | 2014-03-04 | Bae Systems Information And Electronic Systems Integration Inc. | Wafer-level intrapixel getter reflector whole die encapsulation device and method |
FR2986901B1 (fr) | 2012-02-15 | 2015-07-03 | Commissariat Energie Atomique | Substrat microelectronique comprenant une couche de materiau organique enterree |
FR2999803B1 (fr) | 2012-12-17 | 2018-02-02 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif de detection infrarouge |
FR2999805B1 (fr) * | 2012-12-17 | 2017-12-22 | Commissariat Energie Atomique | Procede de realisation d'un dispositif de detection infrarouge |
US9064982B2 (en) * | 2012-12-21 | 2015-06-23 | Robert Bosch Gmbh | Thin-film encapsulated infrared sensor |
FR3023974B1 (fr) | 2014-07-18 | 2016-07-22 | Ulis | Procede de fabrication d'un dispositif comprenant un boitier hermetique sous vide et un getter |
FR3033042A1 (fr) * | 2015-02-20 | 2016-08-26 | Commissariat Energie Atomique | Dispositif de detection de rayonnement electromagnetique comportant une structure d'encapsulation a event de liberation |
FR3033045B1 (fr) * | 2015-02-20 | 2020-02-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif de detection de rayonnement electromagnetique a structure d'encapsulation hermetique a event de liberation |
FR3033043B1 (fr) | 2015-02-20 | 2020-02-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif de detection de rayonnement comportant une structure d'encapsulation a tenue mecanique amelioree |
FR3033044B1 (fr) | 2015-02-20 | 2020-02-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif de detection de rayonnement comportant une structure d'encapsulation a tenue mecanique amelioree |
FR3046879B1 (fr) | 2016-01-20 | 2022-07-15 | Ulis | Procede de fabrication d'un detecteur de rayonnement electromagnetique a micro-encapsulation |
FR3050870B1 (fr) | 2016-04-28 | 2018-05-25 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation d’un dispositif de detection de rayonnement electromagnetique comportant une couche en un materiau getter |
FR3054318B1 (fr) | 2016-07-21 | 2018-08-31 | Commissariat Energie Atomique | Detecteur bolometrique avec matrice de filtres a mode guide. |
US10825857B2 (en) * | 2016-09-29 | 2020-11-03 | Yantai Raytron Technology Co., Ltd | Pixel for uncooled infrared focal plane detector and preparation method therefor |
FR3064059B1 (fr) | 2017-03-15 | 2019-04-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Capteur de rayonnement muni d'une protection anti-eblouissement |
FR3064060B1 (fr) * | 2017-03-15 | 2021-06-25 | Commissariat Energie Atomique | Capteur de rayonnement muni d'une protection anti-eblouissement |
FR3064061A1 (fr) * | 2017-03-15 | 2018-09-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Capteur de rayonnement muni d'une protection anti-eblouissement |
FR3066044B1 (fr) | 2017-05-02 | 2020-02-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Detecteur de rayonnement electromagnetique, encapsule par report de couche mince. |
FR3070487B1 (fr) | 2017-08-29 | 2019-11-01 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Detecteur de rayonnement electromagnetique |
FR3077878B1 (fr) | 2018-02-15 | 2022-02-04 | Commissariat Energie Atomique | Procede de fabrication d'un microbolometre a materiau sensible a base d'oxyde de vanadium |
KR102121898B1 (ko) * | 2018-10-19 | 2020-06-11 | 한국과학기술원 | 멤스 디바이스 패키지 |
FR3113954B1 (fr) | 2020-09-10 | 2023-03-03 | Commissariat Energie Atomique | Dispositif de filtrage optique |
CN117480365A (zh) | 2021-06-03 | 2024-01-30 | 三菱电机株式会社 | 半导体传感器及其制造方法 |
FR3142546A1 (fr) * | 2022-11-29 | 2024-05-31 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif de détection d’un rayonnement électromagnétique et procédé de fabrication |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3202819C2 (de) * | 1982-01-29 | 1984-12-20 | Preh, Elektrofeinmechanische Werke Jakob Preh Nachf. Gmbh & Co, 8740 Bad Neustadt | Infrarotdetektor und Verfahren zum Herstellen |
US5177661A (en) * | 1989-01-13 | 1993-01-05 | Kopin Corporation | SOI diaphgram sensor |
AU631734B2 (en) * | 1990-04-18 | 1992-12-03 | Terumo Kabushiki Kaisha | Infrared ray sensor and method of manufacturing the same |
DE69313337T2 (de) * | 1992-04-17 | 1998-01-02 | Terumo Corp | Infrarotsensor und Verfahren für dessen Herstellung |
US5369544A (en) * | 1993-04-05 | 1994-11-29 | Ford Motor Company | Silicon-on-insulator capacitive surface micromachined absolute pressure sensor |
US5427975A (en) * | 1993-05-10 | 1995-06-27 | Delco Electronics Corporation | Method of micromachining an integrated sensor on the surface of a silicon wafer |
JPH09506712A (ja) * | 1993-12-13 | 1997-06-30 | ハネウエル・インコーポレーテッド | 赤外線デバイス用集積シリコン真空マイクロパッケージ |
US5627112A (en) * | 1995-11-13 | 1997-05-06 | Rockwell International Corporation | Method of making suspended microstructures |
GB2310952B (en) * | 1996-03-05 | 1998-08-19 | Mitsubishi Electric Corp | Infrared detector |
DE19645036B4 (de) * | 1996-10-31 | 2006-04-20 | Siemens Ag | Pyroelektrische Halbleiter-Detektoreinrichtung für Infrarotstrahlung und Verfahren zur Herstellung |
US6080988A (en) * | 1996-12-20 | 2000-06-27 | Nikon Corporation | Optically readable radiation-displacement-conversion devices and methods, and image-rendering apparatus and methods employing same |
DE19752208A1 (de) * | 1997-11-25 | 1999-06-02 | Bosch Gmbh Robert | Thermischer Membransensor und Verfahren zu seiner Herstellung |
US6252229B1 (en) * | 1998-07-10 | 2001-06-26 | Boeing North American, Inc. | Sealed-cavity microstructure and microbolometer and associated fabrication methods |
US6329655B1 (en) * | 1998-10-07 | 2001-12-11 | Raytheon Company | Architecture and method of coupling electromagnetic energy to thermal detectors |
WO2001033644A1 (en) * | 1999-11-01 | 2001-05-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of manufacture thereof |
US6521477B1 (en) * | 2000-02-02 | 2003-02-18 | Raytheon Company | Vacuum package fabrication of integrated circuit components |
US6559447B2 (en) * | 2000-12-26 | 2003-05-06 | Honeywell International Inc. | Lightweight infrared camera |
-
2001
- 2001-03-21 FR FR0103820A patent/FR2822541B1/fr not_active Expired - Lifetime
-
2002
- 2002-03-20 US US10/103,403 patent/US6753526B2/en not_active Expired - Lifetime
- 2002-03-20 DE DE60233612T patent/DE60233612D1/de not_active Expired - Lifetime
- 2002-03-20 EP EP02290703A patent/EP1243903B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6753526B2 (en) | 2004-06-22 |
FR2822541A1 (fr) | 2002-09-27 |
EP1243903A3 (de) | 2004-09-08 |
FR2822541B1 (fr) | 2003-10-03 |
EP1243903B1 (de) | 2009-09-09 |
US20020175284A1 (en) | 2002-11-28 |
EP1243903A2 (de) | 2002-09-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |