DE602004031593D1 - Herstellungsverfahren einer fotodiodenmatrix - Google Patents

Herstellungsverfahren einer fotodiodenmatrix

Info

Publication number
DE602004031593D1
DE602004031593D1 DE602004031593T DE602004031593T DE602004031593D1 DE 602004031593 D1 DE602004031593 D1 DE 602004031593D1 DE 602004031593 T DE602004031593 T DE 602004031593T DE 602004031593 T DE602004031593 T DE 602004031593T DE 602004031593 D1 DE602004031593 D1 DE 602004031593D1
Authority
DE
Germany
Prior art keywords
manufacturing
photodiode matrix
photodiode
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004031593T
Other languages
English (en)
Inventor
Katsumi Shibayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of DE602004031593D1 publication Critical patent/DE602004031593D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
DE602004031593T 2003-03-27 2004-03-25 Herstellungsverfahren einer fotodiodenmatrix Expired - Lifetime DE602004031593D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003087894A JP4220819B2 (ja) 2003-03-27 2003-03-27 放射線検出器
PCT/JP2004/004212 WO2004086505A1 (ja) 2003-03-27 2004-03-25 ホトダイオードアレイ及びその製造方法、並びに放射線検出器

Publications (1)

Publication Number Publication Date
DE602004031593D1 true DE602004031593D1 (de) 2011-04-14

Family

ID=33095106

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004031593T Expired - Lifetime DE602004031593D1 (de) 2003-03-27 2004-03-25 Herstellungsverfahren einer fotodiodenmatrix

Country Status (9)

Country Link
US (2) US7663169B2 (de)
EP (1) EP1608022B1 (de)
JP (1) JP4220819B2 (de)
KR (1) KR101047671B1 (de)
CN (1) CN1768430A (de)
DE (1) DE602004031593D1 (de)
IL (1) IL171136A (de)
TW (1) TWI327780B (de)
WO (1) WO2004086505A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4220819B2 (ja) * 2003-03-27 2009-02-04 浜松ホトニクス株式会社 放射線検出器
JP5394791B2 (ja) * 2009-03-27 2014-01-22 浜松ホトニクス株式会社 裏面入射型固体撮像素子
JP5152099B2 (ja) * 2009-05-18 2013-02-27 富士通株式会社 基板構造
IN2012DN00642A (de) * 2009-07-17 2015-08-21 Mitsui Chemicals Inc
JP2012151200A (ja) * 2011-01-18 2012-08-09 Nikon Corp 裏面照射型固体撮像素子及びその製造方法、並びに固体撮像装置
US8871608B2 (en) * 2012-02-08 2014-10-28 Gtat Corporation Method for fabricating backside-illuminated sensors
JP2015057589A (ja) * 2013-08-16 2015-03-26 富士フイルム株式会社 放射線画像検出装置の製造方法
KR102363563B1 (ko) * 2016-03-03 2022-02-17 하마마츠 포토닉스 가부시키가이샤 반도체 광검출 소자
US10686158B2 (en) * 2017-03-31 2020-06-16 Innolux Corporation Display device
KR102093317B1 (ko) * 2018-08-13 2020-03-25 주식회사 이와이엘 무기섬광체를 이용한 난수생성방법 및 난수생성장치

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3748546A (en) * 1969-05-12 1973-07-24 Signetics Corp Photosensitive device and array
JP3099202B2 (ja) 1991-08-23 2000-10-16 エア・ウォーター株式会社 可撓性軽量太陽電池モジュールの製造方法
JP2995960B2 (ja) * 1991-10-25 1999-12-27 日本電気株式会社 赤外線ｃｃｄ
JPH0618670A (ja) * 1992-06-30 1994-01-28 Hitachi Medical Corp 放射線検出器
JPH07333348A (ja) 1994-06-03 1995-12-22 Toshiba Corp 放射線検出器およびこれを用いたｘ線ｃｔ装置
JPH08213647A (ja) * 1995-12-07 1996-08-20 Matsushita Electron Corp 光半導体装置
US6926952B1 (en) 1998-01-13 2005-08-09 3M Innovative Properties Company Anti-reflective polymer constructions and method for producing same
US7034306B2 (en) * 1998-06-18 2006-04-25 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor
JP4397989B2 (ja) * 1998-12-28 2010-01-13 浜松ホトニクス株式会社 半導体エネルギー検出器
WO2001051950A1 (fr) * 2000-01-11 2001-07-19 Hamamatsu Photonics K.K. Capteur d'image rayons x
JP4471522B2 (ja) * 2000-03-15 2010-06-02 浜松ホトニクス株式会社 集光部品並びにこれを用いた光源モジュール、レーザー装置及び光信号増幅装置
AU2001244586A1 (en) 2000-04-04 2001-10-15 Hamamatsu Photonics K.K. Semiconductor energy detector
JP4571267B2 (ja) * 2000-04-04 2010-10-27 浜松ホトニクス株式会社 放射線検出器
DE10037103A1 (de) * 2000-07-27 2002-02-14 Aeg Infrarot Module Gmbh Multispektrale Photodiode
JP4574006B2 (ja) * 2000-12-26 2010-11-04 キヤノン株式会社 画像形成装置
US6847041B2 (en) 2001-02-09 2005-01-25 Canon Kabushiki Kaisha Scintillator panel, radiation detector and manufacture methods thereof
JP2002372763A (ja) * 2001-04-10 2002-12-26 Mitsubishi Electric Corp 赤外線カメラ用光学窓およびそれを用いた赤外線カメラ並びに赤外線カメラ用光学窓の製造方法
JP2003066150A (ja) * 2001-08-30 2003-03-05 Canon Inc 蛍光板、放射線検出装置および放射線検出システム
JP4482253B2 (ja) 2001-09-12 2010-06-16 浜松ホトニクス株式会社 ホトダイオードアレイ、固体撮像装置、及び、放射線検出器
WO2004019411A1 (ja) * 2002-08-09 2004-03-04 Hamamatsu Photonics K.K. フォトダイオードアレイ、その製造方法、及び放射線検出器
JP2004241653A (ja) * 2003-02-06 2004-08-26 Hamamatsu Photonics Kk Ｘ線撮像素子
US6907101B2 (en) * 2003-03-03 2005-06-14 General Electric Company CT detector with integrated air gap
JP4220819B2 (ja) * 2003-03-27 2009-02-04 浜松ホトニクス株式会社 放射線検出器
US7019304B2 (en) * 2003-10-06 2006-03-28 General Electric Company Solid-state radiation imager with back-side irradiation

Also Published As

Publication number Publication date
KR101047671B1 (ko) 2011-07-08
JP4220819B2 (ja) 2009-02-04
JP2004296836A (ja) 2004-10-21
IL171136A (en) 2012-08-30
CN1768430A (zh) 2006-05-03
EP1608022A1 (de) 2005-12-21
TW200501441A (en) 2005-01-01
EP1608022A4 (de) 2007-05-09
EP1608022B1 (de) 2011-03-02
US20070040192A1 (en) 2007-02-22
KR20060003335A (ko) 2006-01-10
US7663169B2 (en) 2010-02-16
WO2004086505A1 (ja) 2004-10-07
US20090302410A1 (en) 2009-12-10
TWI327780B (en) 2010-07-21

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