DE60221319D1 - Verfahren und Apparat für Speicheranordnungen - Google Patents

Verfahren und Apparat für Speicheranordnungen

Info

Publication number
DE60221319D1
DE60221319D1 DE60221319T DE60221319T DE60221319D1 DE 60221319 D1 DE60221319 D1 DE 60221319D1 DE 60221319 T DE60221319 T DE 60221319T DE 60221319 T DE60221319 T DE 60221319T DE 60221319 D1 DE60221319 D1 DE 60221319D1
Authority
DE
Germany
Prior art keywords
memory arrangements
arrangements
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60221319T
Other languages
English (en)
Other versions
DE60221319T2 (de
Inventor
Robert Rogenmoser
Steve T Nishimoto
Daniel W Dobberpuhl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Broadcom Corp
Original Assignee
Broadcom Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Broadcom Corp filed Critical Broadcom Corp
Publication of DE60221319D1 publication Critical patent/DE60221319D1/de
Application granted granted Critical
Publication of DE60221319T2 publication Critical patent/DE60221319T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
DE60221319T 2001-05-11 2002-05-09 Verfahren und Apparat für Speicheranordnungen Expired - Lifetime DE60221319T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US854365 2001-05-11
US09/854,365 US6430099B1 (en) 2001-05-11 2001-05-11 Method and apparatus to conditionally precharge a partitioned read-only memory with shared wordlines for low power operation

Publications (2)

Publication Number Publication Date
DE60221319D1 true DE60221319D1 (de) 2007-09-06
DE60221319T2 DE60221319T2 (de) 2008-04-17

Family

ID=25318495

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60221319T Expired - Lifetime DE60221319T2 (de) 2001-05-11 2002-05-09 Verfahren und Apparat für Speicheranordnungen

Country Status (3)

Country Link
US (3) US6430099B1 (de)
EP (1) EP1256956B1 (de)
DE (1) DE60221319T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6430099B1 (en) * 2001-05-11 2002-08-06 Broadcom Corporation Method and apparatus to conditionally precharge a partitioned read-only memory with shared wordlines for low power operation
US6542423B1 (en) * 2001-09-18 2003-04-01 Fujitsu Limited Read port design and method for register array
KR100744873B1 (ko) * 2002-08-20 2007-08-01 엘지전자 주식회사 컴퓨터 시스템에서의 펌웨어 기록방법
US6859392B2 (en) 2002-08-26 2005-02-22 Micron Technology, Inc. Preconditioning global bitlines
US7050354B2 (en) * 2003-12-16 2006-05-23 Freescale Semiconductor, Inc. Low-power compiler-programmable memory with fast access timing
US7177212B2 (en) * 2004-01-23 2007-02-13 Agere Systems Inc. Method and apparatus for reducing leakage current in a read only memory device using shortened precharge phase
US7042779B2 (en) * 2004-01-23 2006-05-09 Agere Systems Inc. Method and apparatus for reducing leakage current in a read only memory device using pre-charged sub-arrays
TWI295805B (en) * 2005-04-26 2008-04-11 Via Tech Inc Memory circuit and related method for integrating pre-decode and selective pre-charge
US8917165B2 (en) * 2007-03-08 2014-12-23 The Mitre Corporation RFID tag detection and re-personalization

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4602354A (en) * 1983-01-10 1986-07-22 Ncr Corporation X-and-OR memory array
JPH0640439B2 (ja) * 1986-02-17 1994-05-25 日本電気株式会社 半導体記憶装置
GB8906354D0 (en) * 1989-03-20 1989-05-04 Inmos Ltd Memory accessing
US4969125A (en) * 1989-06-23 1990-11-06 International Business Machines Corporation Asynchronous segmented precharge architecture
JP2825291B2 (ja) * 1989-11-13 1998-11-18 株式会社東芝 半導体記憶装置
KR100275182B1 (ko) * 1990-12-17 2000-12-15 윌리엄 비. 켐플러 순차 메모리
JP3481263B2 (ja) * 1992-02-19 2003-12-22 株式会社リコー シリアル記憶装置
US5787489A (en) * 1995-02-21 1998-07-28 Micron Technology, Inc. Synchronous SRAM having pipelined enable
JP3607407B2 (ja) * 1995-04-26 2005-01-05 株式会社日立製作所 半導体記憶装置
JP3219236B2 (ja) * 1996-02-22 2001-10-15 シャープ株式会社 半導体記憶装置
US5923574A (en) 1996-09-18 1999-07-13 International Business Machines Corporation Optimized, combined leading zeros counter and shifter
JP3241280B2 (ja) * 1996-11-19 2001-12-25 株式会社東芝 ダイナミック型半導体記憶装置
JP3862333B2 (ja) * 1996-12-10 2006-12-27 株式会社ルネサステクノロジ 半導体記憶装置
JPH10269800A (ja) * 1997-03-27 1998-10-09 Mitsubishi Electric Corp 半導体記憶装置
US5959916A (en) 1998-02-06 1999-09-28 International Business Machines Corporation Write driver and bit line precharge apparatus and method
US5923594A (en) * 1998-02-17 1999-07-13 Micron Technology, Inc. Method and apparatus for coupling data from a memory device using a single ended read data path
JPH11260056A (ja) * 1998-03-12 1999-09-24 Matsushita Electric Ind Co Ltd 半導体記憶装置
DE69820246D1 (de) 1998-07-20 2004-01-15 St Microelectronics Srl Schaltung und Verfahren zum Lesen eines nichtflüchtigen Speichers
JP3863313B2 (ja) 1999-03-19 2006-12-27 富士通株式会社 半導体記憶装置
US6181641B1 (en) 1999-05-26 2001-01-30 Lockheed Martin Corporation Memory device having reduced power requirements and associated methods
US6430099B1 (en) 2001-05-11 2002-08-06 Broadcom Corporation Method and apparatus to conditionally precharge a partitioned read-only memory with shared wordlines for low power operation

Also Published As

Publication number Publication date
US20020167854A1 (en) 2002-11-14
US6671216B2 (en) 2003-12-30
EP1256956B1 (de) 2007-07-25
EP1256956A2 (de) 2002-11-13
US20030107933A1 (en) 2003-06-12
US6430099B1 (en) 2002-08-06
US6538943B2 (en) 2003-03-25
DE60221319T2 (de) 2008-04-17
EP1256956A3 (de) 2004-07-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: BOSCH JEHLE PATENTANWALTSGESELLSCHAFT MBH, 80639 M