DE60211289D1 - Quarzglastiegel mit innerer Kristallisierungsschicht und Verfahren zu seiner Herstellung - Google Patents

Quarzglastiegel mit innerer Kristallisierungsschicht und Verfahren zu seiner Herstellung

Info

Publication number
DE60211289D1
DE60211289D1 DE60211289T DE60211289T DE60211289D1 DE 60211289 D1 DE60211289 D1 DE 60211289D1 DE 60211289 T DE60211289 T DE 60211289T DE 60211289 T DE60211289 T DE 60211289T DE 60211289 D1 DE60211289 D1 DE 60211289D1
Authority
DE
Germany
Prior art keywords
preparation
quartz glass
glass crucible
crystallization layer
inner crystallization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60211289T
Other languages
English (en)
Other versions
DE60211289T2 (de
Inventor
Katsuhiko Kemmochi
Robert O Mosier
Paul G Spencer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Quarzglas GmbH and Co KG
Heraeus Shin Etsu America Inc
Original Assignee
Heraeus Quarzglas GmbH and Co KG
Heraeus Shin Etsu America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Quarzglas GmbH and Co KG, Heraeus Shin Etsu America Inc filed Critical Heraeus Quarzglas GmbH and Co KG
Publication of DE60211289D1 publication Critical patent/DE60211289D1/de
Application granted granted Critical
Publication of DE60211289T2 publication Critical patent/DE60211289T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S65/00—Glass manufacturing
    • Y10S65/08—Quartz
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60211289T 2001-12-12 2002-12-05 Quarzglastiegel mit innerer Kristallisierungsschicht und Verfahren zu seiner Herstellung Expired - Lifetime DE60211289T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21631 2001-12-12
US10/021,631 US6641663B2 (en) 2001-12-12 2001-12-12 Silica crucible with inner layer crystallizer and method

Publications (2)

Publication Number Publication Date
DE60211289D1 true DE60211289D1 (de) 2006-06-14
DE60211289T2 DE60211289T2 (de) 2007-03-29

Family

ID=21805284

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60211289T Expired - Lifetime DE60211289T2 (de) 2001-12-12 2002-12-05 Quarzglastiegel mit innerer Kristallisierungsschicht und Verfahren zu seiner Herstellung

Country Status (3)

