DE602004027166D1 - Transparenter leitfähiger film und transparentes leitfähiges basismaterial damit - Google Patents

Transparenter leitfähiger film und transparentes leitfähiges basismaterial damit

Info

Publication number
DE602004027166D1
DE602004027166D1 DE602004027166T DE602004027166T DE602004027166D1 DE 602004027166 D1 DE602004027166 D1 DE 602004027166D1 DE 602004027166 T DE602004027166 T DE 602004027166T DE 602004027166 T DE602004027166 T DE 602004027166T DE 602004027166 D1 DE602004027166 D1 DE 602004027166D1
Authority
DE
Germany
Prior art keywords
transparent conductive
base material
material therefor
conductive film
conductive base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004027166T
Other languages
English (en)
Inventor
Tokuyuki Nakayama
Yoshiyuki Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Publication of DE602004027166D1 publication Critical patent/DE602004027166D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
DE602004027166T 2004-02-27 2004-12-28 Transparenter leitfähiger film und transparentes leitfähiges basismaterial damit Active DE602004027166D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004054816 2004-02-27
JP2004363269 2004-12-15
PCT/JP2004/019595 WO2005083722A1 (ja) 2004-02-27 2004-12-28 透明導電膜及びそれを用いた透明導電性基材

Publications (1)

Publication Number Publication Date
DE602004027166D1 true DE602004027166D1 (de) 2010-06-24

Family

ID=34914460

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004027166T Active DE602004027166D1 (de) 2004-02-27 2004-12-28 Transparenter leitfähiger film und transparentes leitfähiges basismaterial damit

Country Status (6)

Country Link
US (1) US7563514B2 (de)
EP (1) EP1720175B1 (de)
JP (1) JP4730300B2 (de)
KR (1) KR101081871B1 (de)
DE (1) DE602004027166D1 (de)
WO (1) WO2005083722A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4539181B2 (ja) * 2004-06-07 2010-09-08 住友金属鉱山株式会社 透明導電膜、透明導電膜製造用焼結体ターゲット、透明導電性基材及びそれを用いた表示デバイス
JP4888119B2 (ja) * 2004-09-13 2012-02-29 住友金属鉱山株式会社 透明導電膜及びその製造方法、並びに透明導電性基材、発光デバイス
KR100643376B1 (ko) 2005-10-24 2006-11-10 삼성전자주식회사 표시장치와 표시장치의 제조방법
JP4816116B2 (ja) * 2006-02-08 2011-11-16 住友金属鉱山株式会社 スパッタリングターゲット用酸化物焼結体および、それを用いて得られる酸化物膜、それを含む透明基材
JP4816137B2 (ja) * 2006-02-24 2011-11-16 住友金属鉱山株式会社 透明導電膜及び透明導電性基材
CN101460425B (zh) * 2006-06-08 2012-10-24 住友金属矿山株式会社 氧化物烧结体、靶、用它制得的透明导电膜以及透明导电性基材
JP5127183B2 (ja) * 2006-08-23 2013-01-23 キヤノン株式会社 アモルファス酸化物半導体膜を用いた薄膜トランジスタの製造方法
US9297061B2 (en) * 2007-02-16 2016-03-29 Kaneka Corporation Transparent electroconductive film and process for producing the same
JP5397369B2 (ja) * 2008-03-06 2014-01-22 住友金属鉱山株式会社 半導体発光素子、該半導体発光素子の製造方法および該半導体発光素子を用いたランプ
KR100964231B1 (ko) * 2008-08-29 2010-06-16 삼성모바일디스플레이주식회사 유기 발광 소자 및 유기 발광 표시 장치
US8003164B2 (en) * 2008-09-19 2011-08-23 Guardian Industries Corp. Method of making a scratch-and etch-resistant coated glass article
EP2479151B1 (de) * 2009-09-18 2020-10-28 Nippon Electric Glass Co., Ltd. Verfahren zur herstellung eines glasfilms, verfahren zur verarbeitung eines glasfilms und glasfilmlaminat
US20110070453A1 (en) * 2009-09-21 2011-03-24 Mai Chien-Chin Laminate of transparent conductive film
US10000411B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductivity and low emissivity coating technology
US9862640B2 (en) 2010-01-16 2018-01-09 Cardinal Cg Company Tin oxide overcoat indium tin oxide coatings, coated glazings, and production methods
US10000965B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductive coating technology
US11155493B2 (en) 2010-01-16 2021-10-26 Cardinal Cg Company Alloy oxide overcoat indium tin oxide coatings, coated glazings, and production methods
WO2011088330A2 (en) 2010-01-16 2011-07-21 Cardinal Cg Company High quality emission control coatings, emission control glazings, and production methods
US10060180B2 (en) 2010-01-16 2018-08-28 Cardinal Cg Company Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology
US8293344B2 (en) 2010-02-26 2012-10-23 Guardian Industries Corp. Articles including anticondensation coatings and/or methods of making the same
JP2011192896A (ja) * 2010-03-16 2011-09-29 Fuji Electric Co Ltd 薄膜太陽電池およびその製造方法
TWI658516B (zh) 2011-03-11 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
JP5327282B2 (ja) * 2011-06-24 2013-10-30 住友金属鉱山株式会社 透明導電膜製造用焼結体ターゲット
US9657386B2 (en) * 2014-03-28 2017-05-23 Kaneka Corporation Transparent conductive film and method for producing same
KR101694856B1 (ko) * 2015-03-25 2017-01-11 전자부품연구원 이중층 전도막이 코팅된 전도성 기판 및 그의 제조 방법
US11028012B2 (en) 2018-10-31 2021-06-08 Cardinal Cg Company Low solar heat gain coatings, laminated glass assemblies, and methods of producing same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5407602A (en) * 1993-10-27 1995-04-18 At&T Corp. Transparent conductors comprising gallium-indium-oxide
JPH09259640A (ja) * 1996-03-25 1997-10-03 Uchitsugu Minami 透明導電膜
JP4837811B2 (ja) 1998-04-09 2011-12-14 出光興産株式会社 有機エレクトロルミネッセンス素子
JP2000048966A (ja) * 1998-07-27 2000-02-18 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子
JP4198253B2 (ja) 1999-02-02 2008-12-17 出光興産株式会社 有機エレクトロルミネッセンス素子およびその製造方法
KR100424254B1 (ko) * 1999-08-06 2004-03-22 삼성에스디아이 주식회사 플라즈마 표시 장치용 광학 필터
JP4917725B2 (ja) * 2001-09-26 2012-04-18 東ソー株式会社 透明導電膜およびその製造方法並びにその用途
US20030134122A1 (en) * 2002-01-14 2003-07-17 Paul Wickboldt High conductivity transparent conductor formed using pulsed energy process
JP4260494B2 (ja) * 2002-02-26 2009-04-30 株式会社フジクラ 透明電極用基材の製法、光電変換素子の製法、及び色素増感太陽電池の製法
TWI254080B (en) * 2002-03-27 2006-05-01 Sumitomo Metal Mining Co Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device

Also Published As

Publication number Publication date
KR20060117911A (ko) 2006-11-17
KR101081871B1 (ko) 2011-11-09
EP1720175A1 (de) 2006-11-08
JPWO2005083722A1 (ja) 2008-01-17
EP1720175B1 (de) 2010-05-12
JP4730300B2 (ja) 2011-07-20
WO2005083722A1 (ja) 2005-09-09
US7563514B2 (en) 2009-07-21
EP1720175A4 (de) 2008-05-28
US20070051926A1 (en) 2007-03-08

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