DE602008005197D1 - Zusammensetzung mit Thiazolringen, organisches Halbleiterpolymer mit der Zusammensetzung, organisch aktive Schicht mit dem organischen Halbleiterpolymer, organischer Dünnfilmtransistor mit der organisch aktiven Schicht, elektronische Vorrichtung mit dem organischen Dünnfilmtransistor und Herstellungsverfahren dafür - Google Patents

Zusammensetzung mit Thiazolringen, organisches Halbleiterpolymer mit der Zusammensetzung, organisch aktive Schicht mit dem organischen Halbleiterpolymer, organischer Dünnfilmtransistor mit der organisch aktiven Schicht, elektronische Vorrichtung mit dem organischen Dünnfilmtransistor und Herstellungsverfahren dafür

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Publication number
DE602008005197D1
DE602008005197D1 DE602008005197T DE602008005197T DE602008005197D1 DE 602008005197 D1 DE602008005197 D1 DE 602008005197D1 DE 602008005197 T DE602008005197 T DE 602008005197T DE 602008005197 T DE602008005197 T DE 602008005197T DE 602008005197 D1 DE602008005197 D1 DE 602008005197D1
Authority
DE
Germany
Prior art keywords
organic
thin film
film transistor
active layer
semiconductor polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008005197T
Other languages
English (en)
Inventor
Bang Lin Lee
Eun Kyung Lee
Joo Young Kim
Kook Min Han
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602008005197D1 publication Critical patent/DE602008005197D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D417/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00
    • C07D417/02—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00 containing two hetero rings
    • C07D417/04—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00 containing two hetero rings directly linked by a ring-member-to-ring-member bond
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D417/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00
    • C07D417/14—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00 containing three or more hetero rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D421/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having selenium, tellurium, or halogen atoms as ring hetero atoms
    • C07D421/14—Heterocyclic compounds containing two or more hetero rings, at least one ring having selenium, tellurium, or halogen atoms as ring hetero atoms containing three or more hetero rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
DE602008005197T 2007-01-24 2008-01-23 Zusammensetzung mit Thiazolringen, organisches Halbleiterpolymer mit der Zusammensetzung, organisch aktive Schicht mit dem organischen Halbleiterpolymer, organischer Dünnfilmtransistor mit der organisch aktiven Schicht, elektronische Vorrichtung mit dem organischen Dünnfilmtransistor und Herstellungsverfahren dafür Active DE602008005197D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070007500A KR101430260B1 (ko) 2007-01-24 2007-01-24 티아졸 함유 유기반도체 고분자, 이의 제조방법 및 이를이용한 유기박막트랜지스터

Publications (1)

Publication Number Publication Date
DE602008005197D1 true DE602008005197D1 (de) 2011-04-14

Family

ID=39276039

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008005197T Active DE602008005197D1 (de) 2007-01-24 2008-01-23 Zusammensetzung mit Thiazolringen, organisches Halbleiterpolymer mit der Zusammensetzung, organisch aktive Schicht mit dem organischen Halbleiterpolymer, organischer Dünnfilmtransistor mit der organisch aktiven Schicht, elektronische Vorrichtung mit dem organischen Dünnfilmtransistor und Herstellungsverfahren dafür

Country Status (5)

Country Link
US (2) US8026369B2 (de)
EP (1) EP1953155B1 (de)
KR (1) KR101430260B1 (de)
CN (1) CN101255156B (de)
DE (1) DE602008005197D1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101450137B1 (ko) 2008-01-25 2014-10-13 삼성전자주식회사 유기반도체용 공중합체 및 이를 이용한 유기박막트랜지스터 및 유기 전자소자
US9166168B2 (en) * 2012-12-24 2015-10-20 Samsung Electronics Co., Ltd. Organic semiconductor polymer, organic thin film transistor, and electronic device
KR101855404B1 (ko) * 2017-02-20 2018-06-08 포항공과대학교 산학협력단 유기반도체 화합물 및 그를 포함하는 유기전자소자

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2240230B (en) * 1990-01-18 1994-04-13 British Broadcasting Corp Field-rate upconversion of television signals
US5625199A (en) 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
US6107117A (en) * 1996-12-20 2000-08-22 Lucent Technologies Inc. Method of making an organic thin film transistor
US5946551A (en) 1997-03-25 1999-08-31 Dimitrakopoulos; Christos Dimitrios Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric
US6215130B1 (en) 1998-08-20 2001-04-10 Lucent Technologies Inc. Thin film transistors
US6166172A (en) 1999-02-10 2000-12-26 Carnegie Mellon University Method of forming poly-(3-substituted) thiophenes
WO2000079617A1 (en) 1999-06-21 2000-12-28 Cambridge University Technical Services Limited Aligned polymers for an organic tft
US6452207B1 (en) 2001-03-30 2002-09-17 Lucent Technologies Inc. Organic semiconductor devices
JP2004165257A (ja) * 2002-11-11 2004-06-10 Konica Minolta Holdings Inc 有機薄膜トランジスタ素子
KR100572926B1 (ko) * 2002-12-26 2006-04-24 삼성전자주식회사 폴리티에닐티아졸 유도체 및 이를 이용한 유기박막트랜지스터
KR101007787B1 (ko) 2003-12-08 2011-01-14 삼성전자주식회사 퀴녹살린환을 주쇄에 포함하는 유기박막 트랜지스터용유기반도체 고분자
US7709829B2 (en) * 2004-01-26 2010-05-04 Konica Minolta Holdings, Inc. Organic semiconductor material, organic transistor, field effect transistor, switching device and thiazole compound
KR101069519B1 (ko) 2004-07-08 2011-09-30 삼성전자주식회사 올리고티오펜과 ｎ-형 방향족 화합물을 주쇄에 교호로 포함하는 유기 반도체 고분자
JPWO2006038459A1 (ja) 2004-10-01 2008-05-15 コニカミノルタホールディングス株式会社 有機薄膜トランジスタ材料、有機薄膜トランジスタ、電界効果トランジスタ及びスイッチング素子
JP2006241359A (ja) 2005-03-04 2006-09-14 Mitsubishi Chemicals Corp 導電性交互共重合体及びその製造方法、並びにそれを用いた有機電子デバイス及び電界効果トランジスタ
US8148543B2 (en) * 2006-10-16 2012-04-03 Canon Kabushiki Kaisha Organic semiconductor material and organic thin-film transistor
KR101450137B1 (ko) * 2008-01-25 2014-10-13 삼성전자주식회사 유기반도체용 공중합체 및 이를 이용한 유기박막트랜지스터 및 유기 전자소자

Also Published As

Publication number Publication date
CN101255156B (zh) 2013-04-03
US8026369B2 (en) 2011-09-27
US20080191201A1 (en) 2008-08-14
KR20080069813A (ko) 2008-07-29
EP1953155A3 (de) 2008-09-24
US8154016B2 (en) 2012-04-10
CN101255156A (zh) 2008-09-03
KR101430260B1 (ko) 2014-08-14
US20110209762A1 (en) 2011-09-01
EP1953155A2 (de) 2008-08-06
EP1953155B1 (de) 2011-03-02

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