Country Link
US (2) US6641663B2 (de)
EP (1) EP1319736B1 (de)
DE (1) DE60211289T2 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
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US20030012899A1 (en) * 2001-07-16 2003-01-16 Heraeus Shin-Etsu America Doped silica glass crucible for making a silicon ingot
US7118789B2 (en) * 2001-07-16 2006-10-10 Heraeus Shin-Etsu America Silica glass crucible
US6712901B2 (en) * 2001-10-16 2004-03-30 Japan Super Quartz Corporation Surface modification process of quartz glass crucible
DE10156137B4 (de) * 2001-11-15 2004-08-19 Wacker-Chemie Gmbh Verfahren zur Herstellung eines Kieselglastiegels mit kristallinen Bereichen aus einem porösen Kieselglasgrünkörper
US20030183161A1 (en) 2002-03-29 2003-10-02 Japan Super Quartz Corporation Surface modified quartz glass crucible and its modification process
JP4086283B2 (ja) * 2002-07-31 2008-05-14 信越石英株式会社 シリコン単結晶引上げ用石英ガラスルツボおよびその製造方法
JP4339003B2 (ja) * 2003-04-02 2009-10-07 ジャパンスーパークォーツ株式会社 石英ガラスルツボの製造方法
US8277559B2 (en) * 2003-05-01 2012-10-02 Heraeus Quarzglas Gmbh & Co. Kg Quartz glass crucible for pulling up silicon single crystal and method for manufacture thereof
DE602004029057D1 (de) * 2003-05-30 2010-10-21 Heraeus Quarzglas Quarzglastiegel zum ziehen von siliciumeinkristall
US20050120945A1 (en) * 2003-12-03 2005-06-09 General Electric Company Quartz crucibles having reduced bubble content and method of making thereof
US7497907B2 (en) * 2004-07-23 2009-03-03 Memc Electronic Materials, Inc. Partially devitrified crucible
US7562858B2 (en) * 2005-03-16 2009-07-21 Diamond Innovations, Inc. Wear and texture coatings for components used in manufacturing glass light bulbs
US7383696B2 (en) * 2005-09-08 2008-06-10 Heraeus Shin-Etsu America, Inc. Silica glass crucible with bubble-free and reduced bubble growth wall
US7427327B2 (en) * 2005-09-08 2008-09-23 Heraeus Shin-Etsu America, Inc. Silica glass crucible with barium-doped inner wall
US20070084400A1 (en) * 2005-10-19 2007-04-19 General Electric Company Quartz glass crucible and method for treating surface of quartz glass crucible
US7556764B2 (en) * 2005-11-09 2009-07-07 Heraeus Shin-Etsu America, Inc. Silica vessel with nozzle and method of making
TW200730672A (en) * 2005-11-29 2007-08-16 Japan Super Quartz Corp Quartz glass crucible, method of producing the same, and application thereof
US7837955B2 (en) * 2006-03-08 2010-11-23 Unimin Corporation Continuous reactor system for anoxic purification
TWI408259B (zh) * 2006-09-28 2013-09-11 Shinetsu Quartz Prod 具有鋇摻雜內壁的矽玻璃坩堝
US7716948B2 (en) * 2006-12-18 2010-05-18 Heraeus Shin-Etsu America, Inc. Crucible having a doped upper wall portion and method for making the same
JP5229778B2 (ja) * 2007-09-28 2013-07-03 株式会社Ｓｕｍｃｏ シリコン単結晶引き上げ用石英ガラスルツボの製造方法
US8272234B2 (en) * 2008-12-19 2012-09-25 Heraeus Shin-Etsu America, Inc. Silica crucible with pure and bubble free inner crucible layer and method of making the same
US20120006254A1 (en) * 2009-02-10 2012-01-12 Masaru Fujishiro Quartz glass crucible for pulling single-crystal silicon and process for producing single-crystal silicon
US8420192B2 (en) * 2009-05-26 2013-04-16 Shin-Etsu Quartz Products Co., Ltd. Silica container and method for producing the same
US9003832B2 (en) * 2009-11-20 2015-04-14 Heraeus Shin-Etsu America, Inc. Method of making a silica crucible in a controlled atmosphere
CN102453956B (zh) * 2010-10-27 2016-03-23 杭州先进石英材料有限公司 一种石英玻璃坩埚及其制备方法
JP5605902B2 (ja) * 2010-12-01 2014-10-15 株式会社Ｓｕｍｃｏ シリカガラスルツボの製造方法、シリカガラスルツボ
JP5500689B2 (ja) * 2010-12-03 2014-05-21 株式会社Ｓｕｍｃｏ シリカガラスルツボ
JP5773382B2 (ja) * 2010-12-29 2015-09-02 株式会社Sumco シリカガラスルツボ及びその製造方法
JP4854814B1 (ja) 2011-04-28 2012-01-18 Ｆｔｂ研究所株式会社 シリコン結晶成長用石英坩堝のコーティング方法及びシリコン結晶成長用石英坩堝
JP5509188B2 (ja) * 2011-12-26 2014-06-04 ジルトロニック アクチエンゲゼルシャフト 単結晶シリコンの製造方法
JP5509189B2 (ja) * 2011-12-26 2014-06-04 ジルトロニック アクチエンゲゼルシャフト 単結晶シリコンの製造方法
US20140352605A1 (en) * 2013-05-31 2014-12-04 Heraeus Shin-Etsu America, Inc. Method for making barium-doped crucible and crucible made thereby
EP3218317B1 (de) 2014-11-13 2018-10-17 Gerresheimer Glas GmbH Partikelfilter einer glasformmaschine, kolbeneinheit, blaskopf, blaskopfstütze und an diesen filter angepasste glasformmaschine oder glasformmaschine mit diesem filter
CN104389014B (zh) * 2014-12-02 2017-04-05 江苏科技大学 一种用于单晶生长的石英坩埚及其制备方法
CN104651932B (zh) * 2015-03-17 2017-11-07 江西中昱新材料科技有限公司 一种多晶石英陶瓷坩埚及其制备方法
CN113897669B (zh) 2016-09-13 2023-11-07 胜高股份有限公司 石英玻璃坩埚及其制造方法
CN110552057A (zh) * 2019-10-11 2019-12-10 内蒙古中环协鑫光伏材料有限公司 一种新型石英坩埚及提高单晶硅棒尾部寿命的方法
CN110552056A (zh) * 2019-10-11 2019-12-10 内蒙古中环协鑫光伏材料有限公司 一种改善直拉单晶成晶方法
CN110541193A (zh) * 2019-10-11 2019-12-06 内蒙古中环协鑫光伏材料有限公司 一种石英坩埚及其制备方法
US11873574B2 (en) * 2019-12-13 2024-01-16 Globalwafers Co., Ltd. Systems and methods for production of silicon using a horizontal magnetic field

