DE60203367D1 - Justierbare strömungslimitierende öffnung für ionenimplantierungsgeräte - Google Patents
Justierbare strömungslimitierende öffnung für ionenimplantierungsgeräteInfo
- Publication number
- DE60203367D1 DE60203367D1 DE60203367T DE60203367T DE60203367D1 DE 60203367 D1 DE60203367 D1 DE 60203367D1 DE 60203367 T DE60203367 T DE 60203367T DE 60203367 T DE60203367 T DE 60203367T DE 60203367 D1 DE60203367 D1 DE 60203367D1
- Authority
- DE
- Germany
- Prior art keywords
- ion implanting
- adjustable flow
- leveling opening
- implanting equipment
- equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
- H01J2237/188—Differential pressure
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26259401P | 2001-01-18 | 2001-01-18 | |
US262594P | 2001-01-18 | ||
PCT/US2002/001164 WO2002058102A2 (en) | 2001-01-18 | 2002-01-16 | Adjustable conductance limiting aperture for ion implanters |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60203367D1 true DE60203367D1 (de) | 2005-04-28 |
DE60203367T2 DE60203367T2 (de) | 2006-04-06 |
Family
ID=22998185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60203367T Expired - Fee Related DE60203367T2 (de) | 2001-01-18 | 2002-01-16 | Justierbare strömungslimitierende öffnung für ionenimplantierungsgeräte |
Country Status (8)
Country | Link |
---|---|
US (1) | US6791097B2 (de) |
EP (1) | EP1352411B1 (de) |
JP (1) | JP3926745B2 (de) |
KR (1) | KR100883237B1 (de) |
CN (1) | CN1322538C (de) |
DE (1) | DE60203367T2 (de) |
TW (1) | TWI250548B (de) |
WO (1) | WO2002058102A2 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7547460B2 (en) * | 2000-09-15 | 2009-06-16 | Varian Semiconductor Equipment Associates, Inc. | Ion implanter optimizer scan waveform retention and recovery |
US20050061997A1 (en) * | 2003-09-24 | 2005-03-24 | Benveniste Victor M. | Ion beam slit extraction with mass separation |
US7102146B2 (en) * | 2004-06-03 | 2006-09-05 | Axcelis Technologies, Inc. | Dose cup located near bend in final energy filter of serial implanter for closed loop dose control |
US6989545B1 (en) * | 2004-07-07 | 2006-01-24 | Axcelis Technologies, Inc. | Device and method for measurement of beam angle and divergence |
JP4901094B2 (ja) | 2004-11-30 | 2012-03-21 | 株式会社Sen | ビーム照射装置 |
US7488958B2 (en) * | 2005-03-08 | 2009-02-10 | Axcelis Technologies, Inc. | High conductance ion source |
JP5280206B2 (ja) * | 2005-12-07 | 2013-09-04 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | 差動ポンピングを容易にする装置、プロセッサ可読担体およびその方法 |
KR100734308B1 (ko) * | 2006-01-26 | 2007-07-02 | 삼성전자주식회사 | 가변 스크린 어퍼쳐를 갖는 이온 주입 시스템 및 이를이용한 이온 주입 방법 |
KR100732770B1 (ko) * | 2006-02-13 | 2007-06-27 | 주식회사 하이닉스반도체 | 불균일 이온 주입 장비 및 방법 |
CN101467217A (zh) * | 2006-06-13 | 2009-06-24 | 山米奎普公司 | 离子束设备和离子植入的方法 |
WO2007146985A2 (en) * | 2006-06-13 | 2007-12-21 | Semequip, Inc. | Magnetic analyzer apparatus and method for ion implantation |
GB0617498D0 (en) * | 2006-09-06 | 2006-10-18 | Boc Group Plc | Method of pumping gas |
US20080160170A1 (en) * | 2006-12-28 | 2008-07-03 | Varian Semiconductor Equipment Assoicates, Inc. | Technique for using an improved shield ring in plasma-based ion implantation |
US8264173B2 (en) * | 2008-01-09 | 2012-09-11 | Passport Systems, Inc. | Methods and systems for accelerating particles using induction to generate an electric field with a localized curl |
US8169167B2 (en) * | 2008-01-09 | 2012-05-01 | Passport Systems, Inc. | Methods for diagnosing and automatically controlling the operation of a particle accelerator |
US8280684B2 (en) * | 2008-01-09 | 2012-10-02 | Passport Systems, Inc. | Diagnostic methods and apparatus for an accelerator using induction to generate an electric field with a localized curl |
US7858955B2 (en) * | 2008-06-25 | 2010-12-28 | Axcelis Technologies, Inc. | System and method of controlling broad beam uniformity |
US8198610B2 (en) * | 2009-10-20 | 2012-06-12 | Advanced Ion Beam Technology, Inc. | Ion implanter with variable aperture and ion implant method thereof |
US8669539B2 (en) * | 2010-03-29 | 2014-03-11 | Advanced Ion Beam Technology, Inc. | Implant method and implanter by using a variable aperture |
CN102446684A (zh) * | 2010-10-13 | 2012-05-09 | 北京中科信电子装备有限公司 | 一种基于离子注入平行限束光栏的结构 |
KR101769493B1 (ko) * | 2011-12-23 | 2017-08-30 | 주식회사 원익아이피에스 | 기판처리장치 및 그를 가지는 기판처리시스템 |
JP6500009B2 (ja) * | 2013-03-15 | 2019-04-10 | グレン レイン ファミリー リミテッド ライアビリティ リミテッド パートナーシップ | 調節可能な質量分析アパーチャ |
JP6253362B2 (ja) * | 2013-11-21 | 2017-12-27 | 住友重機械イオンテクノロジー株式会社 | 高エネルギーイオン注入装置、ビーム電流調整装置、及びビーム電流調整方法 |
US9496117B2 (en) * | 2014-01-20 | 2016-11-15 | Varian Semiconductor Equipment Associates, Inc. | Two-dimensional mass resolving slit mechanism for semiconductor processing systems |
CN109037015A (zh) * | 2018-08-03 | 2018-12-18 | 德淮半导体有限公司 | 离子植入机及监测方法 |
CN113640853B (zh) * | 2021-07-16 | 2024-05-10 | 中国原子能科学研究院 | 一种用于测量高注量率热中子裂变电离室的靶结构 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2514266C2 (de) * | 1975-03-27 | 1977-04-28 | Siemens Ag | Korpuskularstrahloptisches geraet mit zwei in strahlrichtung aufeinanderfolgenden teilraeumen unterschiedlicher druecke |
US4539217A (en) | 1984-06-27 | 1985-09-03 | Eaton Corporation | Dose control method |
US4922106A (en) | 1986-04-09 | 1990-05-01 | Varian Associates, Inc. | Ion beam scanning method and apparatus |
US4807994A (en) | 1987-11-19 | 1989-02-28 | Varian Associates, Inc. | Method of mapping ion implant dose uniformity |
US4899059A (en) | 1988-05-18 | 1990-02-06 | Varian Associates, Inc. | Disk scanning apparatus for batch ion implanters |
US5146098A (en) | 1991-04-05 | 1992-09-08 | Vlsi Technology, Inc. | Ion beam contamination sensor |
JPH05325858A (ja) * | 1992-05-19 | 1993-12-10 | Hitachi Ltd | 電子顕微鏡等の差動排気絞り機構 |
US5319212A (en) | 1992-10-07 | 1994-06-07 | Genus, Inc. | Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors |
US5350926A (en) | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
US5730801A (en) * | 1994-08-23 | 1998-03-24 | Applied Materials, Inc. | Compartnetalized substrate processing chamber |
US5629528A (en) | 1996-01-16 | 1997-05-13 | Varian Associates, Inc. | Charged particle beam system having beam-defining slit formed by rotating cyclinders |
US5760409A (en) | 1996-06-14 | 1998-06-02 | Eaton Corporation | Dose control for use in an ion implanter |
US5814823A (en) | 1997-07-12 | 1998-09-29 | Eaton Corporation | System and method for setecing neutral particles in an ion bean |
KR20010043738A (ko) * | 1998-05-22 | 2001-05-25 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | 저 에너지 이온 주입을 위한 방법 및 장치 |
JPH11339711A (ja) | 1998-05-29 | 1999-12-10 | Ulvac Corp | イオン注入装置 |
US5998798A (en) | 1998-06-11 | 1999-12-07 | Eaton Corporation | Ion dosage measurement apparatus for an ion beam implanter and method |
JP2000180599A (ja) * | 1998-12-14 | 2000-06-30 | Hitachi Ltd | 電子ビーム処理装置 |
US6194734B1 (en) * | 1999-02-19 | 2001-02-27 | Axcelis Technologies, Inc. | Method and system for operating a variable aperture in an ion implanter |
CN1168116C (zh) * | 2000-04-27 | 2004-09-22 | 香港城市大学 | 采用接地导电栅网的直流等离子体离子注入装置 |
US6323497B1 (en) | 2000-06-02 | 2001-11-27 | Varian Semiconductor Equipment Assoc. | Method and apparatus for controlling ion implantation during vacuum fluctuation |
-
2002
- 2002-01-16 JP JP2002558300A patent/JP3926745B2/ja not_active Expired - Lifetime
- 2002-01-16 CN CNB028050940A patent/CN1322538C/zh not_active Expired - Lifetime
- 2002-01-16 US US10/050,743 patent/US6791097B2/en not_active Expired - Lifetime
- 2002-01-16 EP EP02707495A patent/EP1352411B1/de not_active Expired - Lifetime
- 2002-01-16 KR KR1020037009535A patent/KR100883237B1/ko active IP Right Grant
- 2002-01-16 DE DE60203367T patent/DE60203367T2/de not_active Expired - Fee Related
- 2002-01-16 WO PCT/US2002/001164 patent/WO2002058102A2/en active IP Right Grant
- 2002-01-17 TW TW091100637A patent/TWI250548B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1352411B1 (de) | 2005-03-23 |
JP2004527070A (ja) | 2004-09-02 |
WO2002058102A3 (en) | 2003-03-06 |
CN1322538C (zh) | 2007-06-20 |
KR100883237B1 (ko) | 2009-02-10 |
TWI250548B (en) | 2006-03-01 |
CN1535470A (zh) | 2004-10-06 |
KR20030074716A (ko) | 2003-09-19 |
US6791097B2 (en) | 2004-09-14 |
WO2002058102A2 (en) | 2002-07-25 |
EP1352411A2 (de) | 2003-10-15 |
DE60203367T2 (de) | 2006-04-06 |
JP3926745B2 (ja) | 2007-06-06 |
US20020121613A1 (en) | 2002-09-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |