DE60201203T2 - Kaschierter Leseleiter für eine Tunnelübergang-Speicherzelle - Google Patents

Kaschierter Leseleiter für eine Tunnelübergang-Speicherzelle Download PDF

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Publication number
DE60201203T2
DE60201203T2 DE60201203T DE60201203T DE60201203T2 DE 60201203 T2 DE60201203 T2 DE 60201203T2 DE 60201203 T DE60201203 T DE 60201203T DE 60201203 T DE60201203 T DE 60201203T DE 60201203 T2 DE60201203 T2 DE 60201203T2
Authority
DE
Germany
Prior art keywords
layer
data
magnetic
read
tunnel junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60201203T
Other languages
German (de)
English (en)
Other versions
DE60201203D1 (de
Inventor
Manish Sharma
Lung T. Tran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Hewlett Packard Development Co LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co LP filed Critical Hewlett Packard Development Co LP
Publication of DE60201203D1 publication Critical patent/DE60201203D1/de
Application granted granted Critical
Publication of DE60201203T2 publication Critical patent/DE60201203T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
DE60201203T 2001-04-02 2002-03-27 Kaschierter Leseleiter für eine Tunnelübergang-Speicherzelle Expired - Lifetime DE60201203T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/825,093 US6538920B2 (en) 2001-04-02 2001-04-02 Cladded read conductor for a pinned-on-the-fly soft reference layer
US825093 2001-04-02

Publications (2)

Publication Number Publication Date
DE60201203D1 DE60201203D1 (de) 2004-10-21
DE60201203T2 true DE60201203T2 (de) 2005-09-22

Family

ID=25243091

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60201203T Expired - Lifetime DE60201203T2 (de) 2001-04-02 2002-03-27 Kaschierter Leseleiter für eine Tunnelübergang-Speicherzelle

Country Status (7)

Country Link
US (1) US6538920B2 (zh)
EP (1) EP1248273B1 (zh)
JP (1) JP3942930B2 (zh)
KR (1) KR100816747B1 (zh)
CN (1) CN1379485A (zh)
DE (1) DE60201203T2 (zh)
TW (1) TW541529B (zh)

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US6504221B1 (en) * 2001-09-25 2003-01-07 Hewlett-Packard Company Magneto-resistive device including soft reference layer having embedded conductors
JP2003151262A (ja) * 2001-11-15 2003-05-23 Toshiba Corp 磁気ランダムアクセスメモリ
US6661688B2 (en) * 2001-12-05 2003-12-09 Hewlett-Packard Development Company, L.P. Method and article for concentrating fields at sense layers
US6750491B2 (en) * 2001-12-20 2004-06-15 Hewlett-Packard Development Company, L.P. Magnetic memory device having soft reference layer
US6525957B1 (en) * 2001-12-21 2003-02-25 Motorola, Inc. Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof
US6815248B2 (en) * 2002-04-18 2004-11-09 Infineon Technologies Ag Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in MRAM processing
US6780653B2 (en) * 2002-06-06 2004-08-24 Micron Technology, Inc. Methods of forming magnetoresistive memory device assemblies
US6683815B1 (en) * 2002-06-26 2004-01-27 Silicon Magnetic Systems Magnetic memory cell and method for assigning tunable writing currents
US6806523B2 (en) 2002-07-15 2004-10-19 Micron Technology, Inc. Magnetoresistive memory devices
US20040012802A1 (en) * 2002-07-17 2004-01-22 Allen Kram H. System and method for printing a data file
US6885576B2 (en) * 2002-08-13 2005-04-26 Micron Technology, Inc. Closed flux magnetic memory
JP3788964B2 (ja) * 2002-09-10 2006-06-21 株式会社東芝 磁気ランダムアクセスメモリ
US6870758B2 (en) * 2002-10-30 2005-03-22 Hewlett-Packard Development Company, L.P. Magnetic memory device and methods for making same
JP3906145B2 (ja) * 2002-11-22 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
JP4720067B2 (ja) * 2003-01-24 2011-07-13 Ｔｄｋ株式会社 磁気記憶セルおよび磁気メモリデバイスならびに磁気メモリデバイスの製造方法
DE10309244A1 (de) * 2003-03-03 2004-09-23 Siemens Ag Magnetisches Speicherelement, insbesondere MRAM-Element, mit einem TMR-Dünnschichtensystem
JP4283011B2 (ja) * 2003-03-13 2009-06-24 Ｔｄｋ株式会社 磁気メモリデバイスおよびその読出方法
US6963500B2 (en) * 2003-03-14 2005-11-08 Applied Spintronics Technology, Inc. Magnetic tunneling junction cell array with shared reference layer for MRAM applications
JP4365604B2 (ja) 2003-03-24 2009-11-18 Ｔｄｋ株式会社 磁気メモリデバイスおよびセンスアンプ回路、ならびに磁気メモリデバイスの読出方法
US7067866B2 (en) * 2003-03-31 2006-06-27 Applied Spintronics Technology, Inc. MRAM architecture and a method and system for fabricating MRAM memories utilizing the architecture
US6921953B2 (en) * 2003-04-09 2005-07-26 Micron Technology, Inc. Self-aligned, low-resistance, efficient MRAM read/write conductors
US6982445B2 (en) * 2003-05-05 2006-01-03 Applied Spintronics Technology, Inc. MRAM architecture with a bit line located underneath the magnetic tunneling junction device
JP4556385B2 (ja) * 2003-05-27 2010-10-06 Ｔｄｋ株式会社 磁気メモリデバイスの製造方法
US6819587B1 (en) * 2003-06-12 2004-11-16 Hewlett-Packard Development Company, L.P. Thermal-assisted nanotip magnetic memory storage device
US6885582B2 (en) * 2003-06-12 2005-04-26 Hewlett-Packard Development Company, L.P. Magnetic memory storage device
US7161875B2 (en) * 2003-06-12 2007-01-09 Hewlett-Packard Development Company, L.P. Thermal-assisted magnetic memory storage device
US7078239B2 (en) * 2003-09-05 2006-07-18 Micron Technology, Inc. Integrated circuit structure formed by damascene process
US7027320B2 (en) * 2003-10-21 2006-04-11 Hewlett-Packard Development Company, L.P. Soft-reference magnetic memory digitized device and method of operation
KR101001742B1 (ko) 2003-10-24 2010-12-15 삼성전자주식회사 자기 램 및 그 제조방법
US7026673B2 (en) * 2003-12-11 2006-04-11 International Business Machines Corporation Low magnetization materials for high performance magnetic memory devices
US6980466B2 (en) * 2004-01-15 2005-12-27 Hewlett-Packard Development Company, L.P. Soft-reference four conductor magnetic memory storage device
US7102920B2 (en) * 2004-03-23 2006-09-05 Hewlett-Packard Development Company, L.P. Soft-reference three conductor magnetic memory storage device
KR100684893B1 (ko) * 2005-03-28 2007-02-20 삼성전자주식회사 자기 메모리 장치 및 그 제조방법
US7444738B2 (en) * 2005-07-29 2008-11-04 Everspin Technologies, Inc. Method for tunnel junction sensor with magnetic cladding
US20090027948A1 (en) * 2007-07-24 2009-01-29 Manfred Ruehrig Integrated Circuits, Method of Programming a Cell, Thermal Select Magnetoresistive Element, Memory Module
CN101472455A (zh) * 2007-12-29 2009-07-01 3M创新有限公司 电磁屏蔽衬垫和用于填充电磁屏蔽系统中的间隙的方法
US7760542B2 (en) 2008-04-21 2010-07-20 Seagate Technology Llc Spin-torque memory with unidirectional write scheme
US8233319B2 (en) 2008-07-18 2012-07-31 Seagate Technology Llc Unipolar spin-transfer switching memory unit
US7804709B2 (en) 2008-07-18 2010-09-28 Seagate Technology Llc Diode assisted switching spin-transfer torque memory unit
US8223532B2 (en) * 2008-08-07 2012-07-17 Seagate Technology Llc Magnetic field assisted STRAM cells
US8054677B2 (en) 2008-08-07 2011-11-08 Seagate Technology Llc Magnetic memory with strain-assisted exchange coupling switch
US7746687B2 (en) 2008-09-30 2010-06-29 Seagate Technology, Llc Thermally assisted multi-bit MRAM
US8487390B2 (en) 2008-10-08 2013-07-16 Seagate Technology Llc Memory cell with stress-induced anisotropy
US7933137B2 (en) * 2008-10-08 2011-04-26 Seagate Teachnology Llc Magnetic random access memory (MRAM) utilizing magnetic flip-flop structures
US8217478B2 (en) 2008-10-10 2012-07-10 Seagate Technology Llc Magnetic stack with oxide to reduce switching current
US7940592B2 (en) * 2008-12-02 2011-05-10 Seagate Technology Llc Spin-torque bit cell with unpinned reference layer and unidirectional write current
US8791043B2 (en) * 2008-12-31 2014-07-29 Samsung Electronics Co., Ltd. Ordered mesoporous carbon composite catalyst, method of manufacturing the same, and fuel cell using the same
US7833806B2 (en) * 2009-01-30 2010-11-16 Everspin Technologies, Inc. Structure and method for fabricating cladded conductive lines in magnetic memories
US8053255B2 (en) 2009-03-03 2011-11-08 Seagate Technology Llc STRAM with compensation element and method of making the same
JP6219200B2 (ja) * 2014-02-27 2017-10-25 株式会社東芝 磁気装置
US9444036B1 (en) * 2015-08-25 2016-09-13 HGST Netherlands B.V. Implementing segregated media based magnetic memory
JP2017143175A (ja) * 2016-02-10 2017-08-17 株式会社東芝 磁気記憶装置

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EP0875901B1 (en) 1997-04-28 2006-08-09 Canon Kabushiki Kaisha Magnetic thin-film memory element utilizing GMR effect, and magnetic thin-film memory
US6111784A (en) 1997-09-18 2000-08-29 Canon Kabushiki Kaisha Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element
US6196930B1 (en) 1997-11-12 2001-03-06 Randy T. Aumock Extension apparatus for golf club
US6169686B1 (en) 1997-11-20 2001-01-02 Hewlett-Packard Company Solid-state memory with magnetic storage cells
US5982660A (en) 1998-08-27 1999-11-09 Hewlett-Packard Company Magnetic memory cell with off-axis reference layer orientation for improved response
US6072717A (en) 1998-09-04 2000-06-06 Hewlett Packard Stabilized magnetic memory cell
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US6172901B1 (en) 1999-12-30 2001-01-09 Stmicroelectronics, S.R.L. Low power static random access memory and method for writing to same

Also Published As

Publication number Publication date
KR100816747B1 (ko) 2008-03-26
EP1248273A3 (en) 2002-12-11
DE60201203D1 (de) 2004-10-21
EP1248273B1 (en) 2004-09-15
KR20030009097A (ko) 2003-01-29
CN1379485A (zh) 2002-11-13
US6538920B2 (en) 2003-03-25
JP3942930B2 (ja) 2007-07-11
JP2003030976A (ja) 2003-01-31
US20020186582A1 (en) 2002-12-12
EP1248273A2 (en) 2002-10-09
TW541529B (en) 2003-07-11

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Legal Events

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8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: KUHNEN & WACKER PATENT- UND RECHTSANWALTSBUERO, 85

8327 Change in the person/name/address of the patent owner

Owner name: SAMSUNG ELECTRONICS CO., LTD., SUWON, GYEONGGI, KR