DE602006019770D1 - Verfahren zur herstellung eines halbleiterbauelements und mit einem solchen verfahren erhaltenes halbleiterbauelement - Google Patents
Verfahren zur herstellung eines halbleiterbauelements und mit einem solchen verfahren erhaltenes halbleiterbauelementInfo
- Publication number
- DE602006019770D1 DE602006019770D1 DE602006019770T DE602006019770T DE602006019770D1 DE 602006019770 D1 DE602006019770 D1 DE 602006019770D1 DE 602006019770 T DE602006019770 T DE 602006019770T DE 602006019770 T DE602006019770 T DE 602006019770T DE 602006019770 D1 DE602006019770 D1 DE 602006019770D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- region
- opening
- semiconductor layer
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title abstract 13
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 125000006850 spacer group Chemical group 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05110997 | 2005-11-21 | ||
| PCT/IB2006/053996 WO2007057803A1 (en) | 2005-11-21 | 2006-10-29 | Method of manufacturing a semiconductor device and semiconductor device obtained with such a method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602006019770D1 true DE602006019770D1 (de) | 2011-03-03 |
Family
ID=37772906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602006019770T Active DE602006019770D1 (de) | 2005-11-21 | 2006-10-29 | Verfahren zur herstellung eines halbleiterbauelements und mit einem solchen verfahren erhaltenes halbleiterbauelement |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8173511B2 (de) |
| EP (1) | EP1955367B1 (de) |
| JP (1) | JP2009516912A (de) |
| CN (1) | CN101313394B (de) |
| AT (1) | ATE496393T1 (de) |
| DE (1) | DE602006019770D1 (de) |
| WO (1) | WO2007057803A1 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8431966B2 (en) | 2008-05-21 | 2013-04-30 | Nxp B.V. | Method of manufacturing a bipolar transistor semiconductor device and semiconductor devices obtained thereby |
| US8729662B2 (en) * | 2008-09-12 | 2014-05-20 | Semiconductor Components Industries, Llc | Semiconductor device and manufacturing method thereof |
| EP2372754B1 (de) * | 2010-04-01 | 2018-03-14 | Nxp B.V. | Abstandshalterstruktur bei der Herstellung von flachen Bipolartransistoren |
| EP2506297A1 (de) * | 2011-03-29 | 2012-10-03 | Nxp B.V. | Bi-CMOS-Vorrichtung und Verfahren |
| CN109887996B (zh) * | 2019-01-31 | 2022-03-08 | 上海华虹宏力半导体制造有限公司 | 自对准锗硅hbt器件的制造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1267092A (zh) * | 1999-03-10 | 2000-09-20 | 光磊科技股份有限公司 | 光电晶体 |
| FR2805923B1 (fr) * | 2000-03-06 | 2002-05-24 | St Microelectronics Sa | Procede de fabrication d'un transistor bipolaire double- polysilicium auto-aligne |
| TW515106B (en) * | 2000-09-13 | 2002-12-21 | Toshiba Corp | Bipolar transistor, semiconductor light emitting device and semiconductor device |
| EP1512172B1 (de) * | 2002-05-29 | 2010-04-28 | Nxp B.V. | Verfahren zur herstellung eines sige heteroübergang-bipolartransistors |
| JP2007501512A (ja) * | 2003-08-01 | 2007-01-25 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | バイポーラ・トランジスタを有する半導体装置の製造方法及びバイポーラ・トランジスタを有する装置 |
| FR2868203B1 (fr) * | 2004-03-29 | 2006-06-09 | St Microelectronics Sa | Procede de fabrication d'un transistor bipolaire a base extrinseque monocristalline |
-
2006
- 2006-10-29 JP JP2008540734A patent/JP2009516912A/ja not_active Withdrawn
- 2006-10-29 DE DE602006019770T patent/DE602006019770D1/de active Active
- 2006-10-29 US US12/094,303 patent/US8173511B2/en active Active
- 2006-10-29 AT AT06821240T patent/ATE496393T1/de not_active IP Right Cessation
- 2006-10-29 EP EP06821240A patent/EP1955367B1/de active Active
- 2006-10-29 CN CN2006800432704A patent/CN101313394B/zh active Active
- 2006-10-29 WO PCT/IB2006/053996 patent/WO2007057803A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| CN101313394B (zh) | 2011-10-05 |
| US20100289022A1 (en) | 2010-11-18 |
| EP1955367B1 (de) | 2011-01-19 |
| US8173511B2 (en) | 2012-05-08 |
| JP2009516912A (ja) | 2009-04-23 |
| EP1955367A1 (de) | 2008-08-13 |
| CN101313394A (zh) | 2008-11-26 |
| WO2007057803A1 (en) | 2007-05-24 |
| ATE496393T1 (de) | 2011-02-15 |
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