DE60203367D1 - Justierbare strömungslimitierende öffnung für ionenimplantierungsgeräte - Google Patents

Justierbare strömungslimitierende öffnung für ionenimplantierungsgeräte

Info

Publication number
DE60203367D1
DE60203367D1 DE60203367T DE60203367T DE60203367D1 DE 60203367 D1 DE60203367 D1 DE 60203367D1 DE 60203367 T DE60203367 T DE 60203367T DE 60203367 T DE60203367 T DE 60203367T DE 60203367 D1 DE60203367 D1 DE 60203367D1
Authority
DE
Germany
Prior art keywords
ion implanting
adjustable flow
leveling opening
implanting equipment
equipment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60203367T
Other languages
English (en)
Other versions
DE60203367T2 (de
Inventor
Anthony Renau
David Hermanson
Thomas Scheuer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of DE60203367D1 publication Critical patent/DE60203367D1/de
Application granted granted Critical
Publication of DE60203367T2 publication Critical patent/DE60203367T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/16Vessels; Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/045Diaphragms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18Vacuum control means
    • H01J2237/188Differential pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
DE60203367T 2001-01-18 2002-01-16 Justierbare strömungslimitierende öffnung für ionenimplantierungsgeräte Expired - Fee Related DE60203367T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26259401P 2001-01-18 2001-01-18
US262594P 2001-01-18
PCT/US2002/001164 WO2002058102A2 (en) 2001-01-18 2002-01-16 Adjustable conductance limiting aperture for ion implanters

Publications (2)

Publication Number Publication Date
DE60203367D1 true DE60203367D1 (de) 2005-04-28
DE60203367T2 DE60203367T2 (de) 2006-04-06

Family

ID=22998185

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60203367T Expired - Fee Related DE60203367T2 (de) 2001-01-18 2002-01-16 Justierbare strömungslimitierende öffnung für ionenimplantierungsgeräte

Country Status (8)

Country Link
US (1) US6791097B2 (de)
EP (1) EP1352411B1 (de)
JP (1) JP3926745B2 (de)
KR (1) KR100883237B1 (de)
CN (1) CN1322538C (de)
DE (1) DE60203367T2 (de)
TW (1) TWI250548B (de)
WO (1) WO2002058102A2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7547460B2 (en) * 2000-09-15 2009-06-16 Varian Semiconductor Equipment Associates, Inc. Ion implanter optimizer scan waveform retention and recovery
US20050061997A1 (en) * 2003-09-24 2005-03-24 Benveniste Victor M. Ion beam slit extraction with mass separation
US7102146B2 (en) * 2004-06-03 2006-09-05 Axcelis Technologies, Inc. Dose cup located near bend in final energy filter of serial implanter for closed loop dose control
US6989545B1 (en) * 2004-07-07 2006-01-24 Axcelis Technologies, Inc. Device and method for measurement of beam angle and divergence
JP4901094B2 (ja) 2004-11-30 2012-03-21 株式会社Sen ビーム照射装置
US7488958B2 (en) * 2005-03-08 2009-02-10 Axcelis Technologies, Inc. High conductance ion source
JP5280206B2 (ja) * 2005-12-07 2013-09-04 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド 差動ポンピングを容易にする装置、プロセッサ可読担体およびその方法
KR100734308B1 (ko) * 2006-01-26 2007-07-02 삼성전자주식회사 가변 스크린 어퍼쳐를 갖는 이온 주입 시스템 및 이를이용한 이온 주입 방법
KR100732770B1 (ko) * 2006-02-13 2007-06-27 주식회사 하이닉스반도체 불균일 이온 주입 장비 및 방법
CN101467217A (zh) * 2006-06-13 2009-06-24 山米奎普公司 离子束设备和离子植入的方法
WO2007146985A2 (en) * 2006-06-13 2007-12-21 Semequip, Inc. Magnetic analyzer apparatus and method for ion implantation
GB0617498D0 (en) * 2006-09-06 2006-10-18 Boc Group Plc Method of pumping gas
US20080160170A1 (en) * 2006-12-28 2008-07-03 Varian Semiconductor Equipment Assoicates, Inc. Technique for using an improved shield ring in plasma-based ion implantation
US8264173B2 (en) * 2008-01-09 2012-09-11 Passport Systems, Inc. Methods and systems for accelerating particles using induction to generate an electric field with a localized curl
US8169167B2 (en) * 2008-01-09 2012-05-01 Passport Systems, Inc. Methods for diagnosing and automatically controlling the operation of a particle accelerator
US8280684B2 (en) * 2008-01-09 2012-10-02 Passport Systems, Inc. Diagnostic methods and apparatus for an accelerator using induction to generate an electric field with a localized curl
US7858955B2 (en) * 2008-06-25 2010-12-28 Axcelis Technologies, Inc. System and method of controlling broad beam uniformity
US8198610B2 (en) * 2009-10-20 2012-06-12 Advanced Ion Beam Technology, Inc. Ion implanter with variable aperture and ion implant method thereof
US8669539B2 (en) * 2010-03-29 2014-03-11 Advanced Ion Beam Technology, Inc. Implant method and implanter by using a variable aperture
CN102446684A (zh) * 2010-10-13 2012-05-09 北京中科信电子装备有限公司 一种基于离子注入平行限束光栏的结构
KR101769493B1 (ko) * 2011-12-23 2017-08-30 주식회사 원익아이피에스 기판처리장치 및 그를 가지는 기판처리시스템
JP6500009B2 (ja) * 2013-03-15 2019-04-10 グレン レイン ファミリー リミテッド ライアビリティ リミテッド パートナーシップ 調節可能な質量分析アパーチャ
JP6253362B2 (ja) * 2013-11-21 2017-12-27 住友重機械イオンテクノロジー株式会社 高エネルギーイオン注入装置、ビーム電流調整装置、及びビーム電流調整方法
US9496117B2 (en) * 2014-01-20 2016-11-15 Varian Semiconductor Equipment Associates, Inc. Two-dimensional mass resolving slit mechanism for semiconductor processing systems
CN109037015A (zh) * 2018-08-03 2018-12-18 德淮半导体有限公司 离子植入机及监测方法
CN113640853B (zh) * 2021-07-16 2024-05-10 中国原子能科学研究院 一种用于测量高注量率热中子裂变电离室的靶结构

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2514266C2 (de) * 1975-03-27 1977-04-28 Siemens Ag Korpuskularstrahloptisches geraet mit zwei in strahlrichtung aufeinanderfolgenden teilraeumen unterschiedlicher druecke
US4539217A (en) 1984-06-27 1985-09-03 Eaton Corporation Dose control method
US4922106A (en) 1986-04-09 1990-05-01 Varian Associates, Inc. Ion beam scanning method and apparatus
US4807994A (en) 1987-11-19 1989-02-28 Varian Associates, Inc. Method of mapping ion implant dose uniformity
US4899059A (en) 1988-05-18 1990-02-06 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
US5146098A (en) 1991-04-05 1992-09-08 Vlsi Technology, Inc. Ion beam contamination sensor
JPH05325858A (ja) * 1992-05-19 1993-12-10 Hitachi Ltd 電子顕微鏡等の差動排気絞り機構
US5319212A (en) 1992-10-07 1994-06-07 Genus, Inc. Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors
US5350926A (en) 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
US5730801A (en) * 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
US5629528A (en) 1996-01-16 1997-05-13 Varian Associates, Inc. Charged particle beam system having beam-defining slit formed by rotating cyclinders
US5760409A (en) 1996-06-14 1998-06-02 Eaton Corporation Dose control for use in an ion implanter
US5814823A (en) 1997-07-12 1998-09-29 Eaton Corporation System and method for setecing neutral particles in an ion bean
KR20010043738A (ko) * 1998-05-22 2001-05-25 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 저 에너지 이온 주입을 위한 방법 및 장치
JPH11339711A (ja) 1998-05-29 1999-12-10 Ulvac Corp イオン注入装置
US5998798A (en) 1998-06-11 1999-12-07 Eaton Corporation Ion dosage measurement apparatus for an ion beam implanter and method
JP2000180599A (ja) * 1998-12-14 2000-06-30 Hitachi Ltd 電子ビーム処理装置
US6194734B1 (en) * 1999-02-19 2001-02-27 Axcelis Technologies, Inc. Method and system for operating a variable aperture in an ion implanter
CN1168116C (zh) * 2000-04-27 2004-09-22 香港城市大学 采用接地导电栅网的直流等离子体离子注入装置
US6323497B1 (en) 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation

Also Published As

Publication number Publication date
EP1352411B1 (de) 2005-03-23
JP2004527070A (ja) 2004-09-02
WO2002058102A3 (en) 2003-03-06
CN1322538C (zh) 2007-06-20
KR100883237B1 (ko) 2009-02-10
TWI250548B (en) 2006-03-01
CN1535470A (zh) 2004-10-06
KR20030074716A (ko) 2003-09-19
US6791097B2 (en) 2004-09-14
WO2002058102A2 (en) 2002-07-25
EP1352411A2 (de) 2003-10-15
DE60203367T2 (de) 2006-04-06
JP3926745B2 (ja) 2007-06-06
US20020121613A1 (en) 2002-09-05

Similar Documents

Publication Publication Date Title
DE60203367D1 (de) Justierbare strömungslimitierende öffnung für ionenimplantierungsgeräte
DE60238201D1 (de) Radiotherapeutische vorrichtung
DE60217613D1 (de) Schaltgerät
DE60232843D1 (de) Implantat für Knochenverbindungsvorrichtung
DE60214348D1 (de) Schneidegerät für sklerotikaimplantate
DE60232844D1 (de) Implantat für Knochenverbindungsvorrichtung
DE60115295D1 (de) Gefässversiegelnde vorrichtung
DE60201775D1 (de) Leistungsschalter
DE50206440D1 (de) Erntebergungseinrichtung
DE60217704D1 (de) Verbesserte endoprothetische vorrichtung
DE60034985D1 (de) Ionen-Implantationsgerät
DE60204286D1 (de) Implantierbare vorrichtung
AU2002305449A8 (en) Ion trap
DE60140787D1 (de) ion
DE60217022D1 (de) Dielektrische Vorrichtung
GB2400727A8 (en) Low vibration wafer stage for ion implantation
GB0226825D0 (en) Ion Source
SG94874A1 (en) Faraday device
DE50105245D1 (de) Manuell bewegbarer Gurthobel
DE60221447D1 (de) Trennmodul
DE60037889D1 (de) Ionbehandlung für Schmuckgegenstand
DE60229515D1 (de) Ionenstrahl vorrichtung
DE50209601D1 (de) Gasdichter kanal
FR2828955B1 (fr) Disjoncteur
DE60208644D1 (de) Doppelfernrohr

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee