DE602007003233D1 - Schutz von in einer fläche eines mikrostrukturierten elements mündenden hohlräumen - Google Patents

Schutz von in einer fläche eines mikrostrukturierten elements mündenden hohlräumen

Info

Publication number
DE602007003233D1
DE602007003233D1 DE602007003233T DE602007003233T DE602007003233D1 DE 602007003233 D1 DE602007003233 D1 DE 602007003233D1 DE 602007003233 T DE602007003233 T DE 602007003233T DE 602007003233 T DE602007003233 T DE 602007003233T DE 602007003233 D1 DE602007003233 D1 DE 602007003233D1
Authority
DE
Germany
Prior art keywords
hollowing
mills
emerging
protection
microstructured element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007003233T
Other languages
English (en)
Inventor
Barbara Charlet
Poche Helene Le
Yveline Gobil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE602007003233D1 publication Critical patent/DE602007003233D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
    • B81C1/00833—Methods for preserving structures not provided for in groups B81C1/00785 - B81C1/00825
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/019—Bonding or gluing multiple substrate layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/05—Temporary protection of devices or parts of the devices during manufacturing
    • B81C2201/053—Depositing a protective layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Materials For Medical Uses (AREA)
  • Spinning Methods And Devices For Manufacturing Artificial Fibers (AREA)
  • Air Bags (AREA)
  • Heat Treatment Of Articles (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE602007003233T 2006-04-05 2007-04-03 Schutz von in einer fläche eines mikrostrukturierten elements mündenden hohlräumen Active DE602007003233D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0651210A FR2899572B1 (fr) 2006-04-05 2006-04-05 Protection de cavites debouchant sur une face d'un element microstructure
PCT/EP2007/053244 WO2007113300A1 (fr) 2006-04-05 2007-04-03 Protection de cavites debouchant sur une face d'un element microstructure.

Publications (1)

Publication Number Publication Date
DE602007003233D1 true DE602007003233D1 (de) 2009-12-24

Family

ID=37467469

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007003233T Active DE602007003233D1 (de) 2006-04-05 2007-04-03 Schutz von in einer fläche eines mikrostrukturierten elements mündenden hohlräumen

Country Status (7)

Country Link
US (1) US8153503B2 (de)
EP (1) EP2054338B1 (de)
JP (1) JP2009532836A (de)
AT (1) ATE448175T1 (de)
DE (1) DE602007003233D1 (de)
FR (1) FR2899572B1 (de)
WO (1) WO2007113300A1 (de)

Family Cites Families (43)

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FR2634059B1 (fr) * 1988-07-08 1996-04-12 Thomson Csf Microcomposant electronique autoscelle sous vide, notamment diode, ou triode, et procede de fabrication correspondant
US5038070A (en) * 1989-12-26 1991-08-06 Hughes Aircraft Company Field emitter structure and fabrication process
JP3007654B2 (ja) * 1990-05-31 2000-02-07 株式会社リコー 電子放出素子の製造方法
US5332627A (en) * 1990-10-30 1994-07-26 Sony Corporation Field emission type emitter and a method of manufacturing thereof
EP0503638B1 (de) * 1991-03-13 1996-06-19 Sony Corporation Anordnung von Feldemissionskathoden
JPH0594761A (ja) * 1991-10-02 1993-04-16 Sharp Corp 電界放出型真空管及びその製造方法
JPH05299009A (ja) * 1992-04-23 1993-11-12 New Japan Radio Co Ltd 電界放射装置
JP3231528B2 (ja) * 1993-08-17 2001-11-26 株式会社東芝 電界放出型冷陰極およびその製造方法
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
JPH07104682A (ja) * 1993-09-29 1995-04-21 Futaba Corp 電界放出陰極を用いた表示装置
JPH07147130A (ja) * 1993-11-24 1995-06-06 Nec Kansai Ltd 陰極線管の製造方法
US5451830A (en) * 1994-01-24 1995-09-19 Industrial Technology Research Institute Single tip redundancy method with resistive base and resultant flat panel display
FR2715502B1 (fr) * 1994-01-26 1996-04-05 Commissariat Energie Atomique Structure présentant des cavités et procédé de réalisation d'une telle structure.
GB9416754D0 (en) * 1994-08-18 1994-10-12 Isis Innovation Field emitter structures
EP0700063A1 (de) * 1994-08-31 1996-03-06 International Business Machines Corporation Aufbau und Verfahren zur Herstellung einer Feldemissionsanordnung
US5509840A (en) * 1994-11-28 1996-04-23 Industrial Technology Research Institute Fabrication of high aspect ratio spacers for field emission display
KR100351070B1 (ko) * 1995-01-27 2003-01-29 삼성에스디아이 주식회사 전계방출표시소자의제조방법
KR100343213B1 (ko) * 1995-11-14 2002-11-27 삼성에스디아이 주식회사 전계방출소자의제조방법
US5693235A (en) * 1995-12-04 1997-12-02 Industrial Technology Research Institute Methods for manufacturing cold cathode arrays
US5710483A (en) * 1996-04-08 1998-01-20 Industrial Technology Research Institute Field emission device with micromesh collimator
US5882532A (en) * 1996-05-31 1999-03-16 Hewlett-Packard Company Fabrication of single-crystal silicon structures using sacrificial-layer wafer bonding
KR100262144B1 (ko) * 1997-07-02 2000-07-15 하제준 일체화된 mosfet로 조절되는 fea 및 그 제조방법
US6010383A (en) * 1997-10-31 2000-01-04 Candescent Technologies Corporation Protection of electron-emissive elements prior to removing excess emitter material during fabrication of electron-emitting device
DE19804192A1 (de) * 1998-02-03 1999-08-12 Siemens Ag Verfahren zur Herstellung eines Leistungshalbleiterbauelementes
US6064149A (en) * 1998-02-23 2000-05-16 Micron Technology Inc. Field emission device with silicon-containing adhesion layer
US6137212A (en) * 1998-05-26 2000-10-24 The United States Of America As Represented By The Secretary Of The Army Field emission flat panel display with improved spacer architecture
US6176754B1 (en) * 1998-05-29 2001-01-23 Candescent Technologies Corporation Method for forming a conductive focus waffle
US6197607B1 (en) * 1999-03-01 2001-03-06 Micron Technology, Inc. Method of fabricating field emission arrays to optimize the size of grid openings and to minimize the occurrence of electrical shorts
US6369497B1 (en) * 1999-03-01 2002-04-09 Micron Technology, Inc. Method of fabricating row lines of a field emission array and forming pixel openings therethrough by employing two masks
JP2000285795A (ja) * 1999-03-31 2000-10-13 Sony Corp 電子放出源およびその製造方法ならびにディスプレイ装置
JP2001035352A (ja) * 1999-07-22 2001-02-09 Sharp Corp 電子源、その製造方法及びそれを用いて形成した画像形成装置
KR100314094B1 (ko) * 1999-08-12 2001-11-15 김순택 전기 영동법을 이용한 카본나노튜브 필드 에미터의 제조 방법
FR2803438B1 (fr) * 1999-12-29 2002-02-08 Commissariat Energie Atomique Procede de realisation d'une structure d'interconnexions comprenant une isolation electrique incluant des cavites d'air ou de vide
KR100480771B1 (ko) * 2000-01-05 2005-04-06 삼성에스디아이 주식회사 전계방출소자 및 그 제조방법
KR100464314B1 (ko) * 2000-01-05 2004-12-31 삼성에스디아이 주식회사 전계방출소자 및 그 제조방법
US6753544B2 (en) * 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
FR2834123B1 (fr) * 2001-12-21 2005-02-04 Soitec Silicon On Insulator Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report
CN100416840C (zh) * 2002-11-01 2008-09-03 株式会社半导体能源研究所 半导体装置及半导体装置的制作方法
US7138329B2 (en) * 2002-11-15 2006-11-21 United Microelectronics Corporation Air gap for tungsten/aluminum plug applications
KR100879293B1 (ko) * 2002-12-26 2009-01-19 삼성에스디아이 주식회사 다층 구조로 형성된 전자 방출원을 구비한 전계 방출표시장치
US20050095814A1 (en) * 2003-11-05 2005-05-05 Xu Zhu Ultrathin form factor MEMS microphones and microspeakers
US7564178B2 (en) * 2005-02-14 2009-07-21 Agere Systems Inc. High-density field emission elements and a method for forming said emission elements

Also Published As

Publication number Publication date
JP2009532836A (ja) 2009-09-10
WO2007113300A1 (fr) 2007-10-11
EP2054338A1 (de) 2009-05-06
ATE448175T1 (de) 2009-11-15
EP2054338B1 (de) 2009-11-11
FR2899572B1 (fr) 2008-09-05
US20090263920A1 (en) 2009-10-22
FR2899572A1 (fr) 2007-10-12
US8153503B2 (en) 2012-04-10

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