DE602007010115D1 - Unipolarer halbleiterfotodetektor mit unterdrücktem dunkelstrom - Google Patents

Unipolarer halbleiterfotodetektor mit unterdrücktem dunkelstrom

Info

Publication number
DE602007010115D1
DE602007010115D1 DE602007010115T DE602007010115T DE602007010115D1 DE 602007010115 D1 DE602007010115 D1 DE 602007010115D1 DE 602007010115 T DE602007010115 T DE 602007010115T DE 602007010115 T DE602007010115 T DE 602007010115T DE 602007010115 D1 DE602007010115 D1 DE 602007010115D1
Authority
DE
Germany
Prior art keywords
layer
band edge
narrow bandgap
barrier layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007010115T
Other languages
English (en)
Inventor
Philip Klipstein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEMI CONDUCTOR DEVICES AN ELBI
Original Assignee
SEMI CONDUCTOR DEVICES AN ELBI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEMI CONDUCTOR DEVICES AN ELBI filed Critical SEMI CONDUCTOR DEVICES AN ELBI
Publication of DE602007010115D1 publication Critical patent/DE602007010115D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE602007010115T 2006-04-06 2007-03-29 Unipolarer halbleiterfotodetektor mit unterdrücktem dunkelstrom Active DE602007010115D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IL174844A IL174844A (en) 2006-04-06 2006-04-06 Unipolar semiconductor photodetector with suppressed dark current and method for producing the same
PCT/IL2007/000423 WO2007113821A2 (en) 2006-04-06 2007-03-29 A unipolar semiconductor photodetector with suppressed dark current and method for producing the same

Publications (1)

Publication Number Publication Date
DE602007010115D1 true DE602007010115D1 (de) 2010-12-09

Family

ID=38519718

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007010115T Active DE602007010115D1 (de) 2006-04-06 2007-03-29 Unipolarer halbleiterfotodetektor mit unterdrücktem dunkelstrom

Country Status (6)

