DE602005021277D1 - Piezoelektrisches/elektrostriktives filmartiges Bauelement - Google Patents

Piezoelektrisches/elektrostriktives filmartiges Bauelement

Info

Publication number
DE602005021277D1
DE602005021277D1 DE602005021277T DE602005021277T DE602005021277D1 DE 602005021277 D1 DE602005021277 D1 DE 602005021277D1 DE 602005021277 T DE602005021277 T DE 602005021277T DE 602005021277 T DE602005021277 T DE 602005021277T DE 602005021277 D1 DE602005021277 D1 DE 602005021277D1
Authority
DE
Germany
Prior art keywords
piezoelectric
component
electrostrictive film
electrostrictive
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005021277T
Other languages
English (en)
Inventor
Hirofumi Yamaguchi
Takatoshi Nehagi
Kunihiko Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of DE602005021277D1 publication Critical patent/DE602005021277D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N11/00—Investigating flow properties of materials, e.g. viscosity, plasticity; Analysing materials by determining flow properties
    • G01N11/10—Investigating flow properties of materials, e.g. viscosity, plasticity; Analysing materials by determining flow properties by moving a body within the material
    • G01N11/16—Investigating flow properties of materials, e.g. viscosity, plasticity; Analysing materials by determining flow properties by moving a body within the material by measuring damping effect upon oscillatory body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N9/00—Investigating density or specific gravity of materials; Analysing materials by determining density or specific gravity
    • G01N9/002—Investigating density or specific gravity of materials; Analysing materials by determining density or specific gravity using variation of the resonant frequency of an element vibrating in contact with the material submitted to analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N9/00—Investigating density or specific gravity of materials; Analysing materials by determining density or specific gravity
    • G01N9/36—Analysing materials by measuring the density or specific gravity, e.g. determining quantity of moisture

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
DE602005021277T 2004-04-05 2005-04-05 Piezoelektrisches/elektrostriktives filmartiges Bauelement Active DE602005021277D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004111468 2004-04-05

Publications (1)

Publication Number Publication Date
DE602005021277D1 true DE602005021277D1 (de) 2010-07-01

Family

ID=34940718

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005021277T Active DE602005021277D1 (de) 2004-04-05 2005-04-05 Piezoelektrisches/elektrostriktives filmartiges Bauelement

Country Status (4)

Country Link
US (1) US7126255B2 (de)
EP (1) EP1603173B1 (de)
CN (1) CN100380699C (de)
DE (1) DE602005021277D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4149444B2 (ja) * 2005-01-12 2008-09-10 富士通メディアデバイス株式会社 圧電薄膜共振子及びこれを用いたフィルタ
US8624346B2 (en) * 2005-10-11 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Exclusion zone for stress-sensitive circuit design
US7148611B1 (en) * 2005-10-11 2006-12-12 Honeywell International Inc. Multiple function bulk acoustic wave liquid property sensor
EP2020692B1 (de) * 2006-04-24 2014-05-14 NGK Insulators, Ltd. Piezoelektrische filmanordnung
JP4611251B2 (ja) * 2006-07-04 2011-01-12 日本碍子株式会社 流体特性測定装置
US7952167B2 (en) 2007-04-27 2011-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Scribe line layout design
US8125052B2 (en) * 2007-05-14 2012-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring structure with improved cracking protection
CN101772889B (zh) * 2007-08-03 2013-01-09 株式会社大真空 压电振子
US8643147B2 (en) * 2007-11-01 2014-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Seal ring structure with improved cracking protection and reduced problems
US8334582B2 (en) * 2008-06-26 2012-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Protective seal ring for preventing die-saw induced stress
US7906836B2 (en) 2008-11-14 2011-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Heat spreader structures in scribe lines
US8368180B2 (en) * 2009-02-18 2013-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Scribe line metal structure
US8261618B2 (en) * 2010-11-22 2012-09-11 General Electric Company Device for measuring properties of working fluids
KR101900180B1 (ko) * 2017-01-11 2018-09-18 포항공과대학교 산학협력단 영상의 특성 추출을 위한 영상 분석 방법 및 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69124339T2 (de) * 1990-05-25 1997-05-15 Toyo Communication Equip Elektroden- und elektrodenleitungsstruktur eines piezoelektrischen resonators aus einer ultradünnen schicht
US5545461A (en) * 1994-02-14 1996-08-13 Ngk Insulators, Ltd. Ceramic diaphragm structure having convex diaphragm portion and method of producing the same
JP3388060B2 (ja) * 1994-11-25 2003-03-17 日本碍子株式会社 流体の特性測定用素子及び流体の特性測定装置
JP3501860B2 (ja) * 1994-12-21 2004-03-02 日本碍子株式会社 圧電／電歪膜型素子及びその製造方法
JP3432974B2 (ja) * 1995-10-13 2003-08-04 日本碍子株式会社 圧電／電歪膜型素子
JP3503386B2 (ja) * 1996-01-26 2004-03-02 セイコーエプソン株式会社 インクジェット式記録ヘッド及びその製造方法
JP3462400B2 (ja) * 1998-09-14 2003-11-05 日本碍子株式会社 セラミックダイヤフラム構造体の製造方法
EP1176403A3 (de) * 2000-07-28 2003-03-19 Seiko Epson Corporation Flüssigkeitsverbrauchdetektor
JP3465675B2 (ja) * 2000-09-11 2003-11-10 日本碍子株式会社 圧電／電歪膜型素子
US6424237B1 (en) * 2000-12-21 2002-07-23 Agilent Technologies, Inc. Bulk acoustic resonator perimeter reflection system
JP3728623B2 (ja) * 2001-03-02 2005-12-21 日本碍子株式会社 圧電／電歪膜型素子
US6936954B2 (en) * 2001-08-29 2005-08-30 Honeywell International Inc. Bulk resonator
JP3957528B2 (ja) * 2002-03-05 2007-08-15 日本碍子株式会社 圧電／電歪膜型素子
EP1533896B1 (de) * 2003-11-20 2011-11-02 Panasonic Corporation Piezoelektrisches Element als solches sowie in Zusammensetzung, in einem Filter, in einem Duplexer oder in Kommunikationsvorrichtung
CN100521819C (zh) * 2004-10-15 2009-07-29 清华大学 硅基铁电微声学传感器畴极化区域控制和电极连接的方法

Also Published As

Publication number Publication date
EP1603173B1 (de) 2010-05-19
EP1603173A2 (de) 2005-12-07
US20050218757A1 (en) 2005-10-06
CN1681141A (zh) 2005-10-12
US7126255B2 (en) 2006-10-24
CN100380699C (zh) 2008-04-09
EP1603173A3 (de) 2007-06-06

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