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4637571A (en) 1985-09-03 1987-01-20 The United States Of America As Represented By The Secretary Of The Army Electronic image stabilization
JPH01126238A (ja) 1987-11-09 1989-05-18 Shinetsu Sekiei Kk 石英ガラス炉芯管
US4935046A (en) 1987-12-03 1990-06-19 Shin-Etsu Handotai Company, Limited Manufacture of a quartz glass vessel for the growth of single crystal semiconductor
JP3268049B2 (ja) 1993-01-26 2002-03-25 東芝セラミックス株式会社 石英ガラス材及びその製造法
JP3100836B2 (ja) 1994-06-20 2000-10-23 信越石英株式会社 石英ガラスルツボとその製造方法
JP3040315B2 (ja) 1994-08-03 2000-05-15 信越化学工業株式会社 高粘度合成石英ガラス部材およびその製造方法
US5980629A (en) * 1995-06-14 1999-11-09 Memc Electronic Materials, Inc. Methods for improving zero dislocation yield of single crystals
US5976247A (en) 1995-06-14 1999-11-02 Memc Electronic Materials, Inc. Surface-treated crucibles for improved zero dislocation performance
JP3764776B2 (ja) 1996-03-18 2006-04-12 信越石英株式会社 単結晶引き上げ用石英ガラスるつぼ及びその製造方法
US6106610A (en) * 1997-09-30 2000-08-22 Heraeus Quarzglas Gmbh & Co. Kg Quartz glass crucible for producing silicone single crystal and method for producing the crucible
JP3621282B2 (ja) 1999-02-25 2005-02-16 東芝セラミックス株式会社 石英ガラスルツボおよびその製造方法
US6319313B1 (en) 1999-03-15 2001-11-20 Memc Electronic Materials, Inc. Barium doping of molten silicon for use in crystal growing process
US6350312B1 (en) 1999-03-15 2002-02-26 Memc Electronic Materials, Inc. Strontium doping of molten silicon for use in crystal growing process
US6479108B2 (en) 2000-11-15 2002-11-12 G.T. Equipment Technologies, Inc. Protective layer for quartz crucibles used for silicon crystallization
US6755049B2 (en) * 2001-03-08 2004-06-29 Heraeus Quarzglas Gmbh & Co. Kg Method of producing a quartz glass crucible
US6875515B2 (en) * 2002-05-10 2005-04-05 General Electric Company Fused quartz article having controlled devitrification

Also Published As

Publication number Publication date
EP1319736B1 (de) 2006-05-10
US20030106491A1 (en) 2003-06-12
US6641663B2 (en) 2003-11-04
DE60211289T2 (de) 2007-03-29
US20040040497A1 (en) 2004-03-04
EP1319736A1 (de) 2003-06-18

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