Country Link
US (1) US8004012B2 (de)
EP (2) EP2002487B1 (de)
AT (1) ATE486372T1 (de)
DE (1) DE602007010115D1 (de)
IL (1) IL174844A (de)
WO (1) WO2007113821A2 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9117726B2 (en) * 2006-03-19 2015-08-25 Shimon Maimon Application of reduced dark current photodetector
USRE48642E1 (en) * 2006-03-19 2021-07-13 Shimon Maimon Application of reduced dark current photodetector
USRE48693E1 (en) 2006-03-19 2021-08-17 Shimon Maimon Application of reduced dark current photodetector with a thermoelectric cooler
US8044435B2 (en) 2006-11-14 2011-10-25 Lockheed Martin Corporation Sub-pixel nBn detector
WO2010077984A2 (en) * 2008-12-16 2010-07-08 California Institute Of Technology Digital alloy absorber for photodetectors
GB2466261A (en) 2008-12-17 2010-06-23 Qinetiq Ltd Semiconductor device and fabrication method
US8299497B1 (en) 2010-06-30 2012-10-30 Sandia Corporation Near-infrared photodetector with reduced dark current
US8450773B1 (en) 2010-07-15 2013-05-28 Sandia Corporation Strain-compensated infrared photodetector and photodetector array
US8217480B2 (en) 2010-10-22 2012-07-10 California Institute Of Technology Barrier infrared detector
US8686471B2 (en) 2011-04-28 2014-04-01 Drs Rsta, Inc. Minority carrier based HgCdTe infrared detectors and arrays
US20120280350A1 (en) * 2011-05-03 2012-11-08 Raytheon Company Barrier device position sensitive detector
US10115764B2 (en) 2011-08-15 2018-10-30 Raytheon Company Multi-band position sensitive imaging arrays
US8928029B2 (en) 2011-12-12 2015-01-06 California Institute Of Technology Single-band and dual-band infrared detectors
FR2985373B1 (fr) 2012-01-04 2014-01-24 Commissariat Energie Atomique Structure semiconductrice, dispositif comportant une telle structure et procede de fabrication d'une structure semiconductrice
US8723161B1 (en) 2012-01-17 2014-05-13 Sandia Corporation Two-color infrared detector
US9748427B1 (en) * 2012-11-01 2017-08-29 Hrl Laboratories, Llc MWIR photodetector with compound barrier with P-N junction
US9024296B2 (en) 2013-01-04 2015-05-05 Mani Sundaram Focal plane array with pixels defined by modulation of surface Fermi energy
US9214581B2 (en) 2013-02-11 2015-12-15 California Institute Of Technology Barrier infrared detectors on lattice mismatch substrates
US11063163B1 (en) * 2013-03-15 2021-07-13 Hrl Laboratories, Llc Infrared photo-detector with low turn-on voltage
IL225872A (en) 2013-04-22 2015-03-31 Semi Conductor Devices An Elbit Systems Rafael Partnership Photo detector semi-conductor with barrier
EP2802018A3 (de) 2013-05-07 2015-04-29 L-3 Communications Cincinnati Electronics Corporation Diodenbarrieren-Infrarotdetektorvorrichtung und Übergitter-Barrierenstrukturen
FR3021807B1 (fr) 2014-05-27 2017-09-29 Commissariat A L Energie Atomique Et Aux Energies Alternatives Matrice de photodiodes mesa a ftm amelioree
US9799785B1 (en) * 2015-03-13 2017-10-24 California Institute Of Technology Unipolar barrier dual-band infrared detectors
US9755091B2 (en) 2015-04-06 2017-09-05 The Boeing Company Dual-band infrared detector and method of detecting multiple bands of infrared radiation
IL238368B (en) 2015-04-19 2019-08-29 Semi Conductor Devices An Elbit Systems Rafael Partnership light sensor
CN108207117B (zh) * 2015-07-28 2022-04-19 罗切斯特大学 低暗电流、谐振腔增强的红外光电探测器
FR3041149B1 (fr) 2015-09-16 2018-03-23 Lynred Photodetecteur a courant d'obscurite reduit
FR3041815B1 (fr) * 2015-09-25 2020-02-21 Thales Photodetecteur comprenant un empilement de couches superposees
US10872987B2 (en) 2015-12-10 2020-12-22 California Institute Of Technology Enhanced quantum efficiency barrier infrared detectors
JP6673038B2 (ja) * 2016-06-10 2020-03-25 富士通株式会社 半導体結晶基板、赤外線検出装置、半導体結晶基板の製造方法及び赤外線検出装置の製造方法
IL246796B (en) 2016-07-14 2020-05-31 Semi Conductor Devices An Elbit Systems Rafael Partnership Two-color light sensor and method
US10411146B1 (en) 2017-01-06 2019-09-10 United States Of America As Represented By The Secretary Of The Air Force High absorption infrared superlattices
CN108630769A (zh) * 2017-03-17 2018-10-09 中国空空导弹研究院 一种nBn型InAlSb红外探测器材料及其制备方法，红外探测器
CN113614923B (zh) 2019-04-11 2024-02-23 Hrl实验室有限责任公司 同时双波段图像传感器
TWI835924B (zh) * 2019-11-18 2024-03-21 晶元光電股份有限公司 光偵測元件
WO2021108678A1 (en) * 2019-11-27 2021-06-03 The Regents Of The University Of California Uncooled infrared photodetectors
FR3105410B1 (fr) 2019-12-20 2022-01-14 Thales Sa Détecteur de rayonnement et procédé de fabrication associé

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900000074B1 (ko) * 1981-10-02 1990-01-19 미쓰다 가쓰시게 광 검출용 반도체장치
EP0106514B1 (de) * 1982-09-23 1989-03-15 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Infrarotdetektor
JPH09237913A (ja) * 1995-12-28 1997-09-09 Fuji Xerox Co Ltd 半導体受光素子及びその製造方法
US6603184B2 (en) * 2000-09-06 2003-08-05 Applied Optoelectronics, Inc. Double heterostructure photodiode with graded minority-carrier blocking structures
US6657194B2 (en) 2001-04-13 2003-12-02 Epir Technologies, Inc. Multispectral monolithic infrared focal plane array detectors
US6740908B1 (en) * 2003-03-18 2004-05-25 Agilent Technologies, Inc. Extended drift heterostructure photodiode having enhanced electron response
FR2855909B1 (fr) 2003-06-06 2005-08-26 Soitec Silicon On Insulator Procede d'obtention concomitante d'au moins une paire de structures comprenant au moins une couche utile reportee sur un substrat
IL156744A (en) * 2003-07-02 2011-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Depletion-less photodiode with suppressed dark current
US7368762B2 (en) * 2005-01-06 2008-05-06 Teledyne Licensing, Llc Heterojunction photodiode

Also Published As

Publication number Publication date
WO2007113821A3 (en) 2008-01-17
EP2249400A2 (de) 2010-11-10
EP2002487B1 (de) 2010-10-27
EP2002487A2 (de) 2008-12-17
US8004012B2 (en) 2011-08-23
US20090256231A1 (en) 2009-10-15
IL174844A0 (en) 2007-03-08
ATE486372T1 (de) 2010-11-15
WO2007113821A2 (en) 2007-10-11
IL174844A (en) 2011-02-28
EP2249400A3 (de) 2016-11-30

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