DE602005027032D1 - Dünnschicht-Mikrostruktur, MEMS-Schalter mit einer derartigen Dünnschicht-Mikrostruktur und entsprechendes Herstellunsverfahren - Google Patents

Dünnschicht-Mikrostruktur, MEMS-Schalter mit einer derartigen Dünnschicht-Mikrostruktur und entsprechendes Herstellunsverfahren

Info

Publication number
DE602005027032D1
DE602005027032D1 DE602005027032T DE602005027032T DE602005027032D1 DE 602005027032 D1 DE602005027032 D1 DE 602005027032D1 DE 602005027032 T DE602005027032 T DE 602005027032T DE 602005027032 T DE602005027032 T DE 602005027032T DE 602005027032 D1 DE602005027032 D1 DE 602005027032D1
Authority
DE
Germany
Prior art keywords
thin
film microstructure
herstellungsunsverfahren
mems switch
microstructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005027032T
Other languages
English (en)
Inventor
Soon-Cheol Kweon
Hyung-Jae Shin
Byung-Hee Jeon
Seok-Kwan Hong
Che-Heung Kim
Sang-Hun Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602005027032D1 publication Critical patent/DE602005027032D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
DE602005027032T 2004-10-27 2005-10-18 Dünnschicht-Mikrostruktur, MEMS-Schalter mit einer derartigen Dünnschicht-Mikrostruktur und entsprechendes Herstellunsverfahren Active DE602005027032D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040086056A KR100661347B1 (ko) 2004-10-27 2004-10-27 미소 박막 구조물 및 이를 이용한 ｍｅｍｓ 스위치 그리고그것들을 제조하기 위한 방법

Publications (1)

Publication Number Publication Date
DE602005027032D1 true DE602005027032D1 (de) 2011-05-05

Family

ID=35759270

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005027032T Active DE602005027032D1 (de) 2004-10-27 2005-10-18 Dünnschicht-Mikrostruktur, MEMS-Schalter mit einer derartigen Dünnschicht-Mikrostruktur und entsprechendes Herstellunsverfahren

Country Status (5)

Country Link
US (3) US7746536B2 (de)
EP (1) EP1653494B1 (de)
JP (1) JP4741340B2 (de)
KR (1) KR100661347B1 (de)
DE (1) DE602005027032D1 (de)

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US7820470B2 (en) * 2005-07-15 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of micro-electro-mechanical device
KR20070074728A (ko) 2006-01-10 2007-07-18 삼성전자주식회사 Ｍｅｍｓ 스위치
JP4720763B2 (ja) * 2007-02-28 2011-07-13 パナソニック電工株式会社 マイクロリレー
KR101177105B1 (ko) * 2007-11-06 2012-08-24 삼성전자주식회사 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법
KR100959454B1 (ko) 2007-12-10 2010-05-25 주식회사 동부하이텍 반도체 소자 및 그 제조 방법
US8164821B2 (en) * 2008-02-22 2012-04-24 Qualcomm Mems Technologies, Inc. Microelectromechanical device with thermal expansion balancing layer or stiffening layer
JP4419103B1 (ja) * 2008-08-27 2010-02-24 オムロン株式会社 静電容量型振動センサ
CN101763987B (zh) * 2009-12-30 2012-05-23 中国电子科技集团公司第十三研究所 Rf mems开关及其制备方法
EP2460762B1 (de) * 2010-12-06 2014-10-08 Nxp B.V. MEMS-Vorrichtung mit verringerter Haftung und Herstellungsverfahren
CN102086016B (zh) * 2010-12-30 2015-12-02 上海集成电路研发中心有限公司 Mems微桥结构及其制造方法
CN102175909B (zh) * 2011-03-08 2013-11-20 东南大学 微电子机械悬臂梁式微波功率自动检测系统及其检测方法和制备方法
US8692562B2 (en) * 2011-08-01 2014-04-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Wireless open-circuit in-plane strain and displacement sensor requiring no electrical connections
CN102928977B (zh) * 2012-10-24 2015-08-12 无锡微奥科技有限公司 一种mems微镜双稳态结构的制作方法及光开关
TWI490923B (zh) * 2013-03-08 2015-07-01 薄膜裝置
CN103746602B (zh) * 2014-01-14 2016-01-20 北京大学 一种螺旋型压电式能量采集器制备方法
SG11201610176YA (en) 2014-06-25 2017-01-27 Gen Electric Integrated micro-electromechanical switches and a related method thereof
CN106672894B (zh) * 2017-01-12 2018-03-23 东南大学 一种基于柔性基板mems开关结构的曲率传感器
WO2018196946A1 (en) 2017-04-24 2018-11-01 Hp Indigo B.V. Layer thickness in print agent concentration apparatus
CN107128873B (zh) * 2017-05-09 2019-04-16 北方工业大学 Mems微驱动器及其制作方法
CN111246659B (zh) * 2020-02-24 2021-08-17 西安易朴通讯技术有限公司 Pcb及电子设备

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US6952301B2 (en) * 1995-06-19 2005-10-04 Reflectivity, Inc Spatial light modulators with light blocking and absorbing areas
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JP3441312B2 (ja) * 1996-09-18 2003-09-02 株式会社東芝 電界放出型冷陰極装置及びその製造方法
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US6962832B2 (en) * 2004-02-02 2005-11-08 Wireless Mems, Inc. Fabrication method for making a planar cantilever, low surface leakage, reproducible and reliable metal dimple contact micro-relay MEMS switch

Also Published As

Publication number Publication date
EP1653494A3 (de) 2007-08-22
US20100225990A1 (en) 2010-09-09
EP1653494B1 (de) 2011-03-23
KR100661347B1 (ko) 2006-12-27
US20100225991A1 (en) 2010-09-09
US20060087716A1 (en) 2006-04-27
JP4741340B2 (ja) 2011-08-03
KR20060036976A (ko) 2006-05-03
US8184356B2 (en) 2012-05-22
EP1653494A2 (de) 2006-05-03
US7746536B2 (en) 2010-06-29
JP2006123162A (ja) 2006-05-18

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