DE602007013765D1 - Speicherschaltung mit einer referenz zum lesen - Google Patents

Speicherschaltung mit einer referenz zum lesen

Info

Publication number
DE602007013765D1
DE602007013765D1 DE602007013765T DE602007013765T DE602007013765D1 DE 602007013765 D1 DE602007013765 D1 DE 602007013765D1 DE 602007013765 T DE602007013765 T DE 602007013765T DE 602007013765 T DE602007013765 T DE 602007013765T DE 602007013765 D1 DE602007013765 D1 DE 602007013765D1
Authority
DE
Germany
Prior art keywords
read
memory circuit
memory
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007013765T
Other languages
English (en)
Inventor
Jon S Choy
Tahmina Akhter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of DE602007013765D1 publication Critical patent/DE602007013765D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/026—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers
DE602007013765T 2006-07-28 2007-05-03 Speicherschaltung mit einer referenz zum lesen Active DE602007013765D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/460,745 US7471582B2 (en) 2006-07-28 2006-07-28 Memory circuit using a reference for sensing
PCT/US2007/068100 WO2008014033A2 (en) 2006-07-28 2007-05-03 Memory circuit using a reference for sensing

Publications (1)

Publication Number Publication Date
DE602007013765D1 true DE602007013765D1 (de) 2011-05-19

Family

ID=38982157

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007013765T Active DE602007013765D1 (de) 2006-07-28 2007-05-03 Speicherschaltung mit einer referenz zum lesen

Country Status (8)

Country Link
US (1) US7471582B2 (de)
EP (1) EP2050097B1 (de)
JP (1) JP2009545098A (de)
KR (1) KR20090033879A (de)
CN (1) CN101496108A (de)
DE (1) DE602007013765D1 (de)
TW (1) TW200807430A (de)
WO (1) WO2008014033A2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7986579B2 (en) * 2008-02-13 2011-07-26 Spansion Llc Memory device and method thereof
CN101630532B (zh) * 2008-07-17 2012-07-11 上海华虹Nec电子有限公司 用于电可擦除可编程只读存储器的灵敏放大器及实现方法
US8027187B2 (en) 2008-09-12 2011-09-27 Micron Technology, Inc. Memory sensing devices, methods, and systems
IN2012DN01947A (de) 2009-08-07 2015-08-21 Auckland Uniservices Ltd
KR20110046808A (ko) * 2009-10-29 2011-05-06 삼성전자주식회사 상 변화 메모리 장치의 데이터 리드 회로 및 이를 포함하는 장치들
US8743641B2 (en) * 2011-09-07 2014-06-03 Macronix International Co., Ltd. Memory with temperature compensation
JP2015508940A (ja) 2012-02-16 2015-03-23 オークランド ユニサービシズ リミテッドAuckland Uniservices Limited 複数コイル磁束パッド
CN103366791B (zh) * 2012-03-30 2017-04-12 硅存储技术公司 即时可调整读出放大器
US10529883B2 (en) * 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
US9595340B2 (en) * 2015-01-20 2017-03-14 Taiwan Semiconductor Manufacturing Company Limited Nonvolatile memory device and method of setting a reference current in a nonvolatile memory device
JP6434344B2 (ja) * 2015-03-17 2018-12-05 ルネサスエレクトロニクス株式会社 半導体装置
WO2016150486A1 (en) * 2015-03-24 2016-09-29 Epcos Ag Charge pump assembly
US9691491B2 (en) * 2015-09-18 2017-06-27 Texas Instruments Incorporated Methods and apparatus to track bit cell current using temperature and voltage dependent reference currents
KR20180046580A (ko) * 2016-10-28 2018-05-09 에스케이하이닉스 주식회사 전자 장치
CN108109660A (zh) * 2016-11-24 2018-06-01 北京兆易创新科技股份有限公司 一种存储单元的读取方法及装置
KR102532204B1 (ko) * 2017-09-15 2023-05-16 삼성전자 주식회사 레퍼런스 셀을 포함하는 저항성 메모리 장치 및 그것의 동작 방법
CN109841255B (zh) * 2017-11-29 2020-12-01 北京兆易创新科技股份有限公司 闪存参考电流的温度系数的选择方法及装置
KR102523129B1 (ko) 2018-06-08 2023-04-20 삼성전자주식회사 읽기/프로그램/소거 전압을 생성하기 위한 보상 회로
US11940831B2 (en) * 2021-12-07 2024-03-26 Infineon Technologies LLC Current generator for memory sensing

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6697283B2 (en) * 2001-01-03 2004-02-24 Micron Technology, Inc. Temperature and voltage compensated reference current generator
US6801454B2 (en) * 2002-10-01 2004-10-05 Sandisk Corporation Voltage generation circuitry having temperature compensation
DE60227534D1 (de) * 2002-11-18 2008-08-21 St Microelectronics Srl Schaltung und Anordnung zur Tempeaturüberwachung von chalcogenische Elementen, insbesondere von Phasenänderungsspeicherelementen
US7057958B2 (en) * 2003-09-30 2006-06-06 Sandisk Corporation Method and system for temperature compensation for memory cells with temperature-dependent behavior
US7551489B2 (en) * 2005-12-28 2009-06-23 Intel Corporation Multi-level memory cell sensing

Also Published As

Publication number Publication date
JP2009545098A (ja) 2009-12-17
TW200807430A (en) 2008-02-01
US7471582B2 (en) 2008-12-30
US20080025111A1 (en) 2008-01-31
CN101496108A (zh) 2009-07-29
EP2050097B1 (de) 2011-04-06
KR20090033879A (ko) 2009-04-06
EP2050097A2 (de) 2009-04-22
EP2050097A4 (de) 2010-01-06
WO2008014033A3 (en) 2008-11-06
WO2008014033A2 (en) 2008-01-31

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