DE602005022423D1 - Schaltung zum zugreifen auf ein chalcogenid-speicherarray - Google Patents

Schaltung zum zugreifen auf ein chalcogenid-speicherarray

Info

Publication number
DE602005022423D1
DE602005022423D1 DE602005022423T DE602005022423T DE602005022423D1 DE 602005022423 D1 DE602005022423 D1 DE 602005022423D1 DE 602005022423 T DE602005022423 T DE 602005022423T DE 602005022423 T DE602005022423 T DE 602005022423T DE 602005022423 D1 DE602005022423 D1 DE 602005022423D1
Authority
DE
Germany
Prior art keywords
circuit
write
memory array
chalcogenide
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005022423T
Other languages
English (en)
Inventor
Bin Li
Kenneth R Knowles
David C Lawson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BAE Systems Information and Electronic Systems Integration Inc
Original Assignee
BAE Systems Information and Electronic Systems Integration Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BAE Systems Information and Electronic Systems Integration Inc filed Critical BAE Systems Information and Electronic Systems Integration Inc
Publication of DE602005022423D1 publication Critical patent/DE602005022423D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
DE602005022423T 2004-03-26 2005-03-25 Schaltung zum zugreifen auf ein chalcogenid-speicherarray Active DE602005022423D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/811,454 US6944041B1 (en) 2004-03-26 2004-03-26 Circuit for accessing a chalcogenide memory array
PCT/US2005/010189 WO2005098864A2 (en) 2004-03-26 2005-03-25 Circuit for accessing a chalcogenide memory array

Publications (1)

Publication Number Publication Date
DE602005022423D1 true DE602005022423D1 (de) 2010-09-02

Family

ID=34912653

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005022423T Active DE602005022423D1 (de) 2004-03-26 2005-03-25 Schaltung zum zugreifen auf ein chalcogenid-speicherarray

Country Status (5)

Country Link
US (1) US6944041B1 (de)
EP (1) EP1733398B1 (de)
AT (1) ATE475182T1 (de)
DE (1) DE602005022423D1 (de)
WO (1) WO2005098864A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7570524B2 (en) * 2005-03-30 2009-08-04 Ovonyx, Inc. Circuitry for reading phase change memory cells having a clamping circuit
US20080101110A1 (en) * 2006-10-25 2008-05-01 Thomas Happ Combined read/write circuit for memory
US7916527B2 (en) * 2007-11-30 2011-03-29 Bae Systems Information And Electronic Systems Integration Inc. Read reference circuit for a sense amplifier within a chalcogenide memory device
CN103222005B (zh) 2009-12-31 2016-08-24 美光科技公司 用于相变存储器阵列的方法
US9406881B1 (en) 2015-04-24 2016-08-02 Micron Technology, Inc. Memory cells having a heater electrode formed between a first storage material and a second storage material and methods of forming the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789758A (en) * 1995-06-07 1998-08-04 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
US5883827A (en) 1996-08-26 1999-03-16 Micron Technology, Inc. Method and apparatus for reading/writing data in a memory system including programmable resistors
JP3497770B2 (ja) * 1999-05-20 2004-02-16 株式会社 沖マイクロデザイン 半導体記憶装置
US6266273B1 (en) * 2000-08-21 2001-07-24 Sandisk Corporation Method and structure for reliable data copy operation for non-volatile memories
US6570784B2 (en) * 2001-06-29 2003-05-27 Ovonyx, Inc. Programming a phase-change material memory
US6487113B1 (en) * 2001-06-29 2002-11-26 Ovonyx, Inc. Programming a phase-change memory with slow quench time
AU2002331580A1 (en) * 2002-08-14 2004-03-03 Intel Corporation Method for reading a structural phase-change memory
US6795338B2 (en) * 2002-12-13 2004-09-21 Intel Corporation Memory having access devices using phase change material such as chalcogenide
US6813178B2 (en) * 2003-03-12 2004-11-02 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation

Also Published As

Publication number Publication date
ATE475182T1 (de) 2010-08-15
EP1733398B1 (de) 2010-07-21
EP1733398A2 (de) 2006-12-20
EP1733398A4 (de) 2007-06-20
WO2005098864A2 (en) 2005-10-20
WO2005098864A3 (en) 2006-06-08
US6944041B1 (en) 2005-09-13
US20050213367A1 (en) 2005-09-29

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