DE60212777D1 - OPC-Verfahren mit nicht auflösenden Phasensprung-Hilfsstrukturen - Google Patents

OPC-Verfahren mit nicht auflösenden Phasensprung-Hilfsstrukturen

Info

Publication number
DE60212777D1
DE60212777D1 DE60212777T DE60212777T DE60212777D1 DE 60212777 D1 DE60212777 D1 DE 60212777D1 DE 60212777 T DE60212777 T DE 60212777T DE 60212777 T DE60212777 T DE 60212777T DE 60212777 D1 DE60212777 D1 DE 60212777D1
Authority
DE
Germany
Prior art keywords
substructures
shift
opc method
resolving phase
resolving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60212777T
Other languages
English (en)
Other versions
DE60212777T2 (de
Inventor
Den Broeke Douglas Van
J Fung Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML MaskTools Netherlands BV
Original Assignee
ASML MaskTools Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML MaskTools Netherlands BV filed Critical ASML MaskTools Netherlands BV
Application granted granted Critical
Publication of DE60212777D1 publication Critical patent/DE60212777D1/de
Publication of DE60212777T2 publication Critical patent/DE60212777T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
DE60212777T 2001-09-28 2002-09-26 OPC-Verfahren mit nicht auflösenden Phasensprung-Hilfsstrukturen Expired - Fee Related DE60212777T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US32521101P 2001-09-28 2001-09-28
US325211P 2001-09-28
US152686 2002-05-23
US10/152,686 US7026081B2 (en) 2001-09-28 2002-05-23 Optical proximity correction method utilizing phase-edges as sub-resolution assist features

Publications (2)

Publication Number Publication Date
DE60212777D1 true DE60212777D1 (de) 2006-08-10
DE60212777T2 DE60212777T2 (de) 2007-06-28

Family

ID=26849769

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60212777T Expired - Fee Related DE60212777T2 (de) 2001-09-28 2002-09-26 OPC-Verfahren mit nicht auflösenden Phasensprung-Hilfsstrukturen

Country Status (6)

Country Link
US (2) US7026081B2 (de)
EP (1) EP1298489B1 (de)
JP (1) JP3939234B2 (de)
KR (1) KR100542268B1 (de)
DE (1) DE60212777T2 (de)
TW (1) TW574595B (de)

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JP3799286B2 (ja) * 2001-02-27 2006-07-19 エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ サブ分解能アシストフューチャとしてグレーバーを使用する光近接補正方法
US6887633B2 (en) * 2002-02-08 2005-05-03 Chih-Hsien Nail Tang Resolution enhancing technology using phase assignment bridges
US6883159B2 (en) * 2002-03-19 2005-04-19 Intel Corporation Patterning semiconductor layers using phase shifting and assist features
US7266480B2 (en) * 2002-10-01 2007-09-04 The Regents Of The University Of California Rapid scattering simulation of objects in imaging using edge domain decomposition
WO2006001785A1 (en) 2003-05-30 2006-01-05 Cdm Optics, Inc. Lithographic systems and methods with extended depth of focus
SG144723A1 (en) * 2003-06-30 2008-08-28 Asml Masktools Bv A method, program product and apparatus for generating assist features utilizing an image field map
KR100556044B1 (ko) * 2003-12-31 2006-03-03 동부아남반도체 주식회사 다마신 공정에서의 패턴 향상 방법
KR100585127B1 (ko) * 2004-02-11 2006-06-01 삼성전자주식회사 투명 기판에 형성된 스캐터링 바아를 포함하는 포토 마스크
JP4254603B2 (ja) 2004-04-23 2009-04-15 凸版印刷株式会社 レベンソン型位相シフトマスク及びその製造方法
US7632610B2 (en) * 2004-09-02 2009-12-15 Intel Corporation Sub-resolution assist features
CN101080671B (zh) 2004-12-15 2010-05-12 凸版印刷株式会社 相移掩模及其制造方法以及半导体元件的制造方法
US7681171B2 (en) 2005-04-12 2010-03-16 Asml Masktooks B.V. Method, program product and apparatus for performing double exposure lithography
US7732102B2 (en) * 2005-07-14 2010-06-08 Freescale Semiconductor, Inc. Cr-capped chromeless phase lithography
US20070038585A1 (en) * 2005-08-15 2007-02-15 Thommes Family, Llc Method for simulating a response to a stimulus
US7836423B2 (en) 2006-03-08 2010-11-16 Mentor Graphics Corporation Sum of coherent systems (SOCS) approximation based on object information
US20070253637A1 (en) * 2006-03-08 2007-11-01 Mentor Graphics Corp. Image intensity calculation using a sectored source map
JP4690946B2 (ja) * 2006-06-02 2011-06-01 株式会社東芝 シミュレーションモデルの作成方法、プログラム及び半導体装置の製造方法
US7669171B2 (en) * 2007-09-05 2010-02-23 United Miceoelectronics Corp. Prediction model and prediction method for exposure dose
US8323857B2 (en) 2010-12-21 2012-12-04 Ultratech, Inc. Phase-shift mask with assist phase regions
JP5497693B2 (ja) * 2011-06-10 2014-05-21 Ｈｏｙａ株式会社 フォトマスク基板、フォトマスク基板の製造方法、フォトマスクの製造方法、及びパターン転写方法
EP2570854B1 (de) 2011-09-16 2016-11-30 Imec Bestimmung der Form der Beleuchtungsquelle in optischer Lithographie
CN102867782A (zh) * 2012-09-17 2013-01-09 上海华力微电子有限公司 一种电子可编程熔丝器件的修正方法
US10176966B1 (en) 2017-04-13 2019-01-08 Fractilia, Llc Edge detection system
US10522322B2 (en) 2017-04-13 2019-12-31 Fractilia, Llc System and method for generating and analyzing roughness measurements
CN113050367A (zh) * 2019-12-27 2021-06-29 中芯国际集成电路制造(上海)有限公司 光学邻近效应修正方法和系统、掩膜版及其制备方法
CN113359385B (zh) * 2021-06-25 2023-10-17 矽万(上海)半导体科技有限公司 一种基于opc模型的无掩模光刻优化方法

