DE60217478D1 - Sychrongleichrichter - Google Patents
SychrongleichrichterInfo
- Publication number
- DE60217478D1 DE60217478D1 DE60217478T DE60217478T DE60217478D1 DE 60217478 D1 DE60217478 D1 DE 60217478D1 DE 60217478 T DE60217478 T DE 60217478T DE 60217478 T DE60217478 T DE 60217478T DE 60217478 D1 DE60217478 D1 DE 60217478D1
- Authority
- DE
- Germany
- Prior art keywords
- sychrongleichrichter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
- H02M3/33592—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/30—Modifications for providing a predetermined threshold before switching
- H03K2017/307—Modifications for providing a predetermined threshold before switching circuits simulating a diode, e.g. threshold zero
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Rectifiers (AREA)
- Dc-Dc Converters (AREA)
- Power Conversion In General (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0107662.9A GB0107662D0 (en) | 2001-03-28 | 2001-03-28 | Synchronous rectifiers |
GBGB0108382.3A GB0108382D0 (en) | 2001-03-28 | 2001-04-04 | Synchronous rectifiers |
PCT/IB2002/000905 WO2002084873A1 (en) | 2001-03-28 | 2002-03-19 | Synchronous rectifiers |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60217478D1 true DE60217478D1 (en) | 2007-02-22 |
Family
ID=26245901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60217478T Expired - Lifetime DE60217478D1 (en) | 2001-03-28 | 2002-03-19 | Sychrongleichrichter |
Country Status (5)
Country | Link |
---|---|
US (1) | US6747880B2 (de) |
EP (1) | EP1388208B1 (de) |
JP (1) | JP2004519991A (de) |
DE (1) | DE60217478D1 (de) |
WO (1) | WO2002084873A1 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6831847B2 (en) * | 2000-11-20 | 2004-12-14 | Artesyn Technologies, Inc. | Synchronous rectifier drive circuit and power supply including same |
US6975023B2 (en) * | 2002-09-04 | 2005-12-13 | International Rectifier Corporation | Co-packaged control circuit, transistor and inverted diode |
US7030680B2 (en) * | 2003-02-26 | 2006-04-18 | Integrated Discrete Devices, Llc | On chip power supply |
DE10345929A1 (de) * | 2003-10-02 | 2005-04-21 | Bosch Gmbh Robert | Elektronischer Diodenschaltkreis |
US8134851B2 (en) | 2003-11-04 | 2012-03-13 | International Rectifier Corporation | Secondary side synchronous rectifier for resonant converter |
US7408796B2 (en) | 2003-11-04 | 2008-08-05 | International Rectifier Corporation | Integrated synchronous rectifier package |
US7157959B2 (en) * | 2004-03-31 | 2007-01-02 | Semiconductor Components Industries, L.L.C. | Method of forming a self-gated transistor and structure therefor |
US7078829B2 (en) * | 2004-05-28 | 2006-07-18 | Motorola, Inc. | Self-powering input buffer |
DE102004029439A1 (de) * | 2004-06-18 | 2006-02-02 | Infineon Technologies Ag | Gleichrichter-Schaltkreis, Schaltkreis-Anordnung und Verfahren zum Herstellen eines Gleichrichter-Schaltkreises |
US20050280133A1 (en) * | 2004-06-21 | 2005-12-22 | Alpha & Omega Semiconductor | Multiple device package |
US20060073024A1 (en) * | 2004-09-17 | 2006-04-06 | Nanocoolers, Inc. | Series gated secondary loop power supply configuration for electromagnetic pump and integral combination thereof |
JP4059874B2 (ja) * | 2004-09-30 | 2008-03-12 | 富士通株式会社 | 整流回路 |
DE102005033477B4 (de) * | 2005-07-18 | 2016-02-04 | Austriamicrosystems Ag | Schaltungsanordnung und Verfahren zum Konvertieren einer Wechselspannung in eine gleichgerichtete Spannung |
SG130957A1 (en) * | 2005-09-15 | 2007-04-26 | St Microelectronics Asia | An electrical isolation circuit for preventing current flow from an electrical application to a dc power source |
FR2908945B1 (fr) * | 2006-11-16 | 2009-01-30 | Valeo Equip Electr Moteur | Element de pont redresseur synchrone, pont redresseur synchrone correspondant et utilisation. |
JP4811948B2 (ja) * | 2007-02-02 | 2011-11-09 | 三菱電機株式会社 | 整流装置 |
EP2128984B2 (de) | 2007-02-02 | 2020-03-11 | Mitsubishi Electric Corporation | Gleichrichter |
JP4833101B2 (ja) * | 2007-02-02 | 2011-12-07 | 三菱電機株式会社 | 整流装置 |
US8031498B2 (en) | 2007-07-05 | 2011-10-04 | Infineon Technologies Austria Ag | Active diode |
DE102007060219A1 (de) * | 2007-12-14 | 2009-06-18 | Robert Bosch Gmbh | Gleichrichterschaltung |
JP4846744B2 (ja) * | 2008-02-18 | 2011-12-28 | 三菱電機株式会社 | 一方向導通装置 |
US8064227B2 (en) * | 2008-09-08 | 2011-11-22 | GM Global Technology Operations LLC | Rectifying circuit for a multiphase electric machine |
TWI460980B (zh) * | 2009-01-13 | 2014-11-11 | Linear Techn Inc | 極性獨立、極低輸入電壓的步升轉換器 |
US8526202B2 (en) | 2009-10-22 | 2013-09-03 | Bcd Semiconductor Manufacturing Limited | System and method for synchronous rectifier |
US8354871B2 (en) * | 2009-11-09 | 2013-01-15 | University Of Florida Research Foundation, Inc. | Self-powered comparator |
US8913409B2 (en) * | 2010-02-12 | 2014-12-16 | City University Of Hong Kong | Self-driven AC-DC synchronous rectifier for power applications |
JP2012004254A (ja) * | 2010-06-15 | 2012-01-05 | Panasonic Corp | ダイオード回路 |
US8618864B2 (en) | 2011-04-18 | 2013-12-31 | Steven Andrew Robbins | Self-powered active rectifier circuit and related method of operation for photovoltaic solar power arrays |
US8606447B2 (en) | 2011-05-23 | 2013-12-10 | GM Global Technology Operations LLC | Method and apparatus to operate a powertrain system including an electric machine having a disconnected high-voltage battery |
US8941264B2 (en) * | 2011-06-20 | 2015-01-27 | Bae Systems Information And Electronic Systems Integration Inc. | Apparatus for bi-directional power switching in low voltage vehicle power distribution systems |
JP5630409B2 (ja) * | 2011-09-21 | 2014-11-26 | シャープ株式会社 | プッシュプル回路、dc/dcコンバータ、ソーラー充電システム、及び移動体 |
US9434258B2 (en) | 2011-11-18 | 2016-09-06 | GM Global Technology Operations LLC | Power converter with diagnostic unit power supply output |
US9337725B2 (en) * | 2013-07-22 | 2016-05-10 | Microchip Technology Inc. | Output current control in a boundary conduction mode buck converter |
US9306464B2 (en) * | 2013-09-04 | 2016-04-05 | System General Corporation | Synchronous rectifier control circuits of power converters |
DE102013221322A1 (de) * | 2013-10-21 | 2015-04-23 | Robert Bosch Gmbh | Halbbrücke für einen aktiven Gleichrichter |
JP6155179B2 (ja) * | 2013-12-06 | 2017-06-28 | 株式会社日立製作所 | 整流装置、オルタネータおよび電力変換装置 |
JP6207460B2 (ja) * | 2014-05-19 | 2017-10-04 | 三菱電機株式会社 | 半導体装置 |
KR20160009115A (ko) * | 2014-07-14 | 2016-01-26 | 삼성전자주식회사 | 교류 전압을 정류된 전압으로 변환하기 위한 정류 회로 |
DE102015011718A1 (de) | 2014-09-10 | 2016-03-10 | Infineon Technologies Ag | Gleichrichtervorrichtung und Anordnung von Gleichrichtern |
JP6263108B2 (ja) | 2014-09-11 | 2018-01-17 | 株式会社日立製作所 | 半導体装置、並びにそれを用いたオルタネータ及び電力変換装置 |
CN104901520B (zh) * | 2015-06-25 | 2018-02-06 | 上海灿瑞科技股份有限公司 | 一种用于升压架构的基极电压控制电路 |
WO2017017901A1 (ja) * | 2015-07-29 | 2017-02-02 | パナソニックIpマネジメント株式会社 | 半導体装置 |
US10128833B2 (en) | 2015-07-31 | 2018-11-13 | Texas Instruments Incorporated | Millivolt power harvesting FET controller |
US20170033793A1 (en) * | 2015-07-31 | 2017-02-02 | Texas Instruments Incorporated | Millivolt power harvesting fet controller |
JP6617002B2 (ja) * | 2015-10-20 | 2019-12-04 | 株式会社 日立パワーデバイス | 整流器、それを用いたオルタネータおよび電源 |
CN106160536B (zh) * | 2016-07-04 | 2018-09-21 | 电子科技大学 | 一种用于电机发电的整流电路 |
US10333425B1 (en) | 2018-05-03 | 2019-06-25 | Linear Technology Holding Llc | Self-biasing ideal diode circuit |
US10594224B2 (en) * | 2018-05-29 | 2020-03-17 | Diodes Incorporated | Switch mode power supply for continuous conduction mode operation |
GB2590057B (en) * | 2019-10-10 | 2022-11-16 | Steifpower Tech Company Limited | A Field-Effect Transistor (FET) based synchronous rectifier for emulating a diode |
FR3113792B1 (fr) * | 2020-08-28 | 2022-10-28 | St Microelectronics Tours Sas | Dispositif de commande d'une diode OFT |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0574646B1 (de) * | 1992-06-16 | 1997-12-29 | STMicroelectronics S.r.l. | Schaltung zur Steuerung des maximalen Stroms in einen Leistungs-MOS-Transistor mit einer Last, die an Masse geschaltet ist |
ES2056747B1 (es) * | 1993-03-31 | 1997-10-16 | Alcatel Standard Electrica | Circuito de conversion de continua-continua. |
US5592117A (en) * | 1995-04-11 | 1997-01-07 | International Rectifier Corporation | Integrated MOSgated power semiconductor device with high negative clamp voltage and fail safe operation |
US5973367A (en) * | 1995-10-13 | 1999-10-26 | Siliconix Incorporated | Multiple gated MOSFET for use in DC-DC converter |
US5616945A (en) * | 1995-10-13 | 1997-04-01 | Siliconix Incorporated | Multiple gated MOSFET for use in DC-DC converter |
JP3875996B2 (ja) * | 1995-12-29 | 2007-01-31 | イーエム・ミクロエレクトロニク―マリン・エス アー | エネルギー損失がごく少ない能動型整流器 |
US5736890A (en) * | 1996-04-03 | 1998-04-07 | Semi Technology Design, Inc. | Method and apparatus for controlling transistors as rectifiers |
US6060943A (en) * | 1998-04-14 | 2000-05-09 | Nmb (Usa) Inc. | Circuit simulating a diode |
US6137165A (en) * | 1999-06-25 | 2000-10-24 | International Rectifier Corp. | Hybrid package including a power MOSFET die and a control and protection circuit die with a smaller sense MOSFET |
US6421262B1 (en) * | 2000-02-08 | 2002-07-16 | Vlt Corporation | Active rectifier |
-
2002
- 2002-03-19 WO PCT/IB2002/000905 patent/WO2002084873A1/en active IP Right Grant
- 2002-03-19 DE DE60217478T patent/DE60217478D1/de not_active Expired - Lifetime
- 2002-03-19 JP JP2002582488A patent/JP2004519991A/ja not_active Withdrawn
- 2002-03-19 EP EP02714378A patent/EP1388208B1/de not_active Expired - Lifetime
- 2002-03-20 US US10/101,990 patent/US6747880B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1388208B1 (de) | 2007-01-10 |
US20020141214A1 (en) | 2002-10-03 |
WO2002084873A1 (en) | 2002-10-24 |
EP1388208A1 (de) | 2004-02-11 |
JP2004519991A (ja) | 2004-07-02 |
US6747880B2 (en) | 2004-06-08 |
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