DE60222116D1 - Nichtlineare transistorschaltung mit thermischer stabilität - Google Patents

Nichtlineare transistorschaltung mit thermischer stabilität

Info

Publication number
DE60222116D1
DE60222116D1 DE60222116T DE60222116T DE60222116D1 DE 60222116 D1 DE60222116 D1 DE 60222116D1 DE 60222116 T DE60222116 T DE 60222116T DE 60222116 T DE60222116 T DE 60222116T DE 60222116 D1 DE60222116 D1 DE 60222116D1
Authority
DE
Germany
Prior art keywords
biasing
voltage
bias
circuit
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60222116T
Other languages
English (en)
Other versions
DE60222116T2 (de
Inventor
Michael W Glasbrener
Edward Lawrence
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Skyworks Solutions Inc
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of DE60222116D1 publication Critical patent/DE60222116D1/de
Application granted granted Critical
Publication of DE60222116T2 publication Critical patent/DE60222116T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21112—A filter circuit being added at the input of a power amplifier stage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
DE60222116T 2001-05-31 2002-05-29 Nichtlineare transistorschaltung mit thermischer stabilität Expired - Lifetime DE60222116T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US871517 1986-06-06
US09/871,517 US6678513B2 (en) 2001-05-31 2001-05-31 Non-linear transistor circuits with thermal stability
PCT/US2002/017276 WO2002098008A2 (en) 2001-05-31 2002-05-29 Non-linear transistor circuits with thermal stability

Publications (2)

Publication Number Publication Date
DE60222116D1 true DE60222116D1 (de) 2007-10-11
DE60222116T2 DE60222116T2 (de) 2008-02-14

Family

ID=25357632

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60222116T Expired - Lifetime DE60222116T2 (de) 2001-05-31 2002-05-29 Nichtlineare transistorschaltung mit thermischer stabilität

Country Status (5)

Country Link
US (1) US6678513B2 (de)
EP (1) EP1391046B1 (de)
AT (1) ATE371991T1 (de)
DE (1) DE60222116T2 (de)
WO (1) WO2002098008A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6775525B1 (en) * 1999-10-29 2004-08-10 Renesas Technology Corporation Radio communication apparatus and semiconductor device
JP2003101431A (ja) * 2001-09-26 2003-04-04 Hitachi Kokusai Electric Inc 無線受信機
US6989685B1 (en) 2004-08-19 2006-01-24 International Business Machines Corporation Method and system for maintaining uniform module junction temperature during burn-in
US7746921B1 (en) * 2005-10-11 2010-06-29 Thomas Robert Wik Resonant digital data transmission
CA2834295A1 (en) 2011-04-28 2012-11-01 Nexisvision, Inc. Eye covering and refractive correction methods and apparatus having improved tear flow, comfort, and/or applicability
US9679869B2 (en) 2011-09-02 2017-06-13 Skyworks Solutions, Inc. Transmission line for high performance radio frequency applications
KR101444520B1 (ko) * 2012-02-09 2014-09-24 삼성전기주식회사 증폭 회로 및 그 동작 방법
WO2013188694A1 (en) 2012-06-14 2013-12-19 Skyworks Solutions, Inc. Process-compensated hbt power amplifier bias circuits and methods
KR101680511B1 (ko) 2012-06-14 2016-11-28 스카이워크스 솔루션즈, 인코포레이티드 계조를 갖는 쌍극성 트랜지스터 및 관련된 시스템, 장치, 및 방법을 포함하는 전력 증폭기 모듈

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608353A (en) 1995-03-29 1997-03-04 Rf Micro Devices, Inc. HBT power amplifier
US5877564A (en) * 1997-02-18 1999-03-02 Nokia Mobile Phones Limited Mobile station voltage supply using level shift of base band operating voltages
US6046641A (en) * 1998-07-22 2000-04-04 Eni Technologies, Inc. Parallel HV MOSFET high power stable amplifier

Also Published As

Publication number Publication date
WO2002098008A2 (en) 2002-12-05
DE60222116T2 (de) 2008-02-14
US6678513B2 (en) 2004-01-13
WO2002098008A3 (en) 2003-03-06
EP1391046A2 (de) 2004-02-25
US20020183035A1 (en) 2002-12-05
ATE371991T1 (de) 2007-09-15
EP1391046B1 (de) 2007-08-29
EP1391046A4 (de) 2004-12-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition