SG94874A1 - Faraday device - Google Patents

Faraday device

Info

Publication number
SG94874A1
SG94874A1 SG200202582A SG200202582A SG94874A1 SG 94874 A1 SG94874 A1 SG 94874A1 SG 200202582 A SG200202582 A SG 200202582A SG 200202582 A SG200202582 A SG 200202582A SG 94874 A1 SG94874 A1 SG 94874A1
Authority
SG
Singapore
Prior art keywords
faraday device
faraday
Prior art date
Application number
SG200202582A
Inventor
Inouchi Yutaka
Maeno Shuichi
Ando Yasunori
Matsuda Yasuhiro
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Publication of SG94874A1 publication Critical patent/SG94874A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measurement Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
SG200202582A 2001-05-01 2002-04-30 Faraday device SG94874A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001134096A JP3593993B2 (en) 2001-05-01 2001-05-01 Faraday device

Publications (1)

Publication Number Publication Date
SG94874A1 true SG94874A1 (en) 2003-03-18

Family

ID=18981845

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200202582A SG94874A1 (en) 2001-05-01 2002-04-30 Faraday device

Country Status (5)

Country Link
JP (1) JP3593993B2 (en)
KR (1) KR100482899B1 (en)
CN (1) CN1210756C (en)
SG (1) SG94874A1 (en)
TW (1) TWI258790B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4562485B2 (en) * 2004-10-13 2010-10-13 株式会社アルバック Ion implanter
US7170067B2 (en) * 2005-02-16 2007-01-30 Varian Semiconductor Equipment Associates, Inc. Ion beam measurement apparatus and method
JP4605146B2 (en) * 2006-11-16 2011-01-05 日新イオン機器株式会社 Ion beam measurement device
JP2008235044A (en) * 2007-03-22 2008-10-02 Ihi Corp Beam profile monitor
JP5195789B2 (en) * 2010-03-09 2013-05-15 日新イオン機器株式会社 Ion beam irradiation equipment
JP5527617B2 (en) * 2011-01-08 2014-06-18 日新イオン機器株式会社 Ion source
CN108181641B (en) * 2018-01-04 2019-10-11 北京航空航天大学 Faraday probe
CN108121004B (en) * 2018-01-05 2019-05-24 北京航空航天大学 Faraday probe
JP7332437B2 (en) 2019-11-01 2023-08-23 住友重機械イオンテクノロジー株式会社 ion implanter
CN112397367B (en) * 2020-11-02 2024-04-16 北京北方华创微电子装备有限公司 Semiconductor processing equipment and Faraday cup thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59163745A (en) * 1983-03-07 1984-09-14 Hitachi Tokyo Electronics Co Ltd Ion implantation apparatus
JPS61227357A (en) * 1985-03-30 1986-10-09 Toshiba Corp Ion implantation equipment
WO2002023582A2 (en) * 2000-09-15 2002-03-21 Varian Semiconductor Equipment Associates, Inc. Faraday system for ion implanters

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5691537A (en) * 1996-01-22 1997-11-25 Chen; John Method and apparatus for ion beam transport
JPH11154485A (en) * 1997-11-19 1999-06-08 Nissin Electric Co Ltd Mass spectrograph and ion implantation device equipped with it

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59163745A (en) * 1983-03-07 1984-09-14 Hitachi Tokyo Electronics Co Ltd Ion implantation apparatus
JPS61227357A (en) * 1985-03-30 1986-10-09 Toshiba Corp Ion implantation equipment
WO2002023582A2 (en) * 2000-09-15 2002-03-21 Varian Semiconductor Equipment Associates, Inc. Faraday system for ion implanters

Also Published As

Publication number Publication date
KR20020084692A (en) 2002-11-09
JP3593993B2 (en) 2004-11-24
CN1384525A (en) 2002-12-11
KR100482899B1 (en) 2005-04-14
JP2002329472A (en) 2002-11-15
CN1210756C (en) 2005-07-13
TWI258790B (en) 2006-07-21

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