DE602005008302D1 - Dreidimensional gestapelter Photonischer Kristall, Lichtquelle und Bilderzeugungsapparat - Google Patents

Dreidimensional gestapelter Photonischer Kristall, Lichtquelle und Bilderzeugungsapparat

Info

Publication number
DE602005008302D1
DE602005008302D1 DE602005008302T DE602005008302T DE602005008302D1 DE 602005008302 D1 DE602005008302 D1 DE 602005008302D1 DE 602005008302 T DE602005008302 T DE 602005008302T DE 602005008302 T DE602005008302 T DE 602005008302T DE 602005008302 D1 DE602005008302 D1 DE 602005008302D1
Authority
DE
Germany
Prior art keywords
light source
imaging apparatus
photonic crystal
dimensionally stacked
stacked photonic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005008302T
Other languages
German (de)
English (en)
Inventor
Hikaru Hoshi
Akinari Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE602005008302D1 publication Critical patent/DE602005008302D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H01S5/426—Vertically stacked cavities
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00—Details of colour television systems
    • H04N9/12—Picture reproducers
    • H04N9/30—Picture reproducers using solid-state colour display devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00—Details of colour television systems
    • H04N9/12—Picture reproducers
    • H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
    • H04N9/3129—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM] scanning a light beam on the display screen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18397—Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/36—Structure or shape of the active region; Materials used for the active region comprising organic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Lasers (AREA)
  • Liquid Crystal (AREA)
DE602005008302T 2004-04-12 2005-04-11 Dreidimensional gestapelter Photonischer Kristall, Lichtquelle und Bilderzeugungsapparat Active DE602005008302D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004116806 2004-04-12
JP2005102596A JP4642527B2 (ja) 2004-04-12 2005-03-31 積層型３次元フォトニック結晶及び発光素子及び画像表示装置

Publications (1)

Publication Number Publication Date
DE602005008302D1 true DE602005008302D1 (de) 2008-09-04

Family

ID=34940773

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005008302T Active DE602005008302D1 (de) 2004-04-12 2005-04-11 Dreidimensional gestapelter Photonischer Kristall, Lichtquelle und Bilderzeugungsapparat

Country Status (4)

Country Link
US (2) US7462873B2 (ja)
EP (1) EP1587186B1 (ja)
JP (1) JP4642527B2 (ja)
DE (1) DE602005008302D1 (ja)

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JP4642527B2 (ja) * 2004-04-12 2011-03-02 キヤノン株式会社 積層型３次元フォトニック結晶及び発光素子及び画像表示装置
JP3847330B2 (ja) * 2004-04-21 2006-11-22 松下電器産業株式会社 フォトニック結晶デバイス
JP4603847B2 (ja) * 2004-10-15 2010-12-22 キヤノン株式会社 共振器および発光素子および波長変換素子
TWI279595B (en) * 2005-11-14 2007-04-21 Ind Tech Res Inst Electromagnetic polarizing structure and polarized electromagnetic device
US8228604B2 (en) * 2005-11-14 2012-07-24 Industrial Technology Research Institute Electromagnetic (EM) wave polarizing structure and method for providing polarized electromagnetic (EM) wave
JP2007242945A (ja) * 2006-03-09 2007-09-20 Furukawa Electric Co Ltd:The 面発光半導体レーザ素子
US20080112663A1 (en) * 2006-03-22 2008-05-15 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Layered electromagnetically responsive assembly
US8369659B2 (en) 2006-03-22 2013-02-05 The Invention Science Fund I Llc High-Q resonators assembly
US20110190167A1 (en) * 2006-03-22 2011-08-04 Hillis W Daniel Electromagnetically responsive element with self resonant bodies
KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
US8941299B2 (en) * 2006-05-21 2015-01-27 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US7674573B2 (en) * 2006-08-08 2010-03-09 Canon Kabushiki Kaisha Method for manufacturing layered periodic structures
DE102006045702A1 (de) * 2006-09-27 2008-04-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102006051745B4 (de) * 2006-09-28 2024-02-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
US7532384B2 (en) * 2006-11-15 2009-05-12 Massachusetts Institute Of Technology π-Phase shift device for light
US8569696B2 (en) * 2007-01-30 2013-10-29 Raytheon Company Imaging system and method using a photonic band gap array
DE102007011637A1 (de) * 2007-03-09 2008-09-18 Ivoclar Vivadent Ag Lichtemissionsvorrichtung
US7623560B2 (en) 2007-09-27 2009-11-24 Ostendo Technologies, Inc. Quantum photonic imagers and methods of fabrication thereof
JP2010050126A (ja) * 2008-08-19 2010-03-04 Central Glass Co Ltd Ａｓｅ光源
US8363185B2 (en) * 2008-10-10 2013-01-29 Samsung Electronics Co., Ltd. Photonic crystal optical filter, transmissive color filter, transflective color filter, and display apparatus using the color filters
US8264637B2 (en) * 2008-10-10 2012-09-11 Samsung Electronics Co., Ltd. Photonic crystal optical filter, reflective color filter, display apparatus using the reflective color filter, and method of manufacturing the reflective color filter
GB2468323A (en) * 2009-03-04 2010-09-08 Dyson Technology Ltd Fan assembly
DE102009030549A1 (de) * 2009-06-25 2010-12-30 Osram Opto Semiconductors Gmbh Optisches Projektionsgerät
KR101678672B1 (ko) * 2010-08-19 2016-11-23 삼성전자주식회사 반사형 모드와 투과형 모드 사이의 전환이 가능한 디스플레이 장치
CN103650129A (zh) * 2011-05-19 2014-03-19 港大科桥有限公司 芯片堆叠
KR20130115901A (ko) * 2012-04-13 2013-10-22 삼성디스플레이 주식회사 듀얼 모드 표시 장치
GB201215344D0 (en) * 2012-08-29 2012-10-10 Ibm Light-reflecting grating structure for photvoltaic devices
WO2015028528A1 (en) 2013-09-02 2015-03-05 Koninklijke Philips N.V. Transparent computer structure
EP3118661A4 (en) * 2014-03-28 2017-03-29 Huawei Technologies Co., Ltd. Optical interconnection device, optoelectronic chip system, and optical signal sharing method
EP3313587B1 (en) * 2015-06-24 2023-06-07 Red Bank Technologies LLC Band edge emission enhanced organic light emitting diode with a localized emitter
EP3188260B1 (en) * 2015-12-31 2020-02-12 Dow Global Technologies Llc Nanostructure material structures and methods
WO2017150160A1 (ja) * 2016-02-29 2017-09-08 国立大学法人京都大学 熱輻射光源
CN107390421B (zh) * 2017-08-01 2020-11-27 京东方科技集团股份有限公司 一种显示装置及其控制方法
US10892297B2 (en) 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting diode (LED) stack for a display
US10892296B2 (en) * 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting device having commonly connected LED sub-units
KR102518369B1 (ko) 2017-12-19 2023-04-05 삼성전자주식회사 반도체 발광소자
US11552057B2 (en) 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
WO2019212994A1 (en) * 2018-04-30 2019-11-07 Ostendo Technologies, Inc. Quantum photonic imager incorporating color-tunable solid state light emitting micro pixels
DE102023108185A1 (de) * 2023-03-30 2024-10-02 Ams-Osram International Gmbh Optoelektronisches bauelement

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JP3242192B2 (ja) 1993-03-30 2001-12-25 株式会社日立製作所 半導体レーザ素子
JP3323872B2 (ja) * 1993-09-21 2002-09-09 株式会社東芝 レーザー素子
JPH07263752A (ja) * 1994-03-18 1995-10-13 Sony Corp 半導体カラー発光素子
US5784400A (en) * 1995-02-28 1998-07-21 Massachusetts Institute Of Technology Resonant cavities employing two dimensionally periodic dielectric materials
JP2003179315A (ja) * 2001-12-12 2003-06-27 Seiko Epson Corp 光モジュールおよび光通信システム
JP2004006567A (ja) * 2002-03-26 2004-01-08 Japan Science & Technology Corp 点欠陥３次元フォトニック結晶光共振器
US6829281B2 (en) * 2002-06-19 2004-12-07 Finisar Corporation Vertical cavity surface emitting laser using photonic crystals
JP4569942B2 (ja) * 2002-09-26 2010-10-27 三菱電機株式会社 光アクティブデバイス
JP2005157336A (ja) * 2003-11-07 2005-06-16 Canon Inc 光素子の作製方法、３次元積層構造を有する光素子
JP4642527B2 (ja) * 2004-04-12 2011-03-02 キヤノン株式会社 積層型３次元フォトニック結晶及び発光素子及び画像表示装置

Also Published As

Publication number Publication date
US20050238310A1 (en) 2005-10-27
US20090060410A1 (en) 2009-03-05
JP2005328040A (ja) 2005-11-24
US7462873B2 (en) 2008-12-09
EP1587186A3 (en) 2005-11-30
EP1587186B1 (en) 2008-07-23
JP4642527B2 (ja) 2011-03-02
EP1587186A2 (en) 2005-10-19

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