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US5523193A (en) 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
JP2710967B2 (ja) * 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法
KR960006819B1 (ko) * 1988-11-22 1996-05-23 가부시끼가이샤 히다찌세이사꾸쇼 집적회로장치의 제조방법 및 그에 사용되는 광학 마스크
ATE123885T1 (de) 1990-05-02 1995-06-15 Fraunhofer Ges Forschung Belichtungsvorrichtung.
US5229872A (en) 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
US5302477A (en) * 1992-08-21 1994-04-12 Intel Corporation Inverted phase-shifted reticle
JP2661529B2 (ja) 1993-11-30 1997-10-08 日本電気株式会社 位相シフトマスク
JPH09127676A (ja) 1995-11-06 1997-05-16 Seiko Epson Corp ホトマスク及び半導体装置の製造方法
JP2773718B2 (ja) 1995-11-29 1998-07-09 日本電気株式会社 フォトマスクおよびパターン形成方法
WO1997033205A1 (en) 1996-03-06 1997-09-12 Philips Electronics N.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
US5807649A (en) * 1996-10-31 1998-09-15 International Business Machines Corporation Lithographic patterning method and mask set therefor with light field trim mask
DE69735016T2 (de) 1996-12-24 2006-08-17 Asml Netherlands B.V. Lithographisches Gerät mit zwei Objekthaltern
US5821014A (en) 1997-02-28 1998-10-13 Microunity Systems Engineering, Inc. Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask
JP3626504B2 (ja) 1997-03-10 2005-03-09 アーエスエム リソグラフィ ベスローテン フェンノートシャップ ２個の物品ホルダを有する位置決め装置
JP3070520B2 (ja) 1997-05-26 2000-07-31 日本電気株式会社 フォトマスク及び露光方法
US5827625A (en) * 1997-08-18 1998-10-27 Motorola, Inc. Methods of designing a reticle and forming a semiconductor device therewith
US6114071A (en) * 1997-11-24 2000-09-05 Asml Masktools Netherlands B.V. Method of fine feature edge tuning with optically-halftoned mask
WO1999034416A1 (fr) 1997-12-26 1999-07-08 Nikon Corporation Appareil d'exposition par projection et procede d'exposition
US6312854B1 (en) * 1998-03-17 2001-11-06 Asml Masktools Netherlands B.V. Method of patterning sub-0.25 lambda line features with high transmission, “attenuated” phase shift masks
JP2000214572A (ja) 1999-01-26 2000-08-04 Seiko Epson Corp フォトマスク及びそれを備えた露光装置
US6482552B2 (en) * 1999-10-18 2002-11-19 Micron Technology, Inc. Reticle forming methods
TW512424B (en) * 2000-05-01 2002-12-01 Asml Masktools Bv Hybrid phase-shift mask
US6335130B1 (en) * 2000-05-01 2002-01-01 Asml Masktools Netherlands B.V. System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features

Also Published As

Publication number Publication date
DE60212777T2 (de) 2007-06-28
EP1298489B1 (de) 2006-06-28
KR100542268B1 (ko) 2006-01-16
EP1298489A2 (de) 2003-04-02
US20050271953A1 (en) 2005-12-08
EP1298489A3 (de) 2003-08-27
JP3939234B2 (ja) 2007-07-04
US20030064298A1 (en) 2003-04-03
US7399559B2 (en) 2008-07-15
KR20030027825A (ko) 2003-04-07
TW574595B (en) 2004-02-01
JP2003177511A (ja) 2003-06-27
US7026081B2 (en) 2006-04-11

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