DE602007004714D1 - Mobilitätsmessungen von Inversionsladungsträgern - Google Patents

Mobilitätsmessungen von Inversionsladungsträgern

Info

Publication number
DE602007004714D1
DE602007004714D1 DE602007004714T DE602007004714T DE602007004714D1 DE 602007004714 D1 DE602007004714 D1 DE 602007004714D1 DE 602007004714 T DE602007004714 T DE 602007004714T DE 602007004714 T DE602007004714 T DE 602007004714T DE 602007004714 D1 DE602007004714 D1 DE 602007004714D1
Authority
DE
Germany
Prior art keywords
top surface
semiconductor substrate
dielectric material
layer
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007004714T
Other languages
English (en)
Inventor
Jean-Luc Everaert
Erik Rosseel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
SEMILAB SEMICONDUCTOR PHYSICS
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
SEMILAB SEMICONDUCTOR PHYSICS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC, SEMILAB SEMICONDUCTOR PHYSICS filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Publication of DE602007004714D1 publication Critical patent/DE602007004714D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Amplifiers (AREA)
DE602007004714T 2007-05-29 2007-10-17 Mobilitätsmessungen von Inversionsladungsträgern Active DE602007004714D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94059407P 2007-05-29 2007-05-29

Publications (1)

Publication Number Publication Date
DE602007004714D1 true DE602007004714D1 (de) 2010-03-25

Family

ID=39327419

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007004714T Active DE602007004714D1 (de) 2007-05-29 2007-10-17 Mobilitätsmessungen von Inversionsladungsträgern

Country Status (5)

Country Link
US (1) US7663393B2 (de)
EP (1) EP1998184B1 (de)
JP (1) JP5303189B2 (de)
AT (1) ATE457462T1 (de)
DE (1) DE602007004714D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5702545B2 (ja) * 2009-03-17 2015-04-15 アイメックＩｍｅｃ 半導体領域の接合深さを測定する方法および装置
US8415961B1 (en) * 2010-12-07 2013-04-09 Kla-Tencor Corporation Measuring sheet resistance and other properties of a semiconductor
US8803533B2 (en) * 2011-01-06 2014-08-12 University Of South Florida Noncontact determination of interface trap density for semiconductor-dielectric interface structures
EP2757579B1 (de) * 2013-01-17 2019-06-19 IMEC vzw Verfahren zur Charakterisierung von flachen Dotiergebieten für die Verwendung in Halbleiterbauelementen
US9880200B2 (en) * 2013-09-04 2018-01-30 Kla-Tencor Corporation Method and apparatus for non-contact measurement of forward voltage, saturation current density, ideality factor and I-V curves in P-N junctions
US9823198B2 (en) * 2013-09-14 2017-11-21 Kla-Tencor Corporation Method and apparatus for non-contact measurement of internal quantum efficiency in light emitting diode structures
US10969370B2 (en) * 2015-06-05 2021-04-06 Semilab Semiconductor Physics Laboratory Co., Ltd. Measuring semiconductor doping using constant surface potential corona charging
CN117233568B (zh) * 2023-11-10 2024-02-13 青禾晶元(天津)半导体材料有限公司 载流子迁移率的计算方法和装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5442297A (en) 1994-06-30 1995-08-15 International Business Machines Corporation Contactless sheet resistance measurement method and apparatus
US5519334A (en) * 1994-09-29 1996-05-21 Advanced Micro Devices, Inc. System and method for measuring charge traps within a dielectric layer formed on a semiconductor wafer
JP4020810B2 (ja) * 2002-03-29 2007-12-12 株式会社神戸製鋼所 半導体キャリアの寿命測定装置，その方法
US6972582B2 (en) * 2003-02-10 2005-12-06 Solid State Measurements, Inc. Apparatus and method for measuring semiconductor wafer electrical properties
US6911350B2 (en) * 2003-03-28 2005-06-28 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers

Also Published As

Publication number Publication date
JP2008300837A (ja) 2008-12-11
US20080297189A1 (en) 2008-12-04
US7663393B2 (en) 2010-02-16
EP1998184A1 (de) 2008-12-03
EP1998184B1 (de) 2010-02-10
ATE457462T1 (de) 2010-02-15
JP5303189B2 (ja) 2013-10-02

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Legal Events

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8364 No opposition during term of opposition