DE602007013494D1 - Mehrweg-Doherty-Verstärker und Steuerungsverfahren für einen Mehrweg-Doherty-Verstärker - Google Patents

Mehrweg-Doherty-Verstärker und Steuerungsverfahren für einen Mehrweg-Doherty-Verstärker

Info

Publication number
DE602007013494D1
DE602007013494D1 DE602007013494T DE602007013494T DE602007013494D1 DE 602007013494 D1 DE602007013494 D1 DE 602007013494D1 DE 602007013494 T DE602007013494 T DE 602007013494T DE 602007013494 T DE602007013494 T DE 602007013494T DE 602007013494 D1 DE602007013494 D1 DE 602007013494D1
Authority
DE
Germany
Prior art keywords
reusable
doherty amplifier
control method
doherty
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007013494T
Other languages
English (en)
Inventor
Jun Youl Lim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ericsson LG Co Ltd
Original Assignee
LG Ericsson Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Ericsson Co Ltd filed Critical LG Ericsson Co Ltd
Publication of DE602007013494D1 publication Critical patent/DE602007013494D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/04Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers
    • H03F1/06Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers to raise the efficiency of amplifying modulated radio frequency waves; to raise the efficiency of amplifiers acting also as modulators
    • H03F1/07Doherty-type amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/18Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/222A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/387A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21109An input signal being distributed by switching to a plurality of paralleled power amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21145Output signals are combined by switching a plurality of paralleled power amplifiers to a common output

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
DE602007013494T 2006-08-11 2007-07-24 Mehrweg-Doherty-Verstärker und Steuerungsverfahren für einen Mehrweg-Doherty-Verstärker Active DE602007013494D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060076309A KR101083920B1 (ko) 2006-08-11 2006-08-11 다중 입출력 경로 도허티 증폭기

Publications (1)

Publication Number Publication Date
DE602007013494D1 true DE602007013494D1 (de) 2011-05-12

Family

ID=38820199

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007013494T Active DE602007013494D1 (de) 2006-08-11 2007-07-24 Mehrweg-Doherty-Verstärker und Steuerungsverfahren für einen Mehrweg-Doherty-Verstärker

Country Status (4)

Country Link
US (1) US7498878B2 (de)
EP (1) EP1887686B1 (de)
KR (1) KR101083920B1 (de)
DE (1) DE602007013494D1 (de)

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JP4836253B2 (ja) * 2006-09-01 2011-12-14 ソニー・エリクソン・モバイルコミュニケーションズ株式会社 電力増幅装置および携帯電話端末
US7579909B2 (en) * 2007-07-12 2009-08-25 Infineon Technologies Ag Bypass circuit for radio-frequency amplifier stages
CN101904089B (zh) * 2007-12-21 2012-10-31 Nxp股份有限公司 具有最小输出网络的3路Doherty放大器
ATE525801T1 (de) * 2008-01-29 2011-10-15 Nxp Bv Schaltkreis mit einem leistungsverstärker und verstärkungsverfahren
JP2009225077A (ja) * 2008-03-17 2009-10-01 Hitachi Kokusai Electric Inc Linc方式の増幅装置
WO2009119665A1 (ja) * 2008-03-27 2009-10-01 三菱電機株式会社 衛星通信装置用電力増幅装置
US7804365B2 (en) * 2008-11-07 2010-09-28 Epcos Ag Multilayer amplifier module
US8008968B2 (en) * 2009-12-03 2011-08-30 Texas Instruments Incorporated Multipath amplifier
EP2339746B1 (de) * 2009-12-15 2013-02-20 Nxp B.V. Doherty-Verstärker mit zusammengesetzter Übertragungseigenschaft mit mehreren Spitzenverstärkern
DE102010034067A1 (de) * 2010-08-12 2012-02-16 Rohde & Schwarz Gmbh & Co. Kg Hochfrequenzleistungsverstärker mit Doherty-Erweiterung
CN102158184A (zh) * 2011-04-29 2011-08-17 中兴通讯股份有限公司 一种功率放大管以及功率放大方法
CN102158175A (zh) * 2011-04-29 2011-08-17 中兴通讯股份有限公司 一种功率放大管以及功率放大方法
CN102761310B (zh) 2011-04-29 2015-06-10 中兴通讯股份有限公司 一种多合体功率放大器及其实现方法
CN102185571A (zh) * 2011-04-29 2011-09-14 中兴通讯股份有限公司 峰值放大器的导通控制方法、装置及多合体功率放大器
WO2013086658A1 (en) * 2011-12-15 2013-06-20 Telefonaktiebolaget L M Ericsson (Publ) Doherty power amplification apparatus and method
US9031158B2 (en) * 2012-10-08 2015-05-12 Qualcomm Incorporated Transmit diversity architecture with optimized power consumption and area for UMTS and LTE systems
CN103199798B (zh) * 2013-03-20 2015-12-02 华为技术有限公司 一种多赫蒂功率放大电路及功率放大器
CN103716870B (zh) * 2013-12-31 2018-02-06 北京朗波芯微技术有限公司 用于移动通信终端的功率控制装置
US10530313B2 (en) * 2014-12-30 2020-01-07 Solid, Inc. Amplification device and relay apparatus including the same
JP6597461B2 (ja) * 2015-07-02 2019-10-30 株式会社村田製作所 増幅回路
GB201518859D0 (en) * 2015-10-23 2015-12-09 Airbus Defence & Space Ltd High-efficiency amplifier
KR102534861B1 (ko) * 2016-12-23 2023-05-22 삼성전자주식회사 앰프 모듈 및 그 제어 방법
EP3602778B1 (de) * 2017-04-27 2022-11-23 Telefonaktiebolaget LM Ericsson (PUBL) Mehrkanaliger doherty-verstärker, mehrantennensender und verfahren zum einschalten des mehrkanaligen doherty-verstärkers
US10491165B2 (en) 2018-03-12 2019-11-26 Psemi Corporation Doherty amplifier with adjustable alpha factor
CN110011621B (zh) * 2019-03-28 2023-07-28 杭州电子科技大学温州研究院有限公司 一种集成异向与多尔蒂结构的高回退范围射频功率放大器

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Publication number Priority date Publication date Assignee Title
US5786727A (en) * 1996-10-15 1998-07-28 Motorola, Inc. Multi-stage high efficiency linear power amplifier and method therefor
US6700444B2 (en) 2002-01-28 2004-03-02 Cree Microwave, Inc. N-way RF power amplifier with increased backoff power and power added efficiency
KR100450744B1 (ko) * 2002-08-29 2004-10-01 학교법인 포항공과대학교 도허티 증폭기
JP4033794B2 (ja) * 2003-03-24 2008-01-16 株式会社エヌ・ティ・ティ・ドコモ 高効率線形電力増幅器
JP2005348116A (ja) 2004-06-03 2005-12-15 Sharp Corp 無線通信装置
US7071779B2 (en) * 2004-06-17 2006-07-04 Winbond Electronics, Corp. Monolithic CMOS differential LNA with enhanced linearity
KR20060020482A (ko) * 2004-08-31 2006-03-06 엘지이노텍 주식회사 전력 증폭기
KR101049649B1 (ko) * 2004-09-10 2011-07-14 엘지에릭슨 주식회사 다중 경로 도허티 증폭기 및 그 제어 방법
US7847630B2 (en) 2004-11-05 2010-12-07 Hitachi Kokusai Electric Inc. Amplifier
US7489910B2 (en) 2005-03-30 2009-02-10 Kabushiki Kaisha Toshiba Wireless transmitter and amplifier
JP4792273B2 (ja) * 2005-10-18 2011-10-12 株式会社日立国際電気 増幅器

Also Published As

Publication number Publication date
US7498878B2 (en) 2009-03-03
US20080036533A1 (en) 2008-02-14
EP1887686B1 (de) 2011-03-30
EP1887686A1 (de) 2008-02-13
KR20080014509A (ko) 2008-02-14
KR101083920B1 (ko) 2011-11